Free grounding film and manufacturing method therefor, and shielding circuit board including free grounding film and grounding method

1. A free grounding film comprising:

at least one conductor layer,

wherein one side of the conductor layer is an adhesive film layer and the other side is a peelable carrier film,

wherein a high-temperature-resistant anti-oxidation layer is set between the conductor layer and the peelable carrier film, and

wherein a material and a thickness range of the high-temperature-resistant anti-oxidation layer comprises one of the following three modes:

a. a thickness of the high-temperature-resistant anti-oxidation layer is valued from 0.01 to 5 μm; the material of the high-temperature-resistant anti-oxidation layer comprises one of metal material, ferrite, graphite, carbon nanotube, graphene and silver paste, the metal material comprises one of these metal elements: aluminum, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold and molybdenum, or an alloy formed by at least two of the metal elements;

b. the high-temperature-resistant anti-oxidation layer is made of an adhesive, and the adhesive comprises at least one of a modified epoxy resin, modified acrylic acid, modified rubber, modified thermoplastic polyimide, and a modified polyurethane resin; and a thickness of the high-temperature-resistant anti-oxidation layer is valued from 0.1 to 2 μm; and

c. the high-temperature-resistant anti-oxidation layer is made of a mixture of an adhesive and a conductive particle, a volume ratio of the conductive particle to the adhesive is valued from 5% to 80%, and a thickness of the high-temperature-resistant anti-oxidation layer is valued from 0.1 to 5 μm.

2. The free grounding film as claimed in claim 1 , wherein a surface of the conductor layer is flat, a total thickness of the conductor layer is valued from 0.01 to 35 μm, and the adhesive film layer is a layer made of a mixture of a conductive particle and an adhesive and having a thickness valued from 0.2 to 20 μm, in the adhesive film layer, a volume ratio of the conductive particle to the adhesive is valued from 2% to 80%, and a particle size of the conductive particle is valued from 0.1 to 15 μm,

or at least on the conductor layer adjacent to the adhesive film layer, a surface of the conductor layer in contact with the adhesive film layer is rough, a roughness is valued from 0.3 to 10 μm, a total thickness of the conductor layer is valued from 0.01 to 35 μm, the adhesive film layer is a layer made of an adhesive and having a thickness valued from 0.2-10 μm, or the adhesive film layer is a layer made of a mixture of an adhesive and a conductive particle and having a thickness of 0.2-20 μm, in the layer made of the mixture of the adhesive and the conductive particle, a volume ratio of the conductive particle to the adhesive is valued from 2% to 80%, and a particle size of the conductive particle is valued from 0.1 to 15 μm.

3. The free grounding film as claimed in claim 1 , wherein a material of the conductor layer comprises at least one of metal material, ferrite, graphite, carbon nanotube and graphene, the metal material comprises at least one of aluminum, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold and molybdenum, or metal material is an alloy formed by at least two of the above listed metal elements; and the adhesive comprises at least one of a modified epoxy resin, modified acrylic acid, modified rubber, modified thermoplastic polyimide, and a modified polyurethane resin.

4. The free grounding film as claimed in claim 1 , wherein the peelable carrier film comprises a peelable metal foil carrier tape or a polyester carrier film having a dispersion and release effect.

5. A shielding circuit board comprising a free grounding film, comprising a printed circuit board having an electromagnetic wave shielding film, and a surface of the electromagnetic wave shielding film is provided with the free grounding film as claimed in claim 1 .

6. A grounding method of the shielding circuit board, wherein an electromagnetic wave shielding film includes a shielding layer and an insulating layer set on the shielding layer, wherein the grounding method comprises one of following three modes for grounding:

a. a surface of the conductor layer is flat, a total thickness of the conductor layer is valued from 0.01 to 35 μm, and the adhesive film layer is a layer made of a mixture of a conductive particle and an adhesive and having a thickness valued from 0.2-20 μm, in the adhesive film layer, a volume ratio of the conductive particle to the adhesive is valued from 2% to 80%, and a particle size of the conductive particle is valued from 0.1 to 15 μm; a grounding mode corresponding to this structure is as follows: conductive particles in the adhesive film layer is agglomerated into a larger conductive particle, and the larger conductive particle is used to pierce the insulating layer of the electromagnetic wave shielding film to connect with the shielding layer;

b. at least on the conductor layer adjacent to the adhesive film layer, a surface of the conductor layer in contact with the adhesive film layer is rough, a roughness is valued from 0.3 to 10 μm, a total thickness of the conductor layer is valued from 0.01 to 35 μm, the adhesive film layer is a layer made of an adhesive and having a thickness valued from 0.2 to 10 μm, and a grounding mode corresponding to this structure is as follows: an insulating layer of the shielding film is pierced by a rough surface of the conductor layer so as to the conductor layer is connected to the shielding layer; or

c. at least on the conductor layer adjacent to the adhesive film layer, a surface of the conductor layer in contact with the adhesive film layer is rough, a roughness is valued from 0.3 to 10 μm, a total thickness of the conductor layer is valued from 0.01 to 35 μm, the adhesive film layer is a layer made of a mixture of an adhesive and a conductive particle and having a thickness valued form 0.2 to 20 μm, in the layer made of the mixture of the adhesive and the conductive particle, a volume ratio of the conductive particle to the adhesive is valued from 2% to 80%, a particle size of the conductive particle is valued from 0.1 to 15 μm, and a grounding mode corresponding to this structure is as follows: conductive particles in the adhesive film layer is agglomerated into a large particle conductive particle, and the large particle conductive particle cooperates with a rough surface of the conductor layer to pierce the insulating layer of the shielding film to connect with the shielding layer.

7. A manufacturing method for the free grounding film, wherein manufacturing steps are as follows:

a. a conductive high-temperature-resistant anti-oxidation layer is formed on one side of a peelable metal foil carrier tape;

b. at least one conductor layer is formed on the other side of the high-temperature-resistant anti-oxidation layer; and

c. an adhesive film layer is formed on the conductor layer.

8. A manufacturing method for the free grounding film, wherein manufacturing steps are as follows:

a. a resin-based high-temperature oxidation-resistant layer is formed on one side of the polyester carrier film having a dispersion and release;

b. at least one conductor layer is formed on the other side of the high-temperature-resistant anti-oxidation layer; and

c. an adhesive film layer is formed on the conductor layer,

wherein one side of the conductor layer is an adhesive film layer and the other side is a peelable carrier film,

wherein a high-temperature-resistant anti-oxidation layer is set between the conductor layer and the peelable carrier film, wherein a material and a thickness range of the high-temperature-resistant anti-oxidation layer comprises one of the following three modes:

a. a thickness of the high-temperature-resistant anti-oxidation layer is valued from 0.01 to 5 μm; the material of the high-temperature-resistant anti-oxidation layer comprises one of metal material, ferrite, graphite, carbon nanotube, graphene and silver paste, the metal material comprises one of these metal elements: aluminum, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold and molybdenum, or an alloy formed by at least two of the metal elements;

b. the high-temperature-resistant anti-oxidation layer is made of an adhesive, and the adhesive comprises at least one of a modified epoxy resin, modified acrylic acid, modified rubber, modified thermoplastic polyimide, and a modified polyurethane resin; and a thickness of the high-temperature-resistant anti-oxidation layer is valued from 0.1 to 2 μm; and

c. the high-temperature-resistant anti-oxidation layer is made of a mixture of an adhesive and a conductive particle, a volume ratio of the conductive particle to the adhesive is valued from 5% to 80%, and a thickness of the high-temperature-resistant anti-oxidation layer is valued from 0.1 to 5 μm.