Photolithography alignment mark structures and semiconductor structures
A method is provided for fabricating a photolithography alignment mark structure. The method includes providing a substrate; forming a first grating, a second grating, a third grating and a fourth grating in the substrate; forming a photoresist layer on a surface of the substrate; obtaining a first alignment center along a first direction and a second alignment center alone a second direction based on the first grating and the fourth grating, respectively; providing a mask plate having a fifth grating pattern and a sixth grating pattern; aligning the mask plate with the substrate by using the first alignment center as an alignment center along the first direction and the second alignment center as an alignment center along the second direction; reproducing the fifth grating pattern and the sixth grating pattern in the photoresist layer; and forming a fifth grating and a sixth grating on the substrate by removing a portion of photoresist layer.
1. A photolithography alignment mark structure, comprising:
a substrate;
a first grating, a second grating, a third grating, and a fourth grating formed in the substrate;
a fifth grating and a sixth grating formed on a surface of the substrate, wherein:
the first grating, the second grating, and the third grating formed in the substrate are along a first direction;
the fourth grating formed in the substrate is along a second direction;
the first direction and the second direction are perpendicular to each other;
the fifth grating and the sixth grating formed are along the first direction;
the grating constant of the first grating is smaller than the grating constant of the second grating; and
the second grating, the third grating, the fifth grating, and the sixth grating have a same grating constant, wherein
a pattern of the second grating is aligned with a pattern of the fifth grating and a pattern of the third grating is aligned with a pattern of the sixth grating, and
reticles of the second grating are interlaced with reticles of the fifth grating and the fifth grating has an offset of a first distance along the first direction with respect to the second grating.
2. The photolithography alignment mark structure according to claim 1 , wherein:
the first grating, the second grating, the third grating, and the fourth grating are all scribe grooves.
3. The photolithography alignment mark structure according to claim 1 , wherein the second grating and the third grating are parallel to each other along the first direction and a distance between the second grating and the third grating is not greater than 100 μm.
4. The photolithography alignment mark structure according to claim 1 , wherein:
the first grating, the second grating, the third grating, the fourth grating, the fifth grating, and the sixth grating together are used as the photolithography alignment mark structure.
5. The photolithography alignment mark structure according to claim 1 , wherein:
the substrate is made of a semiconductor material including silicon, germanium, silicon germanium, silicon on insulator (SIO), germanium on insulator (GOI), or a combination thereof.
6. The photolithography alignment mark structure according to claim 1 , wherein:
the first distance is in a range of 1 nm˜10 nm.
7. The photolithography alignment mark structure according to claim 1 , wherein:
the pattern of the second grating is aligned with the pattern of the fifth grating along a direction perpendicular to a top surface of a photoresist layer, and
the pattern of the third grating is aligned with the pattern of the sixth grating along a direction perpendicular to the top surface of the photoresist layer.
8. A photolithography alignment mark structure, comprising:
a substrate;
a first grating, a second grating, a third grating, and a fourth grating formed in the substrate;
a fifth grating and a sixth grating formed on a surface of the substrate, wherein:
the first grating, the second grating, and the third grating formed in the substrate are along a first direction;
the fourth grating formed in the substrate is along a second direction;
the first direction and the second direction are perpendicular to each other;
the fifth grating and the sixth grating formed are along the first direction;
the grating constant of the first grating is smaller than the grating constant of the second grating; and
the second grating, the third grating, the fifth grating, and the sixth grating have a same grating constant, wherein
reticles of the second grating are interlaced with reticles of the fifth grating and the fifth grating has an offset of a first distance along the first direction with respect to the second grating
reticles of the third grating are interlaced with reticles of the sixth grating and the sixth grating has an offset of a first distance along a reverse direction of the first direction with respect to the second grating; and
the fifth grating with respect to the second grating and the sixth grating with respect to the third grating have an overlay shift along the first direction.
9. The photolithography alignment mark structure according to claim 8 , wherein:
the first grating, the second grating, the third grating, and the fourth grating are all scribe grooves.
10. The photolithography alignment mark structure according to claim 8 , wherein the second grating and the third grating are parallel to each other along the first direction and a distance between the second grating and the third grating is not greater than 100 μm.
11. The photolithography alignment mark structure according to claim 8 , wherein:
the first grating, the second grating, the third grating, the fourth grating, the fifth grating, and the sixth grating together are used as the photolithography alignment mark structure.
12. The photolithography alignment mark structure according to claim 8 , wherein:
the substrate is made of a semiconductor material including silicon, germanium, silicon germanium, silicon on insulator (SIO), germanium on insulator (GOI), or a combination thereof.
13. The photolithography alignment mark structure according to claim 8 , wherein:
the first distance is in a range of 1 nm˜10 nm.
14. The photolithography alignment mark structure according to claim 8 , wherein the alignment mark structure also includes:
a seventh grating and an eighth grating formed in the substrate along the second direction, wherein the seventh grating and the eighth grating are both scribe grooves; and
a ninth grating and a tenth grating formed on the substrate along the second direction,
wherein the grating constant of the fourth grating is smaller than the grating constant of the seventh grating; and the seventh grating, the eighth grating, the ninth grating pattern, and the tenth grating have a same grating constant.
15. The photolithography alignment mark structure according to claim 14 , wherein:
reticles of the seventh grating are interlaced with reticles of the ninth grating and the ninth grating has an offset of the second distance along the second direction with respect to the seventh grating;
reticles of the eighth grating are interlaced with reticles of the tenth grating and the tenth grating has an offset of the second distance along a reverse direction of the second direction with respect to the eighth grating; and
the ninth grating with respect to the seventh grating and the tenth grating with respect to the eighth grating have an overlay shift along the second direction.