Semiconductor structure and method for manufacturing the same
A semiconductor structure is disclosed. The semiconductor structure includes: a semiconductor substrate including a front surface and a back surface; a backside metallization layer formed over the semiconductor substrate, the backside metallization layer being closer to the back surface than to the front surface of the semiconductor substrate, at least a portion of the backside metallization layer forming an inductor structure; and an electrically non-conductive material formed in the semiconductor substrate, the electrically non-conductive material at least partially overlapping the inductor structure from a top view, and the electrically non-conductive material including a top surface, a bottom surface, and sidewalls, the top surface being adjacent to the back surface of the semiconductor substrate. A method for manufacturing a semiconductor structure is also disclosed.
1. A semiconductor structure, comprising:
a semiconductor substrate including a front surface and a back surface;
a backside metallization layer formed over the semiconductor substrate, the backside metallization layer being closer to the back surface than to the front surface of the semiconductor substrate, and at least a portion of the backside metallization layer forming an inductor structure;
an electrically non-conductive material formed in the semiconductor substrate, the electrically non-conductive material at least partially overlapping the inductor structure from a top view, and the electrically non-conductive material including a top surface, a bottom surface, and sidewalls, the top surface being adjacent to the back surface of the semiconductor substrate; and
a front-end-of-line (FEOL) layer formed over the semiconductor substrate, the FEOL layer being closer to the front surface than to the back surface of the semiconductor substrate.
2. The semiconductor structure of claim 1 , wherein the bottom surface of the electrically non-conductive material is parallel to the front surface of the semiconductor substrate.
3. The semiconductor structure of claim 2 , wherein the bottom surface of the electrically non-conductive material formed is adjacent to the front surface of the semiconductor substrate.
4. The semiconductor structure of claim 1 , further comprising a front side metallization layer formed over the semiconductor substrate, the front side metallization layer being closer to the front surface than to the back surface of the semiconductor substrate.
5. The semiconductor structure of claim 4 , further comprising a semiconductor integrated chip bonded to the front side metallization layer in a face-to-face configuration.
6. The semiconductor structure of claim 5 , wherein a bonding between the semiconductor integrated chip and the front side metallization layer includes hybrid bonding.
7. The semiconductor structure of claim 1 , wherein the electrically non-conductive material fully covers the inductor structure from the top view.
8. The semiconductor structure of claim 1 , wherein a center of the inductor structure is aligned with a center of the electrically non-conductive material from the top view.
9. A semiconductor structure, comprising:
a semiconductor substrate including a front surface and a back surface;
an inductor structure disposed over the semiconductor substrate, the inductor structure being closer to the back surface than to the front surface of the semiconductor substrate;
a cavity formed in the semiconductor substrate, the cavity at least partially overlapping the inductor structure from a top view, and the cavity including a top surface, a bottom surface, and sidewalls, the top surface being adjacent to the back surface of the semiconductor substrate; and
a front-end-of-line (FEOL) layer formed over the semiconductor substrate, the FEOL layer being closer to the front surface than to the back surface of the semiconductor substrate.
10. The semiconductor structure of claim 9 , wherein the bottom surface of the cavity is parallel to the front surface of the semiconductor substrate.
11. The semiconductor structure of claim 9 , wherein the cavity does not extend to the front surface of the semiconductor substrate.
12. The semiconductor structure of claim 9 , wherein the bottom surface of the cavity is adjacent to the front surface of the semiconductor substrate.
13. The semiconductor structure of claim 9 , further comprising a recess leading to the cavity, and the cavity being exposed through the recess.
14. The semiconductor structure of claim 13 , wherein the inductor structure is spirally patterned with a gap, and the recess aligns with the gap.
15. The semiconductor structure of claim 13 , wherein the inductor structure is not exposed through the recess.
16. The semiconductor structure of claim 9 , wherein the cavity fully covers the inductor structure from the top view.
17. The semiconductor structure of claim 9 , further comprising a front side metallization layer formed over the semiconductor substrate, the front side metallization layer being closer to the front surface than to the back surface of the semiconductor substrate.
18. The semiconductor structure of claim 17 , wherein the front side metallization layer includes an area free from conductive material, and the area fully covers the cavity from the top view.
19. A semiconductor structure, comprising:
a semiconductor substrate, including:
a front surface;
a back surface; and
an electrically non-conductive region passing through the semiconductor substrate from the front surface to the back surface;
a first metallization layer formed at the back surface of the semiconductor substrate, the first metallization layer including an inductor structure overlaps the electrically non-conductive region from a top view;
a contact via passing through the semiconductor substrate, wherein the inductor structure is coupled to the contact via; and
a front-end-of-line (FEOL) layer formed over the semiconductor substrate, the FEOL layer being closer to the front surface than to the back surface of the semiconductor substrate.
20. The semiconductor structure of claim 19 , further comprising a second metallization layer formed at the front surface of the semiconductor substrate, and the inductor structure is coupled to the second metallization layer through the contact via.