IP Library › Granted Patent US 10,164,203
Granted Patent B2
US 10,164,203 · App. 15/910,374 · Granted Dec 25, 2018

Light-emitting element, light-emitting device, electronic device, and lighting device

Inventors: Satoshi Seo (Kanagawa, JP); Toshiki Sasaki (Kanagawa, JP); Ryohei Yamaoka (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5016H01L27/323H01L27/3244H01L51/0078H01L51/0081H01L51/0085H01L51/0087H01L51/0089H01L51/5036H01L51/5218H01L51/56
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Quick Facts
Patent No.
US 10,164,203
App. No.
15/910,374
Granted
Dec 25, 2018
Kind
B2
Abstract

A novel light-emitting element is provided. A light-emitting element that emits red light with high color purity and has high emission efficiency is provided. A full-color light-emitting device having low power consumption is provided. In the light-emitting element that exhibits white light emission, the emission wavelength range of red light is a specific range on the longer wavelength side than the conventional emission wavelength range of red light that is usually used, and an optical element having a specific transmittance in the specific wavelength range is used.

Claims (58)

1. A light-emitting element comprising an EL layer between a first electrode and a second electrode,

wherein the EL layer is capable of emitting white light,

wherein a light-emitting substance in the EL layer is an organometallic iridium complex,

wherein a color filter having a transmittance of 40% or less of light with a wavelength of 600 nm and a transmittance of 40% or more of light with a wavelength of 630 nm is provided on a second electrode side of the light-emitting element, and

wherein emission of light whose emission spectrum has a half width of greater than or equal to 5 nm and less than or equal to 120 nm and a peak at greater than or equal to 620 nm and less than or equal to 680 nm is obtained from the light-emitting element.

2. The light-emitting element according to claim 1 ,

wherein a transparent conductive layer is provided between the first electrode and the EL layer, and

wherein an optical path length between the transparent conductive layer and the second electrode is set such that red light emission obtained from the EL layer is relatively intensified.

3. The light-emitting element according to claim 1 ,

wherein the first electrode is reflective, and

wherein the second electrode is semi-transmissive and semi-reflective.

4. A light-emitting device comprising:

the light-emitting element according to claim 1 ; and

a transistor,

wherein the transistor comprises an oxide semiconductor in a channel formation region.

5. An electronic device comprising:

the light-emitting device according to claim 4 ; and

an operation key, a speaker, a microphone, or an external connection portion.

6. A lighting device comprising:

the light-emitting device according to claim 4 ; and

a housing.

7. A light-emitting device comprising:

the light-emitting element according to claim 1 ; and

an FPC.

8. A light-emitting element comprising a plurality of EL layers between a first electrode and a second electrode,

wherein the EL layer is capable of emitting white light,

wherein a color filter having a transmittance of 40% or less of light with a wavelength of 600 nm and a transmittance of 40% or more of light with a wavelength of 630 nm is provided on a second electrode side of the light-emitting element, and

wherein emission of light whose emission spectrum has a half width of greater than or equal to 5 nm and less than or equal to 120 nm and a peak at greater than or equal to 620 nm and less than or equal to 680 nm is obtained from the light-emitting element.

9. The light-emitting element according to claim 8 ,

wherein a transparent conductive layer is provided between the first electrode and the EL layers, and

wherein an optical path length between the transparent conductive layer and the second electrode is set such that red light emission obtained from the EL layers is relatively intensified.

10. The light-emitting element according to claim 8 ,

wherein a charge generation layer is provided between the EL layers.

11. The light-emitting element according to claim 8 ,

wherein the first electrode is reflective, and

wherein the second electrode is semi-transmissive and semi-reflective.

12. A light-emitting device comprising:

the light-emitting element according to claim 8 ; and

an FPC.

13. An electronic device comprising:

the light-emitting device according to claim 12 ; and

an operation key, a speaker, a microphone, or an external connection portion.

14. A lighting device comprising:

the light-emitting device according to claim 12 ; and

a housing.

15. A light-emitting device comprising:

a light-emitting element on a single crystal substrate,

wherein the light-emitting element comprises an EL layer between a first electrode and a second electrode,

wherein the EL layer is capable of emitting white light,

wherein a color filter having a transmittance of 40% or less of light with a wavelength of 600 nm and a transmittance of 40% or more of light with a wavelength of 630 nm is provided on a second electrode side of the light-emitting element, and

wherein emission of light whose emission spectrum has a half width of greater than or equal to 5 nm and less than or equal to 120 nm and a peak at greater than or equal to 620 nm and less than or equal to 680 nm is obtained from the light-emitting element.

16. The light-emitting device according to claim 15 ,

wherein the first electrode is reflective, and

wherein the second electrode is semi-transmissive and semi-reflective.

17. The light-emitting device according to claim 15 , further comprising:

an FPC.

18. An electronic device comprising:

the light-emitting device according to claim 15 ; and a housing.

Priority Claims (1)
JP 2016-096369 · May 12, 2016 · national
Continuity (2)
Continuation 15590280 · May 9, 2017
Related Publication 20180248146A1 · Aug 30, 2018
Cited By (1)
US 12,302,688