Imaging apparatus and control method for solid-state image sensor
The present invention concerns an imaging apparatus having a plurality of pixels, each of the pixels including: a first photoelectric converter; a first pixel memory; a first transfer unit configured to transfer charges from the first photoelectric converter to the first pixel memory; a second photoelectric converter; a second pixel memory; a second transfer unit configured to transfer charges from the second photoelectric converter to the second pixel memory; and a switch adapted to control an electric connection state between the first pixel memory and the second pixel memory, wherein the exposure time of the first photoelectric converter is longer than the exposure time of the second photoelectric converter.
1. An imaging apparatus comprising a plurality of pixels, each of the pixels including:
a first photoelectric converter;
a first pixel memory;
a first transfer unit configured to transfer charges from the first photoelectric converter to the first pixel memory;
a second photoelectric converter;
a second pixel memory;
a second transfer unit configured to transfer charges from the second photoelectric converter to the second pixel memory;
a micro-lens that overlaps with the first and second photoelectric converters when viewed from an optical axis direction of the micro-lens; and
a switch adapted to control an electric connection state between the first pixel memory and the second pixel memory,
wherein an exposure time of the first photoelectric converter is longer than an exposure time of the second photoelectric converter,
wherein in each pixel, the micro-lens collects incident light to the first photoelectric converter and the second photoelectric converter, and
wherein in each pixel disposed in a center region, an optical axis of the micro-lens is located closer to the second photoelectric converter than to the first photoelectric converter.
2. The imaging apparatus according to claim 1 , wherein a sensitivity of the first photoelectric converter is lower than a sensitivity of the second photoelectric converter.
3. The imaging apparatus according to claim 1 , wherein each of the pixels includes either (i) a first reset unit connected to the first pixel memory and adapted to reset the charges stored in the first pixel memory or (ii) a second reset unit connected to the second pixel memory and adapted to reset the charges stored in the second pixel memory.
4. The imaging apparatus according to claim 1 , further comprising a scanning circuit for reading a pixel signal acquired by the first photoelectric converter or the second photoelectric converter in the plurality of pixels,
wherein the switch controls the connection state using a signal from the scanning circuit.
5. The imaging apparatus according to claim 1 , wherein when a second pixel signal, based on the charges stored in the second photoelectric converter, is acquired:
the charges are transferred from the second photoelectric converter to the second pixel memory, and an amount of the charges stored in the second pixel memory is converted into a voltage signal and read, and then
the first pixel memory and the second pixel memory are electrically connected by controlling the switch, and an amount of the charges held in the first pixel memory and the second pixel memory is converted into a voltage signal and read.
6. The imaging apparatus according to claim 1 , further comprising a controller configured to control the plurality of pixels,
wherein the controller controls the plurality of pixels so that the exposure time of the first photoelectric converter is longer than the exposure time of the second photoelectric converter.
7. The imaging apparatus according to claim 1 , wherein an aperture area of the first photoelectric converter is larger than an aperture area of the second photoelectric converter.
8. The imaging apparatus according to claim 1 , wherein when a first pixel signal, based on the charges stored in the first photoelectric converter, is acquired:
the charges are transferred from the first photoelectric converter to the first pixel memory, and an amount of the charges stored in the first pixel memory is converted into a voltage signal and read, and then
the first pixel memory and the second pixel memory are electrically connected by controlling the switch, and an amount of the charges held in the first pixel memory and the second pixel memory is converted into a voltage signal and read.
9. The imaging apparatus according to claim 8 , wherein a concentration of impurities implanted into a region of the first pixel memory is half or more and two times or less of a concentration of impurities implanted into a region of the second pixel memory.
10. The imaging apparatus according to claim 1 , wherein in first pixels which are a part of the plurality of pixels, when a first pixel signal, based on the charges stored in the first photoelectric converter, is acquired:
the charges are transferred from the first photoelectric converter to the first pixel memory, and then
by controlling the switch, the charges are transferred from the first pixel memory to the second pixel memory, and an amount of the charges held in the second pixel memory is converted into a voltage signal and read, and
in second pixels, which are pixels other than the first pixels in the plurality of pixels, when the first pixel signal is acquired:
charges are transferred from the first photoelectric converter to the first pixel memory, and then
an amount of the charges held in the first pixel memory is converted into a voltage signal and read.
11. The imaging apparatus according to claim 10 , wherein in the first pixels, when the second pixel signal, based on the charges stored in the second photoelectric converter, is acquired, the charges are transferred from the second photoelectric converter to the second pixel memory, and then a signal, based on the charges held in the second pixel memory, is read, and
in the second pixels, when the second pixel signal is acquired, the charges are transferred from the second photoelectric converter to the second pixel memory, then, by controlling the switch, the charges are transferred from the second pixel memory to the first pixel memory, and a signal, based on the charges held in the first pixel memory, is read.
12. The imaging apparatus according to claim 1 , wherein when a second pixel signal, based on the charges stored in the second photoelectric converter, is acquired:
the charges are transferred from the second photoelectric converter to the second pixel memory, and then
by controlling the switch, the charges are transferred from the second pixel memory to the first pixel memory, and an amount of the charges held in the first pixel memory is converted into a voltage signal and read.
13. The imaging apparatus according to claim 12 , wherein the pixels each have only one converter to convert an amount of the charges held in the pixel memory into a voltage signal, and the converter is connected to the first pixel memory.
14. The imaging apparatus according to claim 12 , wherein when the second pixel signal is acquired, a duration of a time for holding the charges in the second pixel memory is different for each row in a pixel region having the plurality of pixels.
15. The imaging apparatus according to claim 14 , wherein an exposure start time and an exposure end time of the second photoelectric converter are simultaneous for pixels disposed in different rows.
16. An imaging apparatus comprising a plurality of pixels, each of the pixels including:
a first photoelectric converter;
a first pixel memory;
a first transfer unit configured to transfer charges from the first photoelectric converter to the first pixel memory;
a second photoelectric converter;
a second pixel memory;
a second transfer unit configured to transfer charges from the second photoelectric converter to the second pixel memory;
a micro-lens that overlaps with the first and second photoelectric converters when viewed from an optical axis direction of the micro-lens; and
a switch adapted to control an electric connection state between the first pixel memory and the second pixel memory,
wherein an exposure time of the first photoelectric converter is longer than an exposure time of the second photoelectric converter,
wherein the pixels each include a wave guide for collecting the incident light to the first photoelectric converter and the second photoelectric converter, and
wherein in each pixel disposed in a center region, a center of an emission end of a core of the wave guide is located closer to the second photoelectric converter than to the first photoelectric converter.
17. The imaging apparatus according to claim 16 , wherein a sensitivity of the first photoelectric converter is lower than a sensitivity of the second photoelectric converter.
18. The imaging apparatus according to claim 16 , wherein each of the pixels includes either (i) a first reset unit connected to the first pixel memory and adapted to reset the charges stored in the first pixel memory or (ii) a second reset unit connected to the second pixel memory and adapted to reset the charges stored in the second pixel memory.
19. The imaging apparatus according to claim 16 , further comprising a scanning circuit for reading a pixel signal acquired by the first photoelectric converter or the second photoelectric converter in the plurality of pixels,
wherein the switch controls the connection state using a signal from the scanning circuit.
20. The imaging apparatus according to claim 16 , further comprising a controller configured to control the plurality of pixels,
wherein the controller controls the plurality of pixels so that the exposure time of the first photoelectric converter is longer than the exposure time of the second photoelectric converter.