Doping-induced carrier density modulation in polymer field-effect transistors
A method of fabricating an organic field effect transistor (OFET), including forming a source contact, a drain contact, and a gate connection to a channel comprising semiconducting polymers, wherein the gate connection applies a field to the semiconductor polymers across a dielectric layer to modulate conduction along the semiconducting polymers between the source contact and the drain contact; and treating the semiconducting polymers, wherein the treating includes a chemical treatment that controls a carrier density, carrier mobility, threshold voltage, and/or contact resistance of the OFET.
1. A method of fabricating an organic field effect transistor (OFET), comprising:
forming a source contact and a drain contact to a channel comprising semiconducting polymers;
providing a dielectric between the semiconducting polymers and a gate;
doping the semiconducting polymers that interface with the source contact;
doping the semiconducting polymers that interface with the drain contact; and
wherein the doping of the semiconducting polymers that interface with the source contact and the doping of the semiconducting polymers that interface with the drain contact dopes the semiconducting polymers with one or more doping concentrations that:
increase linearity of the OFET's current-voltage (IV) curve, for voltages applied between the source contact and the drain contact in a range of 0 and +/−5 V, and
do not change the channel's resistance, defined as Rs/W, to within 4% as compared to before the doping, where Rs is the channel's series resistance and W is the channel's width.
2. The method of claim 1 , further comprising charge compensating the semiconducting polymers.
3. The method of claim 1 , wherein the doping concentrations are such that 1% or less than 1% of monomers in the semiconducting polymers are doped.
4. The method of claim 1 , wherein the doping concentrations are such that:
the OFET has a threshold voltage within +/−2 Volts of 0 Volts,
the OFET's on/off ratio remains the same or is increased as compared to without the doping,
the OFET's off current remains the same or is decreased as compared to without the doping, and
the OFET's contact resistance is reduced by at least a factor of two as compared to without the doping.
5. The method of claim 1 , wherein the doping concentrations are characterized by an increase in absorption of the channel, at a wavelength in a range of 800 nm-1100 nm, of less than 0.5% as compared to without the doping.
6. The method of claim 1 , wherein the doping increases the channel's carrier mobility to at least 58.6 cm 2 V −1 s −1 in a saturation regime and at least 18.1 cm 2 V −1 s −1 in a linear regime.
7. The method of claim 1 , further comprising annealing the semiconductor polymers, wherein the annealing is such that hysteresis of the OFET's transfer curve is reduced and the channel's mobility is increased, while the OFET's threshold voltage is not changed to within 1%.
8. The method of claim 1 , wherein:
the doping of the semiconducting polymers that interface with the source contact comprises oxidizing the semiconducting polymers that interface with the source contact, and
the doping of the semiconducting polymers that interface with the drain compact comprises oxidizing the semiconducting polymers that interface with the drain contact.
9. The method of claim 1 , wherein doping comprises exposing the OFET to I 2 vapor and further comprising annealing the OFET after the exposing.
10. The method of claim 1 , further comprising treating the semiconducting polymers that interface with the source contact and the semiconducting polymers that interface with the drain contact, wherein the treating is with an amine.
11. The method of claim 1 , further comprising treating the semiconducting polymers that interface with the source contact and the semiconducting polymers that interface with the drain contact, wherein the treating is with NH 4 OH.
12. The method of claim 1 , further comprising treating the semiconducting polymers that interface with the source contact and the semiconducting polymers that interface with the drain contact, wherein the treating is with RNH 2 , where R is hydrogen or an organic compound.
13. The method of claim 1 , wherein semiconducting polymer comprises a regioregular conjugated main chain section, said regioregular conjugated main chain section having a repeat unit that comprises the structure:
wherein Ar is a substituted or non-substituted aromatic functional group, or Ar is nothing and the valence of the pyridine ring is completed with hydrogen or the valence of the fluorobenzene ring is completed with hydrogen.
14. The method of claim 13 , wherein:
the pyridine unit comprises:
or
the fluorinated unit comprises:
15. The method of claim 14 , wherein the repeat unit further comprises a dithiophene of the structure:
wherein each Ar is independently a substituted or non-substituted aromatic functional group, or each Ar is independently nothing and the valence of its respective thiophene ring is completed with hydrogen,
each R is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain; and
X is C, Si, Ge, N or P.
16. The method of claim 1 , wherein the semiconducting polymers comprise PCDTFBT.
17. An organic field effect transistor (OFET), comprising:
a channel comprising semiconducting polymers, the semiconducting polymers comprising one or more doped semiconducting polymers having one or more doping concentrations;
a source contact to one or more of the doped semiconducting polymers;
a drain contact to one or more of the doped semiconducting polymers; and
a dielectric between the channel and a gate; and
wherein the doping concentrations:
increase linearity of the OFET's current-voltage (IV) curve, for voltages applied between the source contact and the drain contact in a range of 0 and +/−5 V, and
do not change the channel's resistance, defined as R s /W, to within 4% as compared to before the doping, where R s is the channel's series resistance and W is the channel's width.
18. The OFET of claim 17 , wherein channel comprises an amine and iodine.
19. The OFET of claim 17 , wherein the channel further comprises charge compensating the semiconducting polymers and the one or more doping concentrations are such that 1% or less than 1% of monomers in the semiconducting polymers are doped.
20. The OFET of claim 17 , wherein the one or more doping concentrations are such that:
the OFET has a threshold voltage within +/−2 Volts of 0 Volts,
the OFET's on/off ratio remains the same or is increased as compared to without the doping,
the OFET's off current remains the same or is decreased as compared to without the doping, and
the OFET's contact resistance is reduced by at least a factor of two as compared to without the doping.
21. The OFET of claim 17 , wherein:
the one or more doping concentrations are characterized by an increase in absorption of the channel, at a wavelength in a range of 800 nm-1100 nm, of less than 0.5% as compared to without the doping, and/or
the doping increases the channel's carrier mobility to at least 58.6 cm 2 V −1 s −1 in a saturation regime and at least 18.1 cm 2 V −1 s −1 in a linear regime.
22. The OFET of claim 17 , wherein the semiconducting polymers that interface with the source contact and the semiconducting polymers that interface with the drain contact are oxidized.
23. An organic field effect transistor (OFET), comprising:
a channel comprising a semiconducting polymer, wherein the semiconducting polymer has a repeating unit of the structure:
and
wherein the fluorine (F) is regioregularly arranged along the semiconducting polymer's conjugated main chain section; and
wherein the R are each independently an alkyl, aryl, or an alkoxy chain;
a source contact to the channel;
a drain contact to the channel; and
a gate contact on or above the channel; and
end capping on both ends of the semiconducting polymer.
24. The OFET of claim 23 , wherein the semiconducting polymer has its main chain axis aligned with an alignment direction in the channel pointing from the source contact to the drain contact, so that charge transport between the source contact and the drain contact is preferentially along the semiconducting polymer's backbone and in the alignment direction.
25. The OFET of claim 24 , wherein the channel has a carrier mobility of at least 58.6 cm 2 V −1 s −1 .
26. The OFET of claim 23 , wherein the semiconducting polymer comprises PCDTFBT having the following structure:
and wherein n is greater than 6.
27. The OFET of claim 23 , wherein the semiconducting polymer comprises PCDTFBT having the following structure:
28. The OFET of claim 23 , wherein the semiconducting polymer comprises PCDTFBT having the following structure:
29. The OFET of claim 23 , wherein the semiconducting polymer has the repeating unit of the structure: