Semiconductor device and method of manufacturing the same
A third semiconductor layer ( 105 ) including a third nitride semiconductor is provided between an electrode ( 110 ) and a second semiconductor layer ( 104 ) including a second nitride semiconductor. The band gap of the second nitride semiconductor is set such that the carrier movement between a first semiconductor layer ( 103 ) and the third semiconductor layer ( 105 ) via the second semiconductor layer ( 104 ) is rate-determined by a diffusion process. The thickness of the second semiconductor layer ( 104 ) is set such that the carrier movement between the first semiconductor layer ( 103 ) and the third semiconductor layer ( 105 ) via the second semiconductor layer ( 104 ) is rate-determined by the diffusion process. The carrier movement between the first semiconductor layer ( 103 ) and the third semiconductor layer ( 105 ) via the second semiconductor layer ( 104 ) is rate-determined by a field emission process.
1. A semiconductor device comprising:
a first semiconductor layer including a first nitride semiconductor formed on a substrate;
a second semiconductor layer including a second nitride semiconductor having a band gap larger than that of the first nitride semiconductor, and is formed in contact with an upper surface of the first semiconductor layer;
a third semiconductor layer including a third nitride semiconductor of a conductivity type having a band gap equal to or greater than that of the second nitride semiconductor, and is formed in contact with an upper surface of the second semiconductor layer; and
an electrode including a metal nitride formed in contact with an upper surface of the third semiconductor layer,
wherein the second nitride semiconductor has a band gap with which a carrier movement between the first semiconductor layer and the third semiconductor layer via the second semiconductor layer is rate-determined by a diffusion process,
the second semiconductor layer has a thickness with which the carrier movement between the first semiconductor layer and the third semiconductor layer via the second semiconductor layer is rate-determined by the diffusion process, and
the carrier movement between the first semiconductor layer and the third semiconductor layer via the second semiconductor layer is rate-determined by a field emission process.
2. The semiconductor device according to claim 1 , wherein the third nitride semiconductor has nitrogen vacancies as a conductive impurity such that a conductivity type of the third nitride semiconductor is obtained.
3. The semiconductor device according to claim 1 , wherein the metal nitride is TiN.
4. The semiconductor device according to claim 1 , wherein a threading dislocation density in the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is equal to or less than 1×10 7 cm −2 .
5. A method of manufacturing a semiconductor device, comprising:
the first step of forming a first semiconductor layer including a first nitride semiconductor on a substrate;
the second step of forming a second semiconductor layer including a second nitride semiconductor having a band gap larger than that of the first nitride semiconductor in contact with an upper surface of the first semiconductor layer;
the third step of forming an electrode including a metal in contact with an upper surface of the second semiconductor layer; and
the fourth step of making the metal of the electrode react with the second nitride semiconductor of the second semiconductor layer by a sintering process by heating, forming a third semiconductor layer including a third nitride semiconductor of a conductivity type having a band gap equal to or greater than that of the second nitride semiconductor in contact with an upper surface of the second semiconductor layer, and forming the electrode including a nitride of the metal in contact with an upper surface of the third semiconductor layer,
wherein in the fourth step, the sintering process is performed until
the second nitride semiconductor of the second semiconductor layer obtains a band gap with which a carrier movement between the first semiconductor layer and the third semiconductor layer via the second semiconductor layer is rate-determined by a diffusion process, and
the second semiconductor layer obtains a thickness with which the carrier movement between the first semiconductor layer and the third semiconductor layer via the second semiconductor layer is rate-determined by the diffusion process, and
the carrier movement between the first semiconductor layer and the third semiconductor layer via the second semiconductor layer is rate-determined by a field emission process.
6. A method of manufacturing a semiconductor device, comprising:
the first step of forming a first semiconductor layer including a first nitride semiconductor on a substrate;
the second step of forming a second semiconductor layer including a second nitride semiconductor having a band gap larger than that of the first nitride semiconductor in contact with an upper surface of the first semiconductor layer;
the third step of forming a third semiconductor layer including a third nitride semiconductor of a conductivity type having a band gap equal to or greater than that of the second nitride semiconductor in contact with an upper surface of the second semiconductor layer; and
the fourth step of forming an electrode including a metal nitride in contact with an upper surface of the third semiconductor layer,
wherein the second nitride semiconductor has a band gap with which a carrier movement between the first semiconductor layer and the third semiconductor layer via the second semiconductor layer is rate-determined by a diffusion process,
the second semiconductor layer has a thickness with which the carrier movement between the first semiconductor layer and the third semiconductor layer via the second semiconductor layer is rate-determined by the diffusion process, and
the carrier movement between the first semiconductor layer and the third semiconductor layer via the second semiconductor layer is rate-determined by a field emission process.
7. The method of manufacturing the semiconductor device according to claim 5 , wherein a threading dislocation density in the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is set to be equal to or less than 1×10 7 cm −2 by using the substrate including a material in which lattice mismatch with the first nitride semiconductor is equal to or less than 2%.
8. The method of manufacturing the semiconductor device according to claim 6 , wherein a threading dislocation density in the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is set to be equal to or less than 1×10 7 cm −2 by using the substrate including a material in which lattice mismatch with the first nitride semiconductor is equal to or less than 2%.
9. The method of manufacturing the semiconductor device according to claim 5 , wherein the metal comprises Ti.
10. The method of manufacturing the semiconductor device according to claim 6 , wherein the metal comprises Ti.