Semiconductor device comprising a diode and electrostatic discharge protection device
A semiconductor device comprising at least two holes ( 18, 20 ) realized in a substrate ( 6 ), having each a width and a depth, and forming a diode ( 4 ), wherein the substrate ( 6 ) has a determined type of doping, wherein the inner wall of each hole ( 18, 20 ) is doped so that its doping is of the other type than the doping of the substrate ( 6 ), and wherein the width and/or the depth of a hole ( 18, 20 ) is different from the width and/or the depth of a neighboring hole.
1. A semiconductor device comprising,
at least two holes formed in a substrate, the at least two holes each having a width and a depth, and forming a diode,
wherein the substrate has a determined type of doping,
wherein respective inner side walls and a bottom of each hole are doped to have a doping other than the doping of the substrate, and
wherein at least one of a width and a depth of a hole is different from at least one of a width and a depth, respectively, of a neighboring hole.
2. A semiconductor device according to claim 1 , wherein each hole is a circular hole and in that the width of each hole corresponds to the diameter of the respective hole.
3. A semiconductor device according to claim 1 , wherein the diode comprises at least two lines of holes, each line of holes being parallel to the other lines,
wherein the respective holes of a same line of holes have the same width and the same depth, and
wherein at least one of the depth and the width the holes is growing in one direction from a line of holes to a neighboring line of holes.
4. A semiconductor device according to claim 1 , wherein each hole is a trench.
5. A semiconductor device according to claim 4 , wherein each trench is parallel to the other trenches, and
wherein at least one of the depth and the width of the trenches is growing in one direction from a trench to a neighboring trench.
6. A semiconductor device according to claim 5 , wherein each trench comprises a length that
is growing in said one direction from a trench to a neighboring trench.
7. A semiconductor device according claim 1 , wherein the at least two holes are coupled in parallel.
8. An electrostatic discharge device, comprising at least two diodes according to claim 1 .
9. An electrostatic discharge device according to claim 8 , wherein each diode comprises lines of holes and the lines of holes of a second diode are parallel to the lines of holes of a first diode.
10. An electrostatic discharge device according to claim 8 , wherein each diode comprises trenches and the trenches of a second diode are parallel to the trenches of a first diode.
11. An electrostatic device according to claim 8 , wherein the first diode and the second diode are coupled in back to back position.
12. An electrostatic discharge device according to claim 8 , comprising at least two semiconductor devices stacked together.
13. An electrostatic discharge system according to claim 8 , wherein the electrostatic discharge system is coupled to at least one of an active and a passive electronic component.