Surface acoustic wave (SAW) resonator
An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 Ω-cm, and less than approximately 15000 Ω-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 μm to approximately 30.0 μm, and is substantially without iron (Fe).
1. An apparatus, comprising:
a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 Ω-cm, and less than approximately 15000 Ω-cm; and
a piezoelectric layer disposed over the silicon substrate and having a first surface and a second surface, wherein the piezoelectric layer has an optical absorptivity of greater than approximately 0.1 cm −1 to less than approximately 1.0 cm −1 at an optical wavelength of approximately 500 nm.
2. The apparatus of claim 1 , wherein the piezoelectric layer comprises lithium niobate (LiNbO 3 ) or lithium tantalate (LiTaO 3 ).
3. The apparatus of claim 2 , wherein the piezoelectric layer has a thickness in a range of approximately 0.5 μm to approximately 30.0 μm.
4. The apparatus of claim 2 , wherein the piezoelectric layer is substantially without iron (Fe).
5. The apparatus of claim 1 , further comprising:
a plurality of electrodes disposed over the first surface of the piezoelectric layer, the plurality of electrodes configured to generate surface acoustic waves in the piezoelectric layer.
6. The apparatus as claimed in claim 5 , further comprising:
a layer disposed between the first surface of the silicon substrate and the second surface of the piezoelectric layer, the layer having a first surface and a second surface, either the second surface of the layer having a smoothness sufficient to foster atomic bonding between the second surface of the layer and the first surface of the silicon substrate, or the first surface of the layer having a smoothness sufficient to foster atomic bonding between the first surface of the layer and the second surface of the piezoelectric layer; and
a plurality of features on the second surface of the piezoelectric layer, or on the first surface of the silicon substrate, the plurality of features configured to reflect acoustic waves and reduce an incidence of spurious modes in the piezoelectric layer.
7. The apparatus as claimed in claim 6 , wherein the reflected acoustic waves destructively interfere with acoustic waves in the piezoelectric layer.
8. The apparatus as claimed in claim 6 , wherein at least some of the plurality of features have substantially slanted sides.
9. The apparatus as claimed in claim 8 , wherein at least some of the plurality of features are substantially not in a regular pattern.
10. The apparatus as claimed in claim 6 , wherein the at least some of the plurality of features have a height of approximately one-fourth of a wavelength (¼λ) of a spurious mode.
11. The apparatus as claimed in claim 10 , wherein the at least some of the plurality of features have a height in a range of approximately 0.25 μm to approximately 1.5 μm.
12. The apparatus as claimed in claim 10 , wherein the at least some of the plurality of features have a height in a range of approximately 0.1 μm to approximately 2.50 μm.
13. The apparatus as claimed in claim 6 , wherein the layer comprises an oxide material.
14. The apparatus as claimed in claim 13 , wherein the oxide material comprises one of silicon dioxide (SiO 2 ), borosilicate glass (BSG), or phosphosilicate glass (PSG).
15. The apparatus as claimed in claim 6 , wherein the second surface of the layer has a root-mean-square (RMS) variation in height of approximately 0.1 Å to approximately 10.0 Å.
16. The apparatus as claimed in claim 1 , wherein the piezoelectric layer has a direct current (DC) electrical resistivity at room temperature greater than approximately 10 12 Ω-cm and less than approximately 10 15 Ω-cm.
17. A surface acoustic wave (SAW) filter comprising a plurality of SAW resonator structures, one or more of the plurality of SAW resonator structures comprising:
a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature that is greater than approximately 1000 Ω-cm and less than approximately 15000 Ω-cm; and
a piezoelectric layer disposed over the silicon substrate and having a first surface and a second surface wherein the piezoelectric layer has an optical absorptivity of greater than approximately 0.1 cm −1 to less than approximately 1.0 cm −1 at an optical wavelength of approximately 500 nm.
18. The SAW filter as claimed in claim 17 , wherein the piezoelectric layer has a direct current (DC) electrical resistivity at room temperature greater than approximately 10 12 Ω-cm and less than approximately 10 15 Ω-cm.
19. The SAW filter of claim 17 , wherein the piezoelectric layer comprises lithium niobate (LiNbO 3 ) or lithium tantalate (LiTaO 3 ).
20. The SAW filter of claim 17 , wherein the piezoelectric layer has a thickness in a range of approximately 0.5 μm to approximately 30.0 μm.
21. The SAW filter of claim 20 , wherein the piezoelectric layer is substantially without iron (Fe).
22. The SAW filter of claim 17 , further comprising:
a plurality of electrodes disposed over the first surface of the piezoelectric layer, the plurality of electrodes configured to generate surface acoustic waves in the piezoelectric layer.
23. The SAW filter as claimed in claim 22 , further comprising:
a layer disposed between the first surface of the silicon substrate and the second surface of the piezoelectric layer, the layer having a first surface and a second surface, the second surface of the layer having a smoothness sufficient to foster atomic bonding between the second surface of the layer and the first surface of the silicon substrate, or the first surface of the layer having a smoothness sufficient to foster atomic bonding between the first surface of the layer and the second surface of the piezoelectric layer; and
a plurality of features on the second surface of the piezoelectric layer, or on the first surface of the silicon substrate, the plurality of features configured to reflect acoustic waves and reduce an incidence of spurious modes in the piezoelectric layer.
24. The SAW filter as claimed in claim 23 , wherein the reflected acoustic waves destructively interfere with acoustic waves in the piezoelectric layer.
25. The SAW filter as claimed in claim 23 , wherein at least some of the plurality of features have substantially slanted sides.
26. The SAW filter as claimed in claim 23 , wherein at least some of the plurality of features are substantially not in a regular pattern.
27. An apparatus, comprising:
a silicon (Si) substrate having a first surface and a second surface, wherein the silicon substrate has a resistivity at room temperature greater than approximately 1000 Ω-cm, and less than approximately 15000 Ω-cm; and
a piezoelectric layer comprising lithium niobate (LiNbO 3 ) or lithium tantalate (LiTaO 3 ), the piezoelectric layer being disposed over the silicon substrate and having a first surface and a second surface, the piezoelectric layer having an optical absorptivity of greater than approximately 0.1 cm −1 to less than approximately 1.0 cm −1 at an optical wavelength op approximately 500 nm, wherein the piezoelectric layer does not comprise oxygen dopants.
28. The apparatus of claim 27 , wherein the piezoelectric layer is substantially without iron (Fe).
29. The apparatus of claim 27 , further comprising:
a plurality of electrodes disposed over the first surface of the piezoelectric layer, the plurality of electrodes configured to generate surface acoustic waves in the piezoelectric layer.
30. The apparatus as claimed in claim 29 , further comprising:
a layer disposed between the first surface of the silicon substrate and the second surface of the piezoelectric layer, the layer having a first surface and a second surface, either the second surface of the layer having a smoothness sufficient to foster atomic bonding between the second surface of the layer and the first surface of the silicon substrate, or the first surface of the layer having a smoothness sufficient to foster atomic bonding between the first surface of the layer and the second surface of the piezoelectric layer; and
a plurality of features on the second surface of the piezoelectric layer, or on the first surface of the silicon substrate, the plurality of features configured to reflect acoustic waves and reduce an incidence of spurious modes in the piezoelectric layer.
31. The apparatus as claimed in claim 30 , wherein the reflected acoustic waves destructively interfere with acoustic waves in the piezoelectric layer.
32. The apparatus as claimed in claim 30 , wherein at least some of the plurality of features have substantially slanted sides.
33. The apparatus as claimed in claim 32 , wherein the at least some of the plurality of features have a height in a range of approximately 0.25 μm to approximately 1.5 μm.
34. The apparatus as claimed in claim 32 , wherein the at least some of the plurality of features have a height in a range of approximately 0.1 μm to approximately 2.50 μm.
35. The apparatus as claimed in claim 30 , wherein at least some of the plurality of features are substantially not in a regular pattern.
36. The apparatus as claimed in claim 30 , wherein the at least some of the plurality of features have a height of approximately one-fourth of a wavelength (¼λ) of a spurious mode.
37. The apparatus as claimed in claim 30 , wherein the layer comprises an oxide material.
38. The apparatus as claimed in claim 37 , wherein the oxide material comprises one of silicon dioxide (SiO 2 ), borosilicate glass (BSG), or phosphosilicate glass (PSG).
39. The apparatus as claimed in claim 30 , wherein the second surface of the layer has a root-mean-square (RMS) variation in height of approximately 0.1 Å to approximately 10.0 Å.
40. The apparatus as claimed in claim 27 , wherein the piezoelectric layer has a direct current (DC) electrical resistivity at room temperature greater than approximately 10 12 Ω-cm and less than approximately 10 15 Ω-cm.
41. An apparatus, comprising:
a silicon (Si) substrate having a first surface and a second surface, wherein the silicon substrate has a resistivity at room temperature greater than approximately 1000 Ω-cm, and less than approximately 15000 Ω-cm;
a piezoelectric layer comprising lithium niobate (LiNbO 3 ) or lithium tantalate (LiTaO 3 ), the piezoelectric layer being disposed over the silicon substrate and having a first surface and a second surface, wherein the piezoelectric layer does not comprise oxygen dopants;
a plurality of electrodes disposed over the first surface of the piezoelectric layer, the plurality of electrodes configured to generate surface acoustic waves in the piezoelectric layer;
a layer disposed between the first surface of the silicon substrate and the second surface of the piezoelectric layer, the layer having a first surface and a second surface, either the second surface of the layer having a smoothness sufficient to foster atomic bonding between the second surface of the layer and the first surface of the silicon substrate, or the first surface of the layer having a smoothness sufficient to foster atomic bonding between the first surface of the layer and the second surface of the piezoelectric layer; and
a plurality of features on the second surface of the piezoelectric layer, or on the first surface of the silicon substrate, the plurality of features configured to reflect acoustic waves and reduce an incidence of spurious modes in the piezoelectric layer.