IP Library Granted Patent US 10,185,190
Granted Patent B2
US 10,185,190 · App. 15/584,239 · Granted Jan 22, 2019

Display device, module, and electronic device

Inventors: Shunpei Yamazaki (Setagaya, JP); Junichi Koezuka (Tochigi, JP); Natsuko Takase (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G02F1/1347G02F1/136G02F1/1362G02F1/133345H01L27/3276H01L51/0097G02F1/13338G02F2001/133796G02F2001/136218G09G2300/0809H01L2227/323H01L2251/5338
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Quick Facts
Patent No.
US 10,185,190
App. No.
15/584,239
Granted
Jan 22, 2019
Kind
B2
Abstract

Display defects of a display device are reduced. The display quality of a display device is improved. A reliable display device is provided. A display device includes a substrate, a conductive layer over the substrate, and a transistor and a light-emitting element over the conductive layer. The transistor and the light-emitting element are each electrically insulated from the conductive layer. The transistor and the light-emitting element each overlap with the substrate with the conductive layer located therebetween. A constant potential is supplied to the conductive layer. The display device may further include a resin layer. In that case, the conductive layer overlaps with the substrate with the resin layer located therebetween. The resin layer has a thickness of more than or equal to 0.1 μm and less than or equal to 3 μm, for example. The resin layer has a 5% weight-loss temperature of lower than 400° C., for example.

Claims (60)

1. A display device comprising:

a substrate;

a first conductive layer over the substrate;

a resin layer between the substrate and the first conductive layer; and

a transistor and a light-emitting element over the first conductive layer,

wherein the transistor and the light-emitting element are each electrically insulated from the first conductive layer,

wherein the transistor and the light-emitting element each overlap with the substrate with the first conductive layer located therebetween, and

wherein a constant potential is supplied to the first conductive layer.

2. The display device according to claim 1 , wherein the resin layer has a thickness of more than or equal to 0.1 μm and less than or equal to 3 μm.

3. The display device according to claim 1 , wherein the resin layer has a 5% weight-loss temperature of lower than 400° C.

4. The display device according to claim 1 , wherein the resin layer has an opening, and wherein at least a portion of the first conductive layer is exposed through the opening in the resin layer.

5. The display device according to claim 4 ,

wherein the substrate has an opening,

wherein a portion of the opening in the substrate overlaps with the opening in the resin layer, and

wherein at least a portion of the first conductive layer is exposed through the opening in the substrate.

6. The display device according to claim 1 , further comprising an inorganic insulating layer over the first conductive layer,

wherein the transistor and the light-emitting element are over the inorganic insulating layer.

7. The display device according to claim 1 , wherein the transistor comprises an oxide semiconductor in a channel formation region.

8. The display device according to claim 1 , wherein the substrate has flexibility.

9. The display device according to claim 1 , wherein the first conductive layer comprises an oxide conductor.

10. A display device comprising:

a substrate;

a first resin layer over the substrate;

a first conductive layer over the first resin layer;

a second resin layer over the first conductive layer; and

a transistor and a light-emitting element over the second resin layer,

wherein the transistor and the light-emitting element are each electrically insulated from the first conductive layer,

wherein the transistor and the light-emitting element each overlap with the substrate with the first conductive layer located therebetween,

wherein the first conductive layer overlaps with the substrate with the first resin layer located therebetween, and

wherein a constant potential is supplied to the first conductive layer.

11. The display device according to claim 10 , further comprising a first inorganic insulating layer over the first conductive layer,

wherein the second resin layer is over the first inorganic insulating layer.

12. The display device according to claim 11 , further comprising a second inorganic insulating layer over the second resin layer,

wherein the transistor and the light-emitting element are over the second inorganic insulating layer.

13. The display device according to claim 10 , wherein the first resin layer has a thickness of more than or equal to 0.1 μm and less than or equal to 3 μm.

14. The display device according to claim 10 , wherein the first resin layer has a 5% weight-loss temperature of lower than 400° C.

15. The display device according to claim 10 ,

wherein the first resin layer has an opening, and

wherein at least a portion of the first conductive layer is exposed through the opening in the first resin layer.

16. The display device according to claim 15 ,

wherein the substrate has an opening,

wherein a portion of the opening in the substrate overlaps with the opening in the first resin layer, and

wherein at least a portion of the first conductive layer is exposed through the opening in the substrate.

17. The display device according to claim 10 , wherein the transistor comprises an oxide semiconductor in a channel formation region.

18. The display device according to claim 10 , wherein the substrate has flexibility.

19. The display device according to claim 10 , wherein the first conductive layer comprises an oxide conductor.

20. A module comprising:

the display device according to claim 1 ; and

a first connection wiring,

wherein the display device comprises a second conductive layer,

wherein the second conductive layer is electrically insulated from the first conductive layer, and

wherein the second conductive layer is electrically connected to the first connection wiring.

21. The module according to claim 20 , wherein the second conductive layer overlaps with the substrate with the first conductive layer located therebetween.

22. The module according to claim 20 , wherein the second conductive layer overlaps with the substrate with the first conductive layer not located therebetween.

23. The module according to claim 20 , further comprising a flexible printed circuit board,

wherein the flexible printed circuit board comprises the first connection wiring and a second connection wiring, and

wherein the first conductive layer is electrically connected to the second connection wiring.

24. An electronic device comprising:

the module according to claim 20 ; and

at least one of a sensor, an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2017
From: YAMAZAKI, SHUNPEI; KOEZUKA, JUNICHI; TAKASE, NATSUKO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 042210/0221 →
Priority Claims (1)
JP 2016-095254 · May 11, 2016 · national
Continuity (1)
Related Publication 20170329162A1 · Nov 16, 2017
Cited By (1)
US 12,207,534