IP Library › Granted Patent US 10,186,304
Granted Patent B2
US 10,186,304 · App. 15/692,132 · Granted Jan 22, 2019

Memory device and a clock distribution method thereof

Inventor: Sang-Kyu Kang (Anyang-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G11C7/222G06F3/0629G06F12/0246G06F12/0891G11C5/04G11C7/02G11C7/1075G11C7/225H01L25/105G11C7/1057G11C7/1066G11C7/1084G11C7/1093
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Quick Facts
Patent No.
US 10,186,304
App. No.
15/692,132
Granted
Jan 22, 2019
Kind
B2
Abstract

A memory device includes a first data buffer receiving data of a first frequency band or a second frequency band, a first clock buffer providing a clock signal of the first frequency band to the first data buffer when the first data buffer receives the data of the first frequency band and providing a clock signal of the second frequency band to the first data buffer when the first data buffer receives the data of the second frequency band, a second data buffer receiving the data of the first frequency band or the second frequency band and receiving the clock signal of the second frequency band from the first clock buffer in response to receiving the data of the second frequency band, and a second clock buffer providing the clock signal of the first frequency band to the second data buffer in a first frequency band operation.

Claims (41)

1. A memory device, comprising:

a first data buffer set configured to receive data of a first frequency band or data of a second frequency band from a host, wherein the second frequency band is lower in frequency than the first frequency band;

a first clock buffer configured to provide a clock signal of the first frequency band to the first data buffer set when the first data buffer set receives the data of the first frequency band and to provide a clock signal of the second frequency band to the first data buffer set when the first data buffer set receives the data of the second frequency band;

a second data buffer set configured to receive the data of the first frequency band or the data of the second frequency band from the host and to receive the clock signal of the second frequency band from the first clock buffer in response to receiving the data of the second frequency band; and

a second clock buffer configured to provide the clock signal of the first frequency band to the second data buffer set in a first frequency band operation in which each of the first and second data buffer sets receives the data of the first frequency band.

2. The memory device of claim 1 , wherein the second clock buffer does not operate in a second frequency band operation in which each of the first and second data buffer sets receives the data of the second frequency band.

3. The memory device of claim 1 , wherein each of the first and second clock buffers operate as a differential input buffer when the first and second clock buffers provide the clock signal of the first frequency band to the first and second data buffer sets in the first frequency band operation, respectively.

4. The memory device of claim 3 , wherein the first clock buffer operates as the differential input buffer when the first clock buffer provides the clock signal of the second frequency band to each of the first and second data buffer sets in a second frequency band operation.

5. The memory device of claim 3 , wherein the first clock buffer operates as a single input buffer when the first clock buffer provides the clock signal of the second frequency band to each of the first and second data buffer sets in a second frequency band operation.

6. The memory device of claim 3 , wherein in a third frequency band operation in which each of the first and second data buffer sets receives data of a third frequency band, the first and second clock buffers provide a clock signal of the third frequency band to the first and second data buffer sets respectively, and each of the first and second clock buffers operates as a single input buffer, wherein the third frequency band is lower in frequency than the first frequency band.

7. The memory device of claim 1 , further comprising:

a multiplexer configured to select a clock signal transferred from the second clock buffer in the first frequency band operation or a clock signal transferred from the first clock buffer in a second frequency band operation and to provide the selected clock signal to the second data buffer set.

8. The memory device of claim 1 , further comprising:

a mode register configured to store a control code that controls operations providing a clock signal of the first and second clock buffers and to provide the stored control code to the first clock buffer or the second clock buffer, wherein the control code is provided from the host to the mode register.

9. The memory device of claim 1 , further comprising:

a third clock buffer configured to provide a clock signal of a third frequency band to each of the first and second data buffer sets in a third frequency band operation.

10. The memory device of claim 9 , wherein the third clock buffer is arranged between the first clock buffer and the second clock buffer.

11. The memory device of claim 9 , further comprising:

a first multiplexer configured to select a clock signal transferred from the first clock buffer in the first frequency band operation or a clock signal transferred from the third clock buffer in the third frequency band operation and to provide the selected clock signal to the first data buffer set; and

a second multiplexer configured to select a clock signal transferred from the second clock buffer in the first frequency band operation, the clock signal transferred from the first clock buffer in a second frequency band operation, or the clock signal transferred from the third clock buffer in the third frequency band operation and to provide the selected clock signal to the second data buffer set.

12. The memory device of claim 9 , further comprising:

a clock signal pad set for transferring a clock signal received from the host to the third clock buffer.

13. A clock signal providing method of a memory device, the method comprising:

determining a clock distribution method of the memory device such that first and second clock buffers included in the memory device provide a clock signal of a first frequency band to first and second data buffer sets included in the memory device respectively in a first frequency band operation and such that the first clock buffer provides a clock signal of a second frequency band to each of the first and second data buffer sets in a second frequency band operation, wherein the second frequency band is lower in frequency than the first frequency band; and

setting, at the memory device, the determined clock distribution method for each of the first and second frequency bands of the clock signals, when the memory device receives data from a host.

14. The method of claim 13 , wherein the determining of the clock distribution method comprises:

allowing the first and second clock buffers to provide a clock signal of a third frequency band to the first and second data buffer sets, respectively in a third frequency band operation, wherein the third frequency band is lower in frequency than the first frequency band; and

wherein each of the first and second clock buffers operates as a single input buffer.

15. The method of claim 13 , wherein the determining of the clock distribution method comprises:

determining a clock distribution method of the memory device such that a third clock buffer included in the memory device provides a clock signal of a third frequency band to each of the first and second data buffer sets in a third frequency band operation; and

wherein the third clock buffer is arranged between the first clock buffer and the second clock buffer.

16. A memory device, comprising:

a first clock buffer configured to receive a first clock signal pair and output a first internal clock signal that corresponds to one of the first clock signal pair in response to a control signal;

a first data buffer set configured to receive the first internal clock signal;

a second clock buffer configured to receive a second clock signal pair and output a second internal clock signal that corresponds to one of the second clock signal pair in response to the control signal;

a multiplexer configured to receive the first and second internal clock signals and output one of the first and second internal clock signals as a third internal clock signal in response to the control signal; and

a second data buffer set configured to receive the third internal clock signal.

17. The memory device of claim 16 , wherein the first clock buffer is disposed between a first portion of the first data buffer set and a second portion of the first data buffer set.

18. The memory device of claim 16 , wherein the second clock buffer is disposed between a first portion of the second data buffer set and a second portion of the second data buffer set.

19. The memory device of claim 16 , wherein the first clock buffer includes a single input buffer and a differential input buffer.

20. The memory device of claim 19 , wherein the single input buffer and the differential input buffer operate one at a time in response to the control signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 31, 2017
From: KANG, SANG-KYU
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 043735/0637 →
Priority Claims (1)
KR 10-2016-0119393 · Sep 19, 2016 · national
Continuity (1)
Related Publication 20180082726A1 · Mar 22, 2018
Cited By (1)
US 12,591,394