Method and apparatus for gas abatement
Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.
1. A plasma source, comprising:
a dielectric tube;
a coil antenna surrounding the dielectric tube, wherein the coil antenna comprises a plurality of turns; and
a first metal connector connected to a first pair of turns of the plurality of turns.
2. The plasma source of claim 1 , wherein the first pair of turns comprises two adjacent turns.
3. The plasma source of claim 1 , wherein the first pair of turns comprises two turns, and the plasma source further comprises one or more turns between the two turns.
4. The plasma source of claim 1 , further comprising a second metal connector connecting a second pair of turns of the plurality of turns.
5. The plasma source of claim 1 , wherein the first metal connector comprises an electrical grade conductive material.
6. The plasma source of claim 5 , wherein the electrical grade conductive material comprises copper, aluminum, or brass.
7. The plasma source of claim 1 , wherein the dielectric tube comprises aluminum nitride, sapphire, or quartz.
8. An abatement system, comprising:
a power source; and
a plasma source, wherein the plasma source comprises:
a dielectric tube having an inlet and an outlet;
a coil antenna surrounding the dielectric tube, wherein the coil antenna comprises a plurality of turns; and
a first metal connector connected to a first pair of turns of the plurality of turns.
9. The abatement system of claim 8 , further comprising a second metal connector connecting a second pair of turns of the plurality of turns.
10. The abatement system of claim 8 , wherein the first metal connector comprises an electrical grade conductive material.
11. The abatement system of claim 10 , wherein the electrical grade conductive material comprises copper, aluminum, or brass.
12. The abatement system of claim 8 , wherein the coil antenna is hollow.
13. The abatement system of claim 8 , wherein the power source is a radio frequency power source for providing a radio frequency power ranging from 3 kW to 6 kW.
14. A vacuum processing system, comprising:
a vacuum processing chamber; and
a plasma source, wherein the plasma source comprises:
a dielectric tube having an inlet and an outlet;
a coil antenna surrounding the dielectric tube, wherein the coil antenna comprises a plurality of turns; and
a first metal connector connected to a first pair of turns of the plurality of turns.
15. The vacuum processing system of claim 14 , further comprising a second metal connector connecting a second pair of turns of the plurality of turns.
16. The vacuum processing system of claim 14 , wherein the first metal connector comprises an electrical grade conductive material.
17. The vacuum processing system of claim 16 , wherein the electrical grade conductive material comprises copper, aluminum, or brass.