Adhesion improvement via material nanostructuring or texturizing
A embodiment of the invention includes providing a system and method in accordance with an embodiment of the invention including processing a target surface of interest to adjust interfacial material characteristics such as increasing surface area and/or chemical interaction properties via laser texturizing such as via increasing porosity. An embodiment can include an ultrashort pulse laser (USPL), wherein laser pulses are of a duration of femtoseconds, and adapting the USPL's laser energy output irradiance to athermally convert the target surface of interest's material into a plasma state for re-deposition on the target surface; applying the exemplary embodiment's laser beam energy in a raster pattern across the target surface, wherein the USPL is adapted to nano-structure or texturize the target surface to produce a region having a surface covered by texturized structures that can include nano structures increasing adhesion or chemical reaction properties of the target surface.
1. A method of treating a material surface comprising:
selecting a material of interest to be processed comprising a target surface of interest;
determining a surface adhesion transformation of said target surface of interest based on said material's properties, a shape of said target surface of interest, an adhesion material, and required degree of adhesion between said target surface of interest and another object's surface, wherein said material's properties comprise mechanical or chemical interfacial material properties required after application of said method;
providing an at least one ultra-short pulse laser system (USPL), a rastering system adapted for controlling rastering of laser energy output of said USPL over said target surface of interest based on said determined surface adhesion transformation of said target surface of interest, and an environmental system to control environmental conditions around said target surface of interest comprising one or more target adhered surfaces to be modified, wherein said surface adhesion transformation comprises a transformation of said target surface of interest to a first depth resulting in an increase of porosity or texture of said target surface of interest which alters chemical bonding properties and adhesion properties of the target surface of interest;
configuring said USPL by adapting said laser energy output so said USPL is operable to convert a portion of said target surface of interest's material up to a second depth into a plasma state during application of said laser energy output, said configuring of said USPL by programming said USPL comprises a configuration so said USPL is operable to a pre-determined irradiance, pulse duration of femtoseconds (fs) to restructure said target surface of interest, and pulse frequency, laser wavelength, and laser polarization based on said determined surface adhesion transformation so said USPL is operable to create nano-structures on said target surface of interest during application of said laser energy output to produce a resultant processed region having a surface covered by pre-determined nano structure formations which alter the resultant processed region to increase surface area and thereby increase adhesion properties of said surface of the processed region;
configuring said system adapted for rastering said laser energy output over said target surface of interest to apply said laser energy output in a pre-determined rasterization pattern and laser angle to said target surface of interest during application of said laser energy output; and
applying said laser energy output based on said programming, said determined surface level of adhesion, and said adapting of said laser energy output thereby exposing said target surface of interest wherein a laser beam of said USPL is rastered across said target surface of interest, adjusting one or more positions of said laser beam relative to said target surface of interest by a width of a functional beam diameter of said laser beam with each pass of the USPL.
2. The method of claim 1 , further comprising:
applying a pre-determined variance of processing parameters of said laser adapted to result in a pre-determined variety of surface alterations to produce said surface adhesion transformation.
3. The method of claim 1 , further comprising:
applying a pre-determined variance of environmental conditions at said target surface of interest during USPL processing so as to alter resultant surface chemistry of said target surface of interest and thereby resulting in increased chemical bonding properties of the resultant processed region which comprises an adherend surface.
4. The method of claim 1 , further comprising:
providing multiple said USPLs integrated into an automated industrial system adapted to raster multiple said laser energy output over said target material of interest's surface.
5. The method of claim 1 , wherein said material of interest to be processed is a metal.
6. The method of claim 1 , wherein said material of interest to be processed is a non-metal.
7. The method of claim 5 , wherein said material of interest to be processed is a bulk material.
8. The method of claim 6 , wherein said material of interest to be processed is a bulk material.
9. The method of claim 1 , further comprising:
programming said system of rastering said USPL based on said material of interest, in a pre-determined pattern, speed, and depth of said USPL beam penetration in order to athermally restructure said target surface of interest to produce said surface adhesion transformation.
10. The method of claim 1 , wherein said by pre-determined nano structure formations comprise an increase in three dimensional structures in said surface of interest so as to increase total surface area and provide a plurality of protrusions from said target surface area comprising said pre-determined nano structure formations.
11. The method of claim 1 wherein said step of configuring said USPL by adapting said laser energy output comprises configuring said USPL so it is operable to athermally convert said target surface of interest's material into said plasma state which permits redeposition of said material onto said target surface.
12. The method of claim 1 , wherein the first depth is a value such that the nano-structures on said target surface of interest are above an original height of said target surface of interest.
13. The method of claim 1 , wherein when said USPL creates nano-structures on said target surface of interest, the mass of material remains approximately constant and a surface area of the target surface of interest increases.
14. The method of claim 1 , wherein said transformation of said target surface of interest to the first depth increases porosity of said target surface.
15. The method of claim 14 , wherein when said transformation of said target surface of interest to the first depth increases porosity of said target surface, surface adhesion of said target surface increases.