IP Library Granted Patent US 10,189,699
Granted Patent B2
US 10,189,699 · App. 15/819,767 · Granted Jan 29, 2019

MEMS device and MEMS vacuum microphone

Inventors: Arnaud Walther (Unterhaching, DE); Alfons Dehe (Reutlingen, DE); Johann Strasser (Schierling, DE); Gerhard Metzger-Brueckl (Geisenfeld, DE)
Assignee: INFINEON TECHNOLOGIES AG
B81B3/0086H04R19/005H04R19/04B81B2201/0257B81B2203/0127H04R31/006H04R2201/003
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Quick Facts
Patent No.
US 10,189,699
App. No.
15/819,767
Granted
Jan 29, 2019
Kind
B2
Abstract

In accordance with an embodiment, a MEMS device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.

Claims (30)

1. A method of reading out a MEMS device, the MEMS device comprising first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a first conducting layer, which is at least partially arranged in the low pressure region or extends in the low pressure region, wherein the first conducting layer comprises a segmentation providing an electrical isolation between a first portion of the first conducting layer and a second portion of the first conducting layer, the method comprising:

providing a signal generated by a deflection of the first membrane element and a deflection of the second membrane element.

2. The method according to claim 1 , further comprising:

biasing the first portion of the first conducting layer of the counter electrode structure with a first voltage, and

reading-out the signal.

3. The method according to claim 1 , wherein the counter electrode structure comprises the first conducting layer and, further, a second conducting layer, wherein the second conducting layer comprises a further segmentation providing an electrical isolation between a first portion of the second conducting layer and a second portion of the second conducting layer, the method further comprising:

biasing the first portion of the first conducting layer with a first voltage,

biasing the first portion of the second conducting layer with a second voltage, and

reading-out the signal.

4. The method according to claim 3 , wherein the first portion of the first conducting layer and the first portion of the second conducting layer are not electrically connected, and wherein the first voltage and the second voltage are different.

5. The method according to claim 3 , wherein the second portion of the first conducting layer is electrically connected to the first and second membrane element, and wherein the second portion of the second conducting layer is electrically connected to the first and second membrane element.

6. The method according to claim 1 , further comprising:

biasing the first membrane element and the second membrane element with a reference potential, and

reading-out the signal.

7. The method according to claim 1 , further comprising:

biasing the first membrane element with a first voltage,

biasing the second membrane element with a second reference potential, and

reading-out the signal.

8. A method of reading out a MEMS device, the MEMS device comprising a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a first conducting layer which is at least partially arranged in the low pressure region or extends in the low pressure region, wherein the first membrane element comprises a segmentation providing an electrical isolation between a first portion of the first membrane element and a second portion of the first membrane element, and wherein the second membrane element comprises a further segmentation comprising an electrical isolation between a first portion of the second membrane element and a second portion of the second membrane element, the method comprising:

providing a signal generated by a deflection of the first membrane element and a deflection of the second membrane element.

9. The method according to claim 8 , further comprising:

biasing the first conducting layer of the counter electrode structure with a reference voltage, and

reading-out the signal.

10. The method according to claim 8 , wherein the second portion of the first membrane element and the second portion of the second membrane element are electrically connected to the first conducting layer of the counter electrode structure.

11. The method according to claim 8 , wherein the MEMS device further comprises a second conducting layer, the method further comprising:

biasing the first conducting layer with a first voltage,

biasing the second conducting layer with a second voltage, and

reading-out the signal.

12. The method according to claim 11 , wherein the first portion of the first membrane element and the first portion of the second membrane element are not electrically connected, and wherein the first voltage and second voltage are different.

13. The method according to claim 11 , wherein the second portion of the first membrane element and the second portion of the second membrane element are electrically connected to the first and second conducting layer of the counter electrode structure.

Continuity (2)
Continuation 15066741 · Mar 10, 2016
Related Publication 20180099867A1 · Apr 12, 2018
Cited By (3)
US 12,199,575 US 12,240,748 US 12,304,808