IP Library › Granted Patent US 10,191,308
Granted Patent B2
US 10,191,308 · App. 15/375,554 · Granted Jan 29, 2019

Optoelectronic device and smart window comprising the same

Inventors: Seunghoon Han (Seoul, KR); Yanping Liu (Albany, CA); Jie Yao (Berkeley, CA); Kyle Tom (Berkeley, CA)
Assignees: SAMSUNG ELECTRONICS CO., LTD.; THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
G02F1/061E06B7/28E06B9/24G02B1/14G02B26/02E06B2009/2464G02F2201/12G02F2202/02G02F2202/36
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,191,308
App. No.
15/375,554
Granted
Jan 29, 2019
Kind
B2
Abstract

Provided is an optical modulator having high resolution and being capable of controlling a wavelength range of reflected/transmitted light. The optical modulator may include a plurality of nanostructures capable of changing refractive index and a first insulation layer surrounding the plurality of nanostructures. The refractive index of each of the nanostructures may be greater than that of the first insulation layer. The nanostructures may modulate light depending on a change in the refractive index thereof. A change in a resonance wavelength, intensity, phase, polarization, etc. of reflected/transmitted light may be generated.

Claims (33)

1. An optoelectronic device comprising:

a substrate;

an electrode member disposed on the substrate, wherein the electrode member comprises a first electrode and a second electrode;

an active layer located between the first electrode and the second electrode; and

an ionic liquid covering the active layer, the first electrode and the second electrode.

2. The optoelectronic device of claim 1 , wherein the active layer comprises a chalcogenide nanoplate.

3. The optoelectronic device of claim 2 , wherein the chalcogenide nanoplate comprises at least one material selected from Bi 2 Se 3 , MoSe 2 , GaSe, MoS 2 , WSe 2 , WS 2 , Bi 2 Te 3 , ZnSe, InSe, In 2 Se 3 , and ReS 2 .

4. The optoelectronic device of claim 1 , wherein the active layer comprises a two-dimensional (2D) layered structure material.

5. The optoelectronic device of claim 4 , wherein the 2D layered structure material comprises at least one material selected from Bi 2 Se 3 , MoSe 2 , black phosphorus, ZnO, GaAs, Si and Ge.

6. The optoelectronic device of claim 1 , wherein a thickness of the active layer is about 20 nm or less.

7. The optoelectronic device of claim 1 , wherein the ionic liquid comprises at least one material selected from [DEME][TFSI], [DEME][BF4], [EMIM]-[BF4], [BMIM][BF4], [BMIM][TFSI], [TMPA][BF4], [DEME][FSI], and [EMIM][FSI].

8. The optoelectronic device of claim 1 , further comprising a power source coupled with the electrode member, wherein the power source modulates an optical property of the optoelectronic device.

9. The optoelectronic device of claim 8 , wherein the power source applies a voltage of −3 V to 3 V to the electrode member so as to modulate transparency of the optoelectronic device.

10. The optoelectronic device of claim 1 , wherein the first electrode is electrically isolated from the active layer.

11. The optoelectronic device of claim 1 , wherein the substrate comprises at least one material selected from glass, sapphire, quartz, silicon dioxide, silicon nitride, gallium nitride, plastics, boron nitride, ITO, AZO, IZO, FTO, CdO, CdZnO, CdNiO, PEDOT, and graphene.

12. The optoelectronic device of claim 1 , further comprising a protection layer covering the optoelectronic device.

13. The optoelectronic device of claim 12 , wherein the ionic liquid is encapsulated by the protection layer.

14. The optoelectronic device of claim 1 , wherein the ionic liquid covers the active layer having been applied by a spin coating method or a pipette method.

15. The optoelectronic device of claim 1 , wherein the active layer has a shape of a square, a circle, a triangle, an ellipse, a rectangle, a hexagon, or other type of polygon.

16. A smart window comprising:

a plurality of optoelectronic devices of claim 1 ; and

a power source coupled with the plurality of optoelectronic devices, wherein the power source modulates optical properties of the plurality of optoelectronic devices.

17. An optoelectronic device comprising:

a substrate;

an electrode member disposed on the substrate, wherein the electrode member comprises a first electrode and a second electrode;

an active layer located between the first electrode and the second electrode; and

an ionic liquid covering the active layer,

wherein the electrode member further comprises a third electrode disposed on the substrate, and wherein the first electrode is electrically isolated from the active layer and functions as a gate electrode, the second electrode is electrically connected with the active layer and functions as a drain electrode, and the third electrode is electrically connected with the active layer and functions as a source electrode.

18. The optoelectronic device of claim 17 , wherein the third electrode is disposed on the same surface of the substrate with the first electrode and the second electrode.

19. A smart window comprising:

a plurality of optoelectronic devices of claim 17 ; and

a power source coupled with the plurality of optoelectronic devices, wherein the power source modulates optical properties of the plurality of optoelectronic devices.

20. The optoelectronic device of claim 17 , wherein the active layer comprises a chalcogenide nanoplate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2017
From: HAN, SEUNGHOON; LIU, YANPING; YAO, JIE; TOM, KYLE
To: SAMSUNG ELECTRONICS CO., LTD.; THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Reel/Frame 041464/0017 →
Priority Claims (1)
KR 10-2016-0166884 · Dec 8, 2016 · national
Continuity (2)
Provisional Application 62265816 · Dec 10, 2015
Related Publication 20170168327A1 · Jun 15, 2017