Image reversal with AHM gap fill for multiple patterning
Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication.
1. A semiconductor processing tool, comprising:
one or more process chambers;
one or more gas inlets into the one or more process chambers and associated flow-control hardware;
a low frequency radio frequency (LFRF) generator;
a high frequency radio frequency (HFRF) generator; and
a controller having at least one processor and a memory, wherein
the at least one processor and the memory are communicatively connected with one another,
the at least one processor is at least operatively connected with the flow-control hardware, the LFRF generator, and the HFRF generator, and
the memory stores computer-executable instructions for controlling the at least one processor to at least control the flow-control hardware, the HFRF generator, and the LFRF generator to:
etch a semiconductor substrate to transfer a pattern from an overlying photoresist to a core amorphous carbon layer on the semiconductor substrate;
deposit a conformal film over the patterned core amorphous carbon layer on the semiconductor substrate;
deposit a gap-fill amorphous carbon layer over the conformal film;
planarize the semiconductor substrate with a process that etches both the conformal film and the gap-fill amorphous carbon layer to remove the conformal film overlying the core amorphous carbon layer without removing the conformal film deposited between the core amorphous carbon layer and the gap-fill amorphous carbon layer; and
selectively etch the conformal film to form a mask.
2. The tool of claim 1 , wherein the computer-executable instructions further include instructions for flowing oxygen and helium at about 20 sccm and about 200 sccm respectively in the planarization process.
3. The tool of claim 2 , wherein the computer-executable instructions further include instructions for flowing CF 4 and Ar at about 5 sccm and about 100 sccm, respectively; and
flowing CHF 3 and CF 4 at about 15 sccm and about 80 sccm, respectively in the planarization process.
4. The tool of claim 3 , wherein the computer-executable instructions further include instructions for flowing oxygen and helium for about 30 seconds, flowing CF 4 and Ar for about 10 seconds, and flowing CHF 3 and CF 4 for about 30 seconds.
5. The tool of claim 1 , wherein the computer-executable instructions further include setting the temperature of a pedestal holding the semiconductor substrate in the one or more process chambers to between about 10° C. and about 50° C. and setting the pressure of the one or more process chambers to between about 2 Torr and about 20 Torr.
6. The tool of claim 1 , wherein the computer-executable instructions for depositing a gap-fill amorphous carbon layer further comprises instructions for
(a) flowing a hydrocarbon using plasma enhanced chemical vapor deposition until a gap entry width between features in the pattern is reduced,
(b) directionally sputtering ions generated from a plasma to anisotropically etch the semiconductor substrate with a dominant anisotropic axis substantially perpendicular to the semiconductor substrate,
(c) repeating X cycles of (a) and (b), wherein X is a positive integer, and
(d) ashing the semiconductor substrate to remove localized build-up of carbon film on a surface of the semiconductor substrate.
7. The tool of claim 6 , wherein the hydrocarbon is selected from the group consisting of methane, acetylene, and propylene.
8. The tool of claim 1 , wherein the computer-executable instructions further include instructions for etching a target layer using a mask.
9. The tool of claim 1 , wherein the computer-executable instructions further include instructions for prior to etching etch the semiconductor substrate to transfer the pattern from an overlying photoresist to the core amorphous carbon layer, transferring the pattern from an overlying photoresist to a bottom anti-reflective layer and cap layer simultaneously by pulsing power.
10. A semiconductor processing tool comprising:
one or more process chambers;
one or more gas inlets into the process chambers and associated flow-control hardware;
a low frequency radio frequency (LFRF) generator;
a high frequency radio frequency (HFRF) generator; and
a controller having at least one processor and a memory, wherein
the at least one processor and the memory are communicatively connected with one another,
the at least one processor is at least operatively connected with the flow-control hardware, the LFRF generator, and the HFRF generator, and
the memory stores computer-executable instructions for controlling the at least one processor to at least control the flow-control hardware, the HFRF generator, and the LFRF generator to:
etch a semiconductor substrate in a first dimension to transfer a pattern from a first overlying photoresist to a core first amorphous carbon layer;
flow first conformal film material on the semiconductor substrate to form a first conformal film over the patterned core first amorphous carbon layer;
flow a first hydrocarbon to deposit a gap-fill second amorphous carbon layer over the first conformal film;
selectively etch the second amorphous carbon layer and first amorphous carbon layer to expose the patterned first conformal film;
etch an underlying etch stop layer using the patterned first conformal film;
flow a second hydrocarbon to deposit a third amorphous carbon layer over the etch stop layer;
deposit and lithographically define a second photoresist in a second dimension on the third amorphous carbon layer;
flow second conformal film material to form a second conformal film on the second patterned photoresist;
selectively etch the second conformal film to expose the second patterned photoresist;
selectively etch the third amorphous carbon layer selectively; and
selectively etch an underlying cap layer to form a two-dimensional mask.
11. The tool of claim 10 , wherein the computer-executable instructions further comprise instructions for controlling the at least one processor to at least control the flow-control hardware, the HFRF generator, and the LFRF generator to: deposit and lithographically define a third photoresist on the second amorphous carbon layer to form a block mask and etch the second amorphous carbon layer selectively using the block mask.
12. The tool of claim 10 , wherein the computer-executable instructions for flowing a hydrocarbon to deposit a third amorphous carbon layer further comprises instructions for
(a) flowing a hydrocarbon using plasma enhanced chemical vapor deposition until a gap entry width between features in the pattern is reduced,
(b) directionally sputtering ions generated from a plasma to anisotropically etch the semiconductor substrate with a dominant anisotropic axis substantially perpendicular to the semiconductor substrate,
(c) repeating X cycles of (a) and (b), wherein X is a positive integer, and
(d) ashing the semiconductor substrate to remove localized build-up of carbon film on a surface of the semiconductor substrate.
13. The tool of claim 12 , wherein the hydrocarbon is selected from the group consisting of methane, acetylene, and propylene.
14. The tool of claim 10 , wherein the second pattern further comprises features with aspect ratios between about 1:1 and about 5:1.
15. The tool of claim 10 , wherein the computer-executable instructions further comprise instructions for patterning a target layer with the two-dimensional mask.
16. The tool of claim 10 , wherein the computer-executable instructions for flowing the second conformal film material further comprises instructions for setting the temperature of a pedestal holding the semiconductor substrate to a temperature less than about 80° C.