Wiring board and semiconductor device
A wiring board includes: a first insulating layer; a first wiring layer formed on a lower surface of the first insulating layer; a first through hole which penetrates the first insulating layer; a first via wiring including: a filling portion formed to fill the first through hole; and a protruding portion protruding upward from an upper surface of the first insulating layer; a second wiring layer including a land, wherein the land includes an outer circumferential portion and a central portion, a second insulating layer formed on the upper surface of the first insulating layer; a second through hole which penetrates the second insulating layer in the thickness direction; a second via wiring formed to fill the second through hole; and a third wiring layer formed on an upper surface of the second insulating layer.
1. A wiring board comprising:
a first insulating layer;
a first wiring layer formed on a lower surface of the first insulating layer;
a first through hole which penetrates the first insulating layer in a thickness direction of the first insulating layer;
a first via wiring comprising:
a filling portion formed to fill the first through hole and connected to the first wiring layer; and
a protruding portion protruding upward from an upper surface of the first insulating layer;
a second wiring layer comprising a land, wherein the land comprises:
an outer circumferential portion covering the upper surface of the first insulating layer; and
a central portion formed integrally with the outer circumferential portion to cover a side surface and an upper surface of the protruding portion and protruding upward from an upper surface of the outer circumferential portion,
a second insulating layer formed on the upper surface of the first insulating layer to cover the second wiring layer;
a second through hole which penetrates the second insulating layer in the thickness direction to expose a side surface and an upper surface of the central portion;
a second via wiring formed to fill the second through hole to cover the side surface and the upper surface of the central portion; and
a third wiring layer formed on an upper surface of the second insulating layer and connected to the second via wiring,
wherein
the filling portion comprises:
a first metal film covering an inner side surface of the first through hole, the first metal film including an upper end surface that is planar with the upper surface of the first insulating layer;
a second metal film covering the first metal film; and
a metal layer covering the second metal film,
the protruding portion comprises:
the metal layer protruding upward from the upper surface of the first insulating layer; and
the second metal film covering a side surface and an upper surface of the metal layer exposed from the upper surface of the first insulating layer, and
the first via wiring has a step at a boundary between the protruding portion and the filling portion, the step formed along the upper end surface of the first metal film and a side surface and an upper surface of the second metal film, the side surface and the upper surface of the second metal film being exposed from the first metal film.
2. The wiring board of claim 1 , wherein
the first through hole is formed such that a width of an opening end of the first through hole opposed to the second wiring layer is smaller than a width of an opening end of the first through hole opposed to the first wiring layer, and
the second through hole is formed such that a width of an opening end of the second through hole opposed to the second wiring layer is smaller than a width of an opening end of the second through hole opposed to the third wiring layer.
3. The wiring board of claim 1 , wherein
a thickness of the first insulating layer is greater than that of the second insulating layer.
4. The wiring board of claim 1 , wherein
the second wiring layer comprises:
a metal film covering the upper surface of the first insulating layer and the side surface and the upper surface of the protruding portion; and
a metal layer formed on the metal film.
5. The wiring board of claim 1 , wherein
the second via wiring comprises:
a metal film covering an inner side surface of the second through hole and the side surface and the upper surface of the central portion exposed in the second through hole
a metal layer covering the metal film.
6. A semiconductor device comprising:
the wiring board of claim 1 ; and
an electronic component connected to the third wiring layer.