Silicon-containing resists underlayer film-forming composition having phenyl group-containing chromophore

1. A resist underlayer film-forming composition for lithography, the composition comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein

the hydrolyzable silane is a combination of a hydrolyzable silane of Formula (1) and another hydrolyzable silane:

R 1 a R 2 b Si(R 3 ) 4−(a+b)   Formula (1)

wherein R 1 is an organic group of Formula (2):

wherein

each of X and Y is an oxygen atom or a sulfur atom, provided that X and Y are not the same atom at the same time;

R 6 is an optionally substituted C 1-10 alkyl group;

R 4 is an optionally substituted C 1-10 alkylene group;

R 5 is an optionally substituted C 1-10 alkyl group; and

n is an integer of 0 to 4, and

R 1 is bonded to the silicon atom of Formula (1) through a Si—C bond;

R 2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, and is bonded to the silicon atom through a Si—C bond;

R 3 is an alkoxy group, an acyloxy group, or a halogen group;

a is an integer of 1;

b is an integer of 0 to 2;

a+b is an integer of 1 to 3,

the other hydrolyzable silane is at least one hydrolyzable silane selected from the group consisting of a hydrolyzable silane of Formula (3):

R 7 c Si(R 8 ) 4−c   Formula (3)

wherein R 7 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, or a cyano group, and is bonded to the silicon atom of Formula (3) through a Si—C bond;

R 8 is an alkoxy group, an acyloxy group, or a halogen group; and

c is an integer of 0 to 3, and

a hydrolyzable silane of Formula (4):

[R 9 d Si(R 10 ) 3−d ] 2 Y R e   Formula (4)

wherein R 9 is an alkyl group and is bonded to the silicon atom of Formula (4) through a Si—C bond;

R 10 is an alkoxy group, an acyloxy group, or a halogen group;

Y R is an alkylene group or an arylene group;

d is an integer of 0 or 1; and

e is an integer of 0 or 1), and

a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.

2. The resist underlayer film-forming composition for lithography according to claim 1 , wherein the ratio of sulfur atoms to silicon atoms is 7% by mole to 50% by mole in the whole of the silane.

3. The resist underlayer film-forming composition according to claim 1 , the composition comprising, as an underlayer film-forming polymer, a hydrolysis-condensation product of a hydrolyzable silane comprising a combination of the hydrolyzable silane of Formula (1) and the hydrolyzable silane of Formula (3).

4. The resist underlayer film-forming composition according to claim 1 , further comprising an acid as a hydrolysis catalyst.

5. The resist underlayer film-forming composition according to claim 1 , further comprising water.

6. A resist underlayer film obtained by applying the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate and baking the applied resist underlayer film-forming composition.

7. A method for manufacturing a semiconductor device, the method comprising:

applying the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate, and baking the applied resist underlayer film-forming composition to form a resist underlayer film;

applying a resist composition onto the underlayer film to form a resist film;

exposing the resist film to light;

developing the resist after the exposure to obtain a resist pattern;

etching the resist underlayer film with the resist pattern; and

processing the semiconductor substrate with the patterned resist underlayer film.

8. A method for manufacturing a semiconductor device, the method comprising:

forming an organic underlayer film on a semiconductor substrate;

applying the resist underlayer film-forming composition as claimed in claim 1 onto the organic underlayer film, and baking the applied resist underlayer film-forming composition to form a resist underlayer film;

applying a resist composition onto the resist underlayer film to form a resist film;

exposing the resist film to light;

developing the resist after the exposure to obtain a resist pattern;

etching the resist underlayer film with the resist pattern;

etching the organic underlayer film with the patterned resist underlayer film; and

processing the semiconductor substrate with the patterned organic underlayer film.

9. A resist underlayer film-forming composition for lithography, the composition comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein

the hydrolyzable silane comprises a hydrolyzable silane of Formula (1):

R 1 a R 2 b Si(R 3 ) 4−(a+b)   Formula (1)

wherein R 1 is an organic group of Formula (2):

wherein

each of X and Y is an oxygen atom or a sulfur atom, provided that X and Y are not the same atom at the same time;

R 6 is an optionally substituted C 1-10 alkyl group;

R 4 is an optionally substituted C 1-10 alkylene group;

R 5 is an optionally substituted C 1-10 alkyl group; and

n is an integer of 0 to 4, and

R 1 is bonded to the silicon atom of Formula (1) through a Si—C bond;

R 2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, and is bonded to the silicon atom through a Si—C bond;

R 3 is an alkoxy group, an acyloxy group, or a halogen group;

a is an integer of 1;

b is an integer of 0 to 2; and

a+b is an integer of 1 to 3, and

a ratio of sulfur atoms to silicon atoms is 7% by mole or to 50% by mole in the whole of the silane.

10. A resist underlayer film-forming composition for lithography, the composition comprising:

water; and

as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein

the hydrolyzable silane comprises a hydrolyzable silane of Formula (1):

R 1 a R 2 b Si(R 3 ) 4−(a+b)   Formula (1)

wherein R 1 is an organic group of Formula (2):

wherein

each of X and Y is an oxygen atom or a sulfur atom, provided that X and Y are not the same atom at the same time;

R 6 is an optionally substituted C 1-10 alkyl group;

R 4 is an optionally substituted C 1-10 alkylene group;

R 5 is an optionally substituted C 1-10 alkyl group; and

n is an integer of 0 to 4, and

R 1 is bonded to the silicon atom of Formula (1) through a Si—C bond;

R 2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, and is bonded to the silicon atom through a Si—C bond;

R 3 is an alkoxy group, an acyloxy group, or a halogen group;

a is an integer of 1;

b is an integer of 0 to 2; and

a+b is an integer of 1 to 3, and

a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.