Semiconductor structure and fabrication method thereof

1. A method for fabricating a semiconductor structure, comprising:

providing a base substrate having an N-type logic region including a first N-type threshold voltage region and a second N-type threshold voltage region, a P-type logic region including a first P-type threshold voltage region and a second P-type threshold voltage region, a pull-up transistor region and a pull-down transistor region adjacent to the pull-up transistor region;

forming a gate dielectric layer on portions of the base substrate in the N-type logic region, the P-type logic region, the pull-up transistor region and the pull-down transistor region;

forming a first work function layer on the gate dielectric layer;

removing portions of the first work function layer in the N-type logic region, the pull-up transistor region and the second P-type threshold voltage region;

forming a second work function layer on remaining first work function layer and exposed portions of the gate dielectric layer;

removing a portion of the second work function layer in the second N-type threshold voltage region;

forming an N-type work function layer on remaining second work function layer and exposed portions of the gate dielectric layer in the second N-type threshold voltage region; and

forming a gate electrode layer on the N-type work function layer, wherein forming the second work function layer on the remaining first work function layer and the exposed portion of the gate dielectric layer and removing the portion of the second work function layer in the second N-type threshold voltage region comprise: forming a first second-work function material layer on the remaining first work function layer and the exposed portions of the gate dielectric layer;

removing a portion of the first second-work function material layer in the second N-type threshold voltage region to expose a portion of the gate electrode layer in the N-type threshold voltage region;

forming a second second-work function material layer on remaining first second-work function material layer and a portion of the gate dielectric layer in the second N-type threshold voltage region, the remaining first second-work function material layer and the second second-work function material layer forming the second work function layer; and removing a portion of the second second-work function material layer in the second N-type threshold voltage region.

2. The method according to claim 1 , wherein:

the first work function layer, the first second-work function material layer and the second second-work function material layer are made of TiN;

a thickness of the first work function layer is in a range of approximately 15 Å-35 Å;

a thickness of the first second-work function material layer is in a range of approximately 10 Å-30 Å; and

a thickness of the second second-work function material layer is in a range of approximately 10 Å-30 Å.

3. The method according to claim 1 , after forming the first second-work function material layer on the remaining first work function layer and the exposed portions of the gate dielectric layer and before removing the first second-work function material layer in the N-type threshold voltage, further comprising:

forming a barrier layer on the first second-work function material layer; and

removing a portion of the barrier layer in the second N-type threshold voltage region,

wherein:

the second second-work function material is formed on remaining barrier layer; and

the first second-work function material layer, the barrier layer and the second second-work function material layer are used to form the second work function layer.

4. The method according to claim 3 , wherein:

the barrier layer is made of one of TaN, TiSiN, and TaSiN.

5. The method according to claim 3 , wherein:

a thickness of the barrier layer is in range of approximately 5 Å-15 Å.

6. The method according to claim 1 , wherein the base structure has a transfer gate transistor region, wherein:

the gate dielectric layer is also formed on a portion of the base substrate in the transfer gate transistor region during a process for forming gate dielectric layer on portions of the base substrate in the N-type logic region, the P-type logic region, the pull-up transistor region and the pull-down transistor region;

the first work function layer is also formed on a portion of the gate dielectric layer in the transfer gate transistor region during a process for forming the first work function layer on the gate dielectric layer;

a portion of the first work function layer in the transfer gate transistor region is also removed during a process for removing portions of the first work function layer in the N-type logic region, the pull-down transistor region and the second P-type threshold voltage region;

the second second-work function material layer is also formed on a portion of the gate dielectric layer in the transfer gate transistor region during a process for forming the second second-work function material layer on remaining first work function layer and the portion of the gate dielectric layer in the second N-type threshold voltage region; and

the N-type work function layer is also formed on a portion of the second second-work function material layer in the transfer gate transistor region during the process for forming the N-type work function layer on remaining second work function layer and a portion of the gate dielectric layer in the second N-type threshold voltage region.

7. The method according to claim 1 , wherein:

the N-type work function layer is made of TiAlC; and

the thickness of the N-type work function layer is in a range of approximately 20 Å-80 Å.

8. The method according to claim 1 , after forming the gate dielectric layer on the portions of the base substrate in the N-type logic region, the P-type logic region, the pull-up transistor region and the pull-down transistor region and before forming the first work function layer, further comprising:

performing a thermal annealing process on the base substrate.

9. The method according to claim 1 , wherein:

the base substrate is used to form fin field-effect transistors;

the base substrate includes a semiconductor substrate and a plurality of fins on the semiconductor substrate; and

the dielectric layer is across the plurality of fins by covering side and top surfaces of the plurality of fins.