VNAND tensile thick TEOS oxide
Embodiments of the present disclosure generally relate to an improved method for forming a dielectric film stack used for inter-level dielectric (ILD) layers in a 3D NAND structure. In one embodiment, the method comprises providing a substrate having a gate stack deposited thereon, forming on exposed surfaces of the gate stack a first oxide layer using a first RF power and a first process gas comprising a TEOS gas and a first oxygen-containing gas, and forming over the first oxide layer a second oxide layer using a second RF power and a second process gas comprising a silane gas and a second oxygen-containing gas.
1. A method for processing a substrate, comprising:
positioning a substrate having a gate stack deposited thereon, the gate stack comprising a plurality of oxide layers and a plurality of nitride layers disposed alternatingly in a vertical arrangement perpendicular to a top surface of the substrate, and the gate stack having a staircase cross section;
forming on exposed surfaces of the gate stack a first oxide layer using a first RF power of about 150 W and a first process gas comprising a TEOS gas and a first oxygen-containing gas;
after the first oxide layer has reached a predetermined thickness, ramping up the first RF power to form an initiation layer of oxide over the first oxide layer;
after the initiation layer has reached a predetermined thickness, ramping up the RF power used to form the initiation layer while gradually decreasing the flow of the TEOS gas to form a transition layer of oxide on the initiation layer; and then
forming a second oxide layer over the transition layer using a second RF power that is different from the first RF power and a second process gas comprising a silane gas and a second oxygen-containing gas.
2. The method of claim 1 , wherein each of the first and second oxygen-containing gases comprises O 2 or N 2 O.
3. The method of claim 1 , wherein the first oxygen-containing gas and the TEOS gas are provided at first oxygen-containing gas:TEOS gas ratio of about 2:1 to about 6:1.
4. The method of claim 1 , wherein the first process gas further comprises a P-type or N-type dopant gas.
5. The method of claim 1 , wherein the first oxide layer has a tensile stress of about 80 MPa to about 300 MPa.
6. The method of claim 1 , wherein the first oxide layer has a thickness of about 10000 angstroms to about 30000 angstroms, and the second oxide layer has a thickness of about 8000 angstroms to about 15000 angstroms.
7. The method of claim 1 , further comprising:
after forming the second oxide layer, subjecting the substrate to a thermal anneal treatment in a nitrogen rich environment at a temperature of about 700° C. to about 850° C.
8. The method of claim 1 , wherein the initiation layer is formed by ramping up the first RF power from about 150 W to about 200 W.
9. The method of claim 8 , wherein the transition layer is formed by ramping up the RF power used to form the initiation layer from about 200 W to about 400 W.
10. A method for processing a substrate, comprising:
positioning a substrate having a gate stack deposited thereon;
forming a first oxide layer conformally on exposed surfaces of the gate stack using a first RF power of about 150 W and a first process gas comprising a TEOS gas and a first oxygen-containing gas;
after the first oxide layer has reached a predetermined thickness, ramping up the first RF power while continuing the flow of the TEOS gas and the first oxygen-containing gas to form an initiation layer of oxide over the first oxide layer;
after the initiation layer has reached a predetermined thickness, increasing the RF power used to form the initiation layer while gradually decreasing the flow of the TEOS gas to form a transition layer of oxide on the initiation layer; and then
forming a second oxide layer conformally over the transition layer using a second RF power that is different from the first RF power and a second process gas comprising a silane gas and a second oxygen-containing gas.