High voltage withstand Ga2O3-based single crystal schottky barrier diode
A high withstand voltage Schottky barrier diode includes a first layer that includes a first Ga 2 O 3 -based single crystal including a first Group IV element and Cl at a concentration of not more than 5×10 16 cm −3 and that has an effective donor concentration of not less than 1×10 13 and not more than 6.0×10 17 cm −3 , a second layer that includes a second Ga 2 O 3 -based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.
1. A high withstand voltage Schottky barrier diode, comprising:
a first layer that comprises a first Ga 2 O 3 -based single crystal including a first Group IV element and Cl at a concentration of not more than 5×10 16 cm −3 and that has an effective donor concentration of not less than 1×10 13 and not more than 6.0×10 17 cm −3 ;
a second layer that comprises a second Ga 2 O 3 -based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer;
an anode electrode formed on the first layer; and
a cathode electrode formed on the second layer.
2. The high withstand voltage Schottky barrier diode according to claim 1 , wherein the effective donor concentration of the first layer is not more than 2.0×10 16 cm −3 .
3. The high withstand voltage Schottky barrier diode according to claim 2 , wherein the effective donor concentration of the first layer is not more than 1.4×10 16 cm −3 .
4. The high withstand voltage Schottky barrier diode according to claim 3 , wherein the first Group IV element comprises Si.
5. The high withstand voltage Schottky barrier diode according to claim 3 , wherein the first Ga 2 O 3 -based single crystal comprises a Ga 2 O 3 single crystal.
6. The high withstand voltage Schottky barrier diode according to claim 3 , wherein a layer of the cathode electrode contacts with the second layer and comprises Ti.
7. The high withstand voltage Schottky barrier diode according to claim 2 , wherein the first Group IV element comprises Si.
8. The high withstand voltage Schottky barrier diode according to claim 2 , wherein the first Ga 2 O 3 -based single crystal comprises a Ga 2 O 3 single crystal.
9. The high withstand voltage Schottky barrier diode according to claim 2 , wherein a layer of the cathode electrode contacts with the second layer and comprises Ti.
10. The high withstand voltage Schottky barrier diode according to claim 1 , wherein the first Group IV element comprises Si.
11. The high withstand voltage Schottky barrier diode according to claim 1 , wherein the first Ga 2 O 3 -based single crystal comprises a Ga 2 O 3 single crystal.
12. The high withstand voltage Schottky barrier diode according to claim 1 , wherein a layer of the cathode electrode contacts with the second layer and comprises Ti.