Vertical double diffusion metal-oxide-semiconductor power device
A vertical double diffusion metal-oxide-semiconductor power device with thermal sensitivity unit includes a vertical double diffusion metal-oxide-semiconductor power transistor and at least one thermal sensitivity unit. The vertical double diffusion metal-oxide-semiconductor power transistor includes a first metal layer, a substrate layer, an epitaxy layer, a second metal layer, and a plurality of first polysilicon layers, wherein each first polysilicon layer of the plurality of first polysilicon layers corresponds to a first oxide layer, a first doping well and a second doping well with second conductivity type, a first doped region and a second doped region with first conductivity type, and a second oxide layer. The at least one thermal sensitivity unit is used for detecting a temperature when the vertical double diffusion metal-oxide-semiconductor power transistor operates, and the vertical double diffusion metal-oxide-semiconductor power transistor and the at least one thermal sensitivity unit share a same process.
1. A vertical double diffused metal-oxide-semiconductor (VDMOS) power device with thermal sensitivity unit, comprising:
a VDMOS power transistor, comprising:
a first metal layer;
a substrate layer with first conductivity type formed on the first metal layer;
an epitaxy layer with first conductivity type formed on the substrate layer;
a second metal layer; and
a plurality of first polysilicon layers, wherein each first polysilicon layer of the plurality of first polysilicon layers corresponds to a first oxide layer, a first doping well and a second doping well with second conductivity type, a first doped region and a second doped region with first conductivity type, and a second oxide layer, wherein the first oxide layer is formed on the epitaxy layer, the first doping well and the second doping well are formed within the epitaxy layer, the first doped region and the second doped region are formed within the first doping well and the second doping well respectively, the each first polysilicon layer is formed on the first oxide layer, the second oxide layer covers the each first polysilicon layer, and the second metal layer is formed on the first doping well, the second doping well, the first doped region, the second doped region, and the second oxide layer; and
at least one thermal sensitivity unit formed on the epitaxy layer, wherein the at least one thermal sensitivity unit is used for detecting a temperature of the VDMOS power transistor when the VDMOS power transistor operates, and the VDMOS power transistor and the at least one thermal sensitivity unit share a same process, wherein each thermal sensitivity unit of the at least one thermal sensitivity unit comprises:
a second polysilicon layer formed on a third oxide layer; and
a doped region formed within the second polysilicon layer;
wherein the third oxide layer is formed on a deep doping well with second conductivity type, and the deep doping well is formed within the epitaxy layer.
2. The VDMOS power device of claim 1 , further comprising:
an isolation region, wherein the deep doping well and the isolation region share a mask.
3. The VDMOS power device of claim 1 , wherein the substrate layer, the epitaxy layer, the first doping well, the second doping well, the first doped region, the second doped region, the deep doping well, and the doped region are formed through an ion implantation method.
4. A vertical double diffused metal-oxide-semiconductor (VDMOS) power device with thermal sensitivity unit, comprising:
a VDMOS power transistor, comprising:
a first metal layer;
a substrate layer with first conductivity type formed on the first metal layer;
an epitaxy layer with first conductivity type formed on the substrate layer;
a second metal layer; and
a plurality of first polysilicon layers, wherein each first polysilicon layer of the plurality of first polysilicon layers corresponds to a first oxide layer, a first doping well and a second doping well with second conductivity type, a first doped region and a second doped region with first conductivity type, and a second oxide layer, wherein the first oxide layer is formed on the epitaxy layer, the first doping well and the second doping well are formed within the epitaxy layer, the first doped region and the second doped region are formed within the first doping well and the second doping well respectively, the each first polysilicon layer is formed on the first oxide layer, the second oxide layer covers the each first polysilicon layer, and the second metal layer is formed on the first doping well, the second doping well, the first doped region, the second doped region, and the second oxide layer; and
at least one thermal sensitivity unit formed on the epitaxy layer, wherein the at least one thermal sensitivity unit is used for detecting a temperature of the VDMOS power transistor when the VDMOS power transistor operates, and the VDMOS power transistor and the at least one thermal sensitivity unit share a same process, wherein each thermal sensitivity unit of the at least one thermal sensitivity unit comprises:
a second polysilicon layer formed on a field oxide layer; and
a doped region formed within the second polysilicon layer;
wherein the field oxide layer is formed on a deep doping well with second conductivity type, and the deep doping well is formed within the epitaxy layer.
5. The VDMOS power device of claim 4 , wherein the field oxide layer is formed through a Local Oxidation of Silicon (LOCOS) method.
6. The VDMOS power device of claim 4 , wherein the substrate layer, the epitaxy layer, the first doping well, the second doping well, the first doped region, the second doped region, the deep doping well, and the doped region are formed through an ion implantation method.
7. The VDMOS power device of claim 4 , wherein the first metal layer is a drain of the VDMOS power transistor, the plurality of first polysilicon layers is a gate of the VDMOS power transistor, and the second metal layer is a source of the VDMOS power transistor.
8. The VDMOS power device of claim 4 , wherein the first conductivity type is N type and the second conductivity type is P type.
9. The VDMOS power device of claim 4 , wherein ion concentration of the substrate layer is greater than ion concentration of the epitaxy layer.
10. The VDMOS power device of claim 4 , wherein the first doping well and the second doping well are formed by a self-align method according to the each first polysilicon layer.