Photodiode device and manufacturing method thereof
View Patent ↗The present disclosure provides a photodiode device, which includes a semiconductor substrate, a well region in the semiconductor substrate of a first dopant type, a first doped region of the first dopant type in the well region, and a second doped region of a second dopant type disposed in the well region and over the first doped region. The second doped region comprises first recesses exposed through a surface of the second doped region, and a first portion of the second doped region on the surface comprises a first doping concentration of the second dopant type greater than a second doping concentration of a second portion of the second doped region away from the first recesses.
1. A photodiode device, comprising:
a semiconductor substrate;
a well region in the semiconductor substrate of a first dopant type;
a first doped region of the first dopant type in the well region;
a plurality of contact vias; and
a second doped region of a second dopant type disposed in the well region and over the first doped region, the second doped region comprising first recesses exposed through a surface of the second doped region,
wherein a first portion of the second doped region on the surface comprises a first doping concentration of the second dopant type greater than a second doping concentration of a second portion of the second doped region away from the first recesses, and
wherein the second doped region is partitioned into a grid of pads from a top view by the first recesses, the plurality of conductive vias being correspondingly coupled to each of the pads.
2. The photodiode device of claim 1 , wherein the first portion of the second doped region covers an entirety of a sidewall of each of the first recesses.
3. The photodiode device of claim 1 , wherein the first portion of the second doped region extends below a bottom of each of the first recesses.
4. The photodiode device of claim 1 , further comprising a dielectric material filling the first recesses.
5. The photodiode device of claim 1 , wherein the first doping concentration is between about 1E19 and about 2E20 atoms/cm 3 .
6. The photodiode device of claim 1 , further comprising a fourth doped region of the first dopant type in the well region, the fourth doped region being electrically coupled to an anode terminal.
7. The photodiode device of claim 1 , wherein each of the first recesses further comprises a bottom surface in the second doped region.
8. The photodiode device of claim 1 , further comprising a dielectric layer over the second doped region and surrounding the plurality of contact vias.
9. The photodiode device of claim 1 , wherein the first recesses comprise staggered sidewalls meeting one another.
10. The photodiode device of claim 1 , wherein the first portion contacts the first doped region.
11. The photodiode device of claim 1 , further comprising second recesses on a surface of the semiconductor substrate opposite the second doped region.
12. A photodiode device, comprising:
a semiconductor substrate of a first dopant type;
a well region of a second dopant type disposed in the semiconductor substrate;
a first doped region of the second dopant type disposed in the well region;
a second doped region of the first dopant type disposed in the well region and over the first doped region;
a third doped region of the first dopant type disposed in the second doped region, the third doped region comprising recesses; and
a plurality of contact vias,
wherein the third doped region comprises a doping concentration greater than a doping concentration of the second doped region and covers at least a top portion of each of the recesses,
wherein the third doped region comprises a pattern of an array of pads from a top view separated by the recesses, and the plurality of contact vias are correspondingly coupled to each of the pads.
13. The photodiode device of claim 12 , further comprising an isolation structure surrounding the well region, the recesses having a depth substantially equal to a depth of the isolation structure.
14. The photodiode device of claim 13 , wherein the recesses are filled with a material that is the same as a material of the isolation structure.
15. The photodiode device of claim 12 , wherein the second doped region separates the recesses and the third doped region from the first doped region.
16. The photodiode device of claim 12 , further comprising a dielectric layer over the second doped region and the third doped region, the dielectric layer filling the recesses.
17. A photodiode device, comprising:
a well region of a first dopant type;
a first doped region of the first dopant type disposed in the well region;
a plurality of contact vias; and
a second doped region of a second dopant type disposed over the first doped region, a surface of the second doped region comprising anti-reflection structures,
wherein the second doped region comprises a first portion including the anti-reflection structures and having a first doping concentration greater than a second doping concentration of a second portion of the second doped region adjacent to the first doped region, and
wherein the second doped region comprises a pattern of an array of pads from a top view separated by the anti-reflection structures, the plurality of conductive vias being correspondingly coupled to each of the pads.
18. The photodiode device according to claim 17 , wherein the first doping concentration is greater than a third doping concentration of a third portion of the second doped region adjacent to the well region.
19. The photodiode device according to claim 17 , further comprising an inter-layer dielectric covering the anti-reflection structures and the well region.
20. The photodiode device according to claim 19 , further comprising a conductive via extending through the inter-layer dielectric and contacting the first portion of the second doped region.