Semiconductor device and method of manufacturing the same
According to one embodiment, a semiconductor device includes a first semiconductor circuit layer including a first conductive layer, a second semiconductor circuit layer including a second conductive layer, and a third semiconductor circuit layer between the first semiconductor circuit layer and the second semiconductor circuit layer, the third semiconductor circuit layer including a third conductive layer in contact with the first conductive layer, a fourth conductive layer in contact with the second conductive layer, and a fifth conductive layer in contact with the third conductive layer and electrically connected to the fourth conductive layer. The fifth conductive layer has a width that is narrower than a width of the third conductive layer.
1. A semiconductor device, comprising:
a first semiconductor circuit layer including a first conductive layer;
a second semiconductor circuit layer including a second conductive layer;
a third semiconductor circuit layer between the first semiconductor circuit layer and the second semiconductor circuit layer, the third semiconductor circuit layer including a third conductive layer in contact with the first conductive layer, a fourth conductive layer in contact with the second conductive layer, and a fifth conductive layer in contact with the third conductive layer and electrically connected to the fourth conductive layer; and
a memory cell array in the third semiconductor circuit layer, the memory cell array including a plurality of memory cells that is three-dimensionally arranged and being electrically connectable to another memory cell array in the first semiconductor circuit layer, wherein
the fifth conductive layer has a width that is narrower than a width of the third conductive layer.
2. The semiconductor device according to claim 1 , wherein
the third conductive layer comprises a first material,
the fifth conductive layer comprises a second material, and
the first material and the second material are different from each other.
3. The semiconductor device according to claim 1 , wherein
the first conductive layer, the second conductive layer, the third conductive layer, and the fourth conductive layer each comprises copper, and
the fifth conductive layer comprises tungsten.
4. The semiconductor device according to claim 1 , wherein the fifth conductive layer comprises a metal nitride film in contact with the third conductive layer.
5. The semiconductor device according to claim 1 , further comprising:
a peripheral circuit for controlling the memory cell array in the second semiconductor circuit layer.
6. The semiconductor device according to claim 1 , further comprising:
an insulating layer between the third conductive layer and the memory cell array and including nitrogen.
7. The semiconductor device according to claim 1 , further comprising:
a metal-insulator-semiconductor field effect transistor (MISFET) in the second semiconductor circuit layer.
8. The semiconductor device according to claim 1 , further comprising:
a polycrystalline semiconductor layer in the first semiconductor circuit layer and including silicon; and
a sixth conductive layer between the first conductive layer and the polycrystalline semiconductor layer, the six conductive layer in contact with the polycrystalline semiconductor layer and electrically connected to the first conductive layer, wherein
a width of the sixth conductive layer is narrower than a width of the polycrystalline semiconductor layer.
9. The semiconductor device according to claim 1 , further comprising:
a plurality of memory cell arrays in the third semiconductor circuit layer, each memory cell array comprising a plurality of memory cells three-dimensionally arranged; and
a plurality of fifth conductive layers, each fifth conductive layer being between two adjacent memory cell arrays in the plurality of memory cell arrays.
10. A method of manufacturing a semiconductor device, comprising:
bonding a first semiconductor circuit substrate to a second semiconductor circuit substrate, wherein
the first semiconductor circuit substrate includes a semiconductor substrate, an insulating layer on the semiconductor substrate, a sacrificial layer on the insulating layer, a first conductive layer on a first surface of the first semiconductor circuit substrate opposite the semiconductor substrate, and a second conductive layer contacting the sacrificial layer and electrically connected to the first conductive layer,
the second semiconductor circuit substrate includes a third conductive layer on a second surface thereof, and
the first semiconductor circuit substrate is bonded to the second semiconductor circuit substrate such that the first conductive layer is in contact with the third conductive layer;
removing the semiconductor substrate and the insulating layer so as to expose the sacrificial layer;
removing the sacrificial layer so as to form an opening exposing the first conductive layer;
forming a fourth conductive layer in the opening; and
bonding the first semiconductor circuit substrate to a third semiconductor circuit substrate, wherein
the third semiconductor circuit substrate includes a fifth conductive layer on a third surface thereof, and
the third semiconductor circuit substrate is bonded to the first semiconductor circuit substrate such that the fourth conductive layer is in contact with the fifth conductive layer.
11. The method of manufacturing the semiconductor device according to claim 10 , wherein the sacrificial layer is a polycrystalline semiconductor including silicon.
12. The method of manufacturing the semiconductor device according to claim 10 , wherein the first conductive layer, the third conductive layer, the fourth conductive layer and the fifth conductive layer each comprises copper.
13. The method of manufacturing the semiconductor device according to claim 10 , wherein
the bonding of the second semiconductor circuit substrate to the first semiconductor circuit substrate includes a plasma treatment of at least one of the first surface and the second surface, and
the bonding of the first semiconductor circuit substrate to the third semiconductor circuit substrate includes a plasma treatment of at least one of the first surface and the third surface.
14. The method of manufacturing the semiconductor device according to claim 10 , wherein the sacrificial layer is removed by wet etching.
15. The method of manufacturing the semiconductor device according to claim 10 , wherein the fourth conductive layer is formed by a plating method.
16. The method of manufacturing the semiconductor device according to claim 10 , wherein the second conductive layer comprises tungsten.
17. The method of manufacturing the semiconductor device according to claim 10 , wherein the first semiconductor circuit substrate includes a three-dimensional memory cell array in which a plurality of memory cells is three-dimensionally arranged.
18. The method of manufacturing the semiconductor device according to claim 17 , wherein the second semiconductor circuit substrate includes a peripheral circuit of the three-dimensional memory cell array.
19. The method of manufacturing the semiconductor device according to claim 10 , wherein the second semiconductor circuit substrate includes a metal-insulator-semiconductor field effect transistor (MISFET).