Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.
1. A semiconductor device comprising:
a trench gate structure extending from a first surface into a semiconductor body,
wherein the trench gate structure fills a trench,
wherein the trench being rounded and/or chamfered along a rim section of the first surface, and
wherein, in a horizontal cross-section parallel to the first surface, the trench gate structure includes a long side, a short side and a rounded transition between the short side and the long side.
2. The semiconductor device of claim 1 , wherein the long side is a straight long side and the short side is a straight short side.
3. The semiconductor device of claim 1 , wherein the semiconductor body is of crystalline silicon carbide.
4. The semiconductor device of claim 1 , further comprising source zones in the semiconductor body, which source zones directly adjoin the trench gate structure on opposing sides of the trench.
5. The semiconductor device of claim 1 , further comprising source zones in the semiconductor body, which source zones directly adjoin the trench gate structure on only one side.
6. A semiconductor device, comprising:
a trench extending from a first surface of a semiconductor body into the semiconductor body, the semiconductor body comprising crystalline silicon carbide,
wherein the trench has a chamfered and/or substantially rounded rim with a tilted surface section and a tapering surface section,
wherein the tilted surface section and the first surface enclose a first angle and the tilted surface section and the tapering surface section enclose a second angle, the first angle being different from the second angle, and
wherein, in a horizontal cross-section parallel to the first surface, the trench includes a long side, a short side and a rounded transition between the short side and the long side.
7. The semiconductor device of claim 6 , wherein the first angle is larger than the second angle.
8. The semiconductor device of claim 6 , wherein the tapering surface section and a side wall of the trench enclose a third angle, the third angle being larger than the second angle.
9. The semiconductor device of claim 6 , wherein the tapering surface section and a side wall of the trench enclose a third angle, the first angle and the third angle being substantially equal.
10. The semiconductor device of claim 6 , wherein the trench has rounded surface sections along corners of a bottom of the trench.
11. The semiconductor device of claim 6 , wherein the trench comprises a trench gate structure.
12. A method of forming a semiconductor device, the method comprising:
forming a trench extending from a first surface of a semiconductor body into the semiconductor body, the semiconductor body comprising crystalline silicon carbide,
wherein the trench has a chamfered and/or substantially rounded rim with a tilted surface section and a tapering surface section,
wherein the tilted surface section and the first surface enclose a first angle and the tilted surface section and the tapering surface section enclose a second angle, the first angle being different from the second angle, and
wherein, in a horizontal cross-section parallel to the first surface, the trench includes a long side, a short side and a rounded transition between the short side and the long side.
13. The method of claim 12 , wherein the first angle is larger than the second angle.
14. The method of claim 12 , wherein the tapering surface section and a side wall of the trench enclose a third angle, the third angle being larger than the second angle.
15. The method of claim 12 , wherein the tapering surface section and a side wall of the trench enclose a third angle, the first angle and the third angle being substantially equal.
16. The method of claim 12 , wherein the trench has rounded surface sections along corners of a bottom of the trench.
17. The method of claim 12 , wherein forming the trench comprises forming a trench gate structure.