Semiconductor device comprising first metal oxide film and second metal oxide film
A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor. In the capacitor, a conductive film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the pixel electrode serves as the other electrode, and a nitride insulating film and a second oxide insulating film which are provided between the light-transmitting semiconductor film and the pixel electrode serve as the a dielectric film.
1. A semiconductor device comprising:
a first insulating film;
a first metal oxide film portion on and in contact with the first insulating film;
a second metal oxide film portion on and in contact with the first insulating film;
a transistor comprising the first metal oxide film portion as a channel formation region; and
a pixel electrode overlapping the second metal oxide film portion,
wherein a second insulating film is on and in direct contact with the second metal oxide film portion and overlaps the first metal oxide film portion,
wherein a third insulating film is interposed between the first metal oxide film portion and the second insulating film and overlaps the second metal oxide film portion, and
wherein a concentration in hydrogen of the second metal oxide film portion is greater than or equal to 8×10 19 atoms/cm 3 .
2. The semiconductor device according to claim 1 ,
wherein the concentration in hydrogen of the second metal oxide film portion is greater than or equal to 10 20 atoms/cm 3 .
3. The semiconductor device according to claim 1 ,
wherein the concentration in hydrogen of the second metal oxide film portion is greater than or equal to 5×10 20 atoms/cm 3 .
4. The semiconductor device according to claim 1 ,
wherein the second insulating film comprises more nitrogen than oxygen, and
wherein the third insulating film comprises more oxygen than nitrogen.
5. The semiconductor device according to claim 1 , further comprising a pixel portion,
wherein the first metal oxide film portion and the second metal oxide film portion are part of a pixel circuit localized in the pixel portion.
6. The semiconductor device according to claim 1 ,
wherein the first metal oxide film portion and the second metal oxide film portion belong to two physically separate island-shaped metal oxide films.
7. The semiconductor device according to claim 1 ,
wherein each of the first metal oxide film portion and the second metal oxide film portion contains more indium than gallium and more indium than zinc in atomic percentages.
8. The semiconductor device according to claim 1 ,
wherein an indium proportion is about equal as an addition of a gallium proportion and a zinc proportion in each of the first metal oxide film portion and the second metal oxide film portion, in atomic percentages.
9. The semiconductor device according to claim 1 ,
wherein each of the first metal oxide film portion and the second metal oxide film portion is formed from an In—Ga—Zn-based metal oxide containing In, Ga, and Zn at an atomic ratio of 3:1:2.
10. The semiconductor device according to claim 1 ,
wherein a concentration in hydrogen of the first metal oxide film portion is more than 1×10 16 atoms/cm 3 and less than 5×10 19 atoms/cm 3 .
11. The semiconductor device according to claim 1 ,
wherein the third insulating film is on and in direct contact with the second metal oxide film portion.
12. A semiconductor device comprising:
a first insulating film;
a first metal oxide film portion on and in contact with the first insulating film;
a second metal oxide film portion on and in contact with the first insulating film;
a transistor comprising the first metal oxide film portion as a channel formation region; and
a pixel electrode overlapping the second metal oxide film portion,
wherein a second insulating film is on and in direct contact with the second metal oxide film portion and overlaps the first metal oxide film portion,
wherein a third insulating film is interposed between the first metal oxide film portion and the second insulating film and overlaps the second metal oxide film portion,
wherein a concentration in hydrogen of the second metal oxide film portion is greater than or equal to 8×10 19 atoms/cm 3 , and
wherein a resistivity of the second metal oxide film portion is greater than or equal to 1×10 −8 times and less than or equal to 1×10 −1 times a resistivity of the first metal oxide film portion.
13. The semiconductor device according to claim 12 ,
wherein a conductivity of the second metal oxide film portion is greater than or equal to 10 S/cm and less than or equal to 1000 S/cm.
14. The semiconductor device according to claim 12 ,
wherein a conductivity of the second metal oxide film portion is greater than or equal to 100 S/cm and less than or equal to 1000 S/cm.
15. The semiconductor device according to claim 12 ,
wherein the second insulating film comprises more nitrogen than oxygen, and
wherein the third insulating film comprises more oxygen than nitrogen.
16. The semiconductor device according to claim 12 , further comprising a pixel portion,
wherein the first metal oxide film portion and the second metal oxide film portion are part of a pixel circuit localized in the pixel portion.
17. The semiconductor device according to claim 12 ,
wherein the first metal oxide film portion and the second metal oxide film portion belong to two physically separate island-shaped metal oxide films.
18. The semiconductor device according to claim 12 ,
wherein each of the first metal oxide film portion and the second metal oxide film portion contains more indium than gallium and more indium than zinc in atomic percentages.
19. The semiconductor device according to claim 12 ,
wherein an indium proportion is about equal as an addition of a gallium proportion and a zinc proportion in each of the first metal oxide film portion and the second metal oxide film portion, in atomic percentages.
20. The semiconductor device according to claim 12 ,
wherein each of the first metal oxide film portion and the second metal oxide film portion is formed from an In—Ga—Zn-based metal oxide containing In, Ga, and Zn at an atomic ratio of 3:1:2.
21. The semiconductor device according to claim 12 ,
wherein a concentration in hydrogen of the first metal oxide film portion is more than 1×10 16 atoms/cm 3 and less than 5×10 19 atoms/cm 3 .
22. The semiconductor device according to claim 12 ,
wherein the third insulating film is on and in direct contact with the second metal oxide film portion.