Method for manufacturing display panel, and display device
A method for manufacturing a display panel, and a display device are disclosed. The method for manufacturing a display panel includes: providing a TFT substrate; dispersing graphene and metal nanowires in a hydrophilic solvent to form a hydrophilic conductive ink; applying the hydrophilic conductive ink onto the TFT substrate to form a composite electrode layer; forming, on the composite electrode layer, a pixel defining layer having a plurality of openings at least partially exposing the composite electrode layer; applying hydrophilic organic ink into the plurality of openings of the pixel defining layer to form an organic layer; drying the composite electrode layer and the organic layer to form a first electrode and an organic light emitting structure; and forming a second electrode on the organic light emitting structure and the pixel defining layer.
1. A method for manufacturing a display panel, comprising:
providing a thin film transistor (TFT) substrate;
dispersing a composite material formed from graphene and metal nanowires in a hydrophilic solvent to form a hydrophilic conductive ink;
applying the hydrophilic conductive ink onto the TFT substrate to form a composite electrode layer;
forming, on the composite electrode layer, a pixel defining layer having a plurality of openings at least partially exposing the composite electrode layer;
applying hydrophilic organic ink into the plurality of openings of the pixel defining layer to form an organic layer;
drying the composite electrode layer and the organic layer to form a first electrode and an organic light emitting structure; and
forming a second electrode on the organic light emitting structure and the pixel defining layer.
2. The method according to claim 1 , wherein the step of dispersing a composite material formed from graphene and metal nanowires in a hydrophilic solvent to form a hydrophilic conductive ink comprises:
forming the composite material from the graphene and the metal nanowires; and
dispersing the composite material in the hydrophilic solvent.
3. The method according to claim 2 , wherein the step of forming the composite material from the graphene and the metal nanowires comprises:
forming a graphene film on a base;
passing a dispersion liquid containing the metal nanowires through a filter to form a metal-nanowire film on the filter;
transferring the metal-nanowire film from the filter onto the graphene film to form the composite material; and
removing the base.
4. The method according to claim 3 further comprising, before removing the base:
applying the composite material with a pressure of about 0.6 MPa for about 30 minutes.
5. The method according to claim 3 , wherein a surface density of the metal nanowires in the composite material is 0.63×10 4 to 9.3×10 4 metal nanowires/mm 2 graphene.
6. The method according to claim 1 , wherein the hydrophilic solvent comprises one of deionized water and ethanol.
7. The method according to claim 1 , wherein an upper portion of the pixel defining layer is hydrophobic, and a lower portion of the pixel defining layer is hydrophilic.
8. The method according to claim 1 , wherein at least one of the conductive ink and the organic ink is applied by an ink jet printing method.
9. The method according to claim 1 further comprising:
forming an encapsulation layer on the second electrode.
10. The method according to claim 1 , wherein the metal nanowires comprise one or more of silver nanowires, copper nanowires, gold nanowires, aluminum nanowires, platinum nanowires, and palladium nanowires.
11. The method according to claim 1 , wherein the step of providing a thin film transistor (TFT) substrate comprises:
forming a gate electrode on a substrate;
forming a gate insulating layer on the gate electrode;
forming an active layer on the gate insulating layer; and
forming a source electrode and a drain electrode on the active layer.
12. The method according to claim 1 , wherein the step of providing a thin film transistor (TFT) substrate comprises:
forming a source electrode and a drain electrode on a substrate;
forming an active layer on the source electrode and the drain electrode;
forming a gate insulating layer on the active layer; and
forming a gate electrode on the gate insulating layer.
13. The method according to claim 11 , wherein the active layer comprises one of an organic semiconductor material and a metal oxide semiconductor material.
14. The method according to claim 12 , wherein the active layer comprises one of an organic semiconductor material and a metal oxide semiconductor material.
15. The method according to claim 11 , wherein the substrate comprises a flexible substrate.
16. The method according to claim 12 , wherein the substrate comprises a flexible substrate.
17. The method according to claim 11 , wherein one or more of the source electrode, the drain electrode, and the gate electrode of a thin film transistor and the second electrode are formed of the conductive ink.
18. The method according to claim 12 , wherein one or more of the source electrode, the drain electrode, and the gate electrode of a thin film transistor and the second electrode are formed of the conductive ink.
19. A display device, comprising the display panel formed through the method according to claim 1 .