Thermally rugged power amplifiers and related methods
Thermally rugged power amplifiers and related methods. In some embodiments, a method for manufacturing a radio-frequency amplifier can include providing or forming a semiconductor substrate, and forming an array of cascoded devices on the semiconductor substrate to be capable of amplifying a signal, such that the array of cascoded devices includes a plurality of cascoded devices arranged in a first row and a plurality of cascoded devices arranged in a second row. Each cascoded device can include an input stage and an output stage arranged in a cascode configuration, and each of the first and second rows can be configured such that the output stages are positioned in a staggered orientation. The staggered arrangement of the cascoded devices in the first row can be offset relative to the staggered arrangement of the cascoded devices in the second row to avoid a direct row-to-row adjacent pair of output stages.
1. A method for manufacturing a radio-frequency amplifier, the method comprising:
providing or forming a semiconductor substrate; and
forming an array of cascoded devices on the semiconductor substrate to be capable of amplifying a signal, such that the array of cascoded devices includes a plurality of cascoded devices arranged in a first row and a plurality of cascoded devices arranged in a second row, each cascoded device including an input stage and an output stage arranged in a cascode configuration, each of the first and second rows configured such that the output stages are positioned in a staggered orientation, the staggered arrangement of the cascoded devices in the first row offset relative to the staggered arrangement of the cascoded devices in the second row to avoid a direct row-to-row adjacent pair of output stages.
2. The method of claim 1 wherein the input stage includes a common emitter transistor, and the output stage includes a common base transistor.
3. The method of claim 1 wherein at least some of the cascoded devices are electrically connected in parallel.
4. The method of claim 3 wherein the plurality of cascoded devices in the first row are electrically connected in parallel.
5. The method of claim 4 wherein the plurality of cascoded devices in the second row are electrically connected in parallel.
6. The method of claim 1 wherein the plurality of cascoded devices in each of the first row and the second row are coupled to a common input and a common output.
7. The method of claim 1 wherein the radio-frequency amplifier is a power amplifier configured to operate with a high-voltage supply.
8. A radio-frequency amplifier comprising:
a semiconductor substrate; and
an array of cascoded devices implemented on the semiconductor substrate and capable of amplifying a signal, the array of cascoded devices including a plurality of cascoded devices arranged in a first row and a plurality of cascoded devices arranged in a second row, each cascoded device including an input stage and an output stage arranged in a cascode configuration, each of the first and second rows configured such that the output stages are positioned in a staggered orientation, the staggered arrangement of the cascoded devices in the first row offset relative to the staggered arrangement of the cascoded devices in the second row to avoid a direct row-to-row adjacent pair of output stages.
9. The radio-frequency amplifier of claim 8 wherein the input stage includes a common emitter transistor, and the output stage includes a common base transistor.
10. The radio-frequency amplifier of claim 8 wherein the staggered orientation of the output stages provide an increase in a nearest pair spacing in the corresponding row, when compared to a non-staggered orientation.
11. The radio-frequency amplifier of claim 10 wherein the output stage is configured to handle more power than the corresponding input stage.
12. The radio-frequency amplifier of claim 10 wherein the increased spacing results in a smaller rise in temperature due to the operation of the radio-frequency amplifier, when compared to the non-staggered orientation.
13. The radio-frequency amplifier of claim 12 wherein the rise in temperature resulting from the staggered orientation is less than half of the rise in temperature resulting from the non-staggered orientation.
14. The radio-frequency amplifier of claim 8 wherein at least some of the cascoded devices are electrically connected in parallel.
15. The radio-frequency amplifier of claim 14 wherein the plurality of cascoded devices in the first row are electrically connected in parallel.
16. The radio-frequency amplifier of claim 15 wherein the plurality of cascoded devices in the second row are electrically connected in parallel.
17. The radio-frequency amplifier of claim 8 wherein the plurality of cascoded devices in each of the first row and the second row are coupled to a common input and a common output.
18. The radio-frequency amplifier of claim 8 wherein the radio-frequency amplifier is a power amplifier configured to operate with a high-voltage supply.
19. A semiconductor die comprising:
a substrate; and
an amplifier implemented on the substrate and configured to amplify a signal, the amplifier including an array of cascoded devices having a plurality of cascoded devices arranged in a first row and a plurality of cascoded devices arranged in a second row, each cascoded device including an input stage and an output stage arranged in a cascode configuration, each of the first and second rows configured such that the output stages are positioned in a staggered orientation, the staggered arrangement of the cascoded devices in the first row offset relative to the staggered arrangement of the cascoded devices in the second row to avoid a direct row-to-row adjacent pair of output stages.
20. The semiconductor die of claim 19 wherein the amplifier is configured as a power amplifier.