Multi-channel thin film transistor and pixel including the same

1. A multi-channel thin film transistor comprising:

a gate electrode;

a semiconductor comprising:

a first channel area, which operates within a first driving range and has a first threshold voltage; and

a second channel area which operates within a second driving range smaller than the first driving range and has a second threshold voltage, wherein an absolute value of the second threshold voltage is greater than an absolute value of the first threshold voltage;

a first electrode connected to an end of the semiconductor; and

a second electrode connected to another end of the semiconductor,

wherein a ratio of a channel width of the second channel area to a channel length of the second channel area is greater than a ratio of a channel width of the first channel area to a channel length of the first channel area.

2. The multi-channel thin film transistor of claim 1 , wherein an overlapping area of the first channel area and the gate electrode is greater than an overlapping area of the second channel area and the gate electrode.

3. The multi-channel thin film transistor of claim 2 , wherein the channel length of the first channel area is greater than the channel length of the second channel area.

4. The multi-channel thin film transistor of claim 2 , wherein an area of a first area of the gate electrode, which corresponds to the first channel area, is greater than an area of a second area of the gate electrode, which corresponds to the second channel area.

5. The multi-channel thin film transistor of claim 2 , wherein the semiconductor comprises:

a first semiconductor comprising the first channel area; and

a second semiconductor comprising the second channel area.

6. The multi-channel thin film transistor of claim 5 , wherein a length of a first area of the first semiconductor, which corresponds to the first channel area, is greater than a length of a second area of the second semiconductor, which corresponds to the second channel area.

7. The multi-channel thin film transistor of claim 1 , wherein an overlapping area of the second channel area and the gate electrode is greater than an overlapping area of the first channel area and the gate electrode.

8. The multi-channel thin film transistor of claim 7 , wherein the channel width of the second channel area is greater than the channel width of the first channel area.

9. A pixel of a display device, the pixel comprising:

a first transistor connected to a scanning line and a data line of the display device;

a capacitor connected between the first transistor and a power voltage line of the display device;

a second transistor connected between the power voltage line and a node, to which the first transistor and the capacitor are connected; and

an emission device connected to the second transistor,

wherein the second transistor comprises:

a first sub-transistor which operates within a first driving range and having a first threshold voltage; and

a second sub-transistor which operates within a second driving range smaller than the first driving range and having a second threshold voltage,

the first sub-transistor and the second sub-transistor are connected to each other in parallel, and

an absolute value of the second threshold voltage is greater than an absolute value of the first threshold voltage,

wherein a ratio of a channel width of the second sub-transistor to a channel length of the second sub-transistor is greater than a ratio of a channel width of the first sub-transistor to a channel length of the first sub-transistor.

10. The pixel of claim 9 , wherein

the channel length of the first sub-transistor is greater than the channel length of the second sub-transistor, or

the channel width of the second sub-transistor is greater than the channel width of the first sub-transistor.

11. The pixel of claim 9 , wherein

the first sub-transistor and the second sub-transistor share a gate electrode,

the gate electrode comprises:

a first area corresponding to a channel area of the first sub-transistor; and

a second area corresponding to a channel area of the second sub-transistor,

wherein an area of the first area is greater than an area of the second area.

12. The pixel of claim 9 , wherein a length of a semiconductor of the first sub-transistor is greater than a length of a semiconductor of the second sub-transistor.

13. A pixel of a display device, the pixel comprising:

a first transistor connected to a scanning line and a data line of the display device;

a capacitor connected between the first transistor and a power voltage line of the display device;

a second transistor connected between the power voltage line and a node, to which the first transistor and the capacitor are connected; and

an emission device connected to the second transistor,

wherein the second transistor comprises:

a first sub-transistor which operates within a first driving range and having a first threshold voltage; and

a second sub-transistor which operates within a second driving range smaller than the first driving range and having a second threshold voltage,

the first sub-transistor and the second sub-transistor are connected to each other in parallel, and

an absolute value of the second threshold voltage is greater than an absolute value of the first threshold voltage,

wherein

each of the first sub-transistor and the second sub-transistor comprises a gate electrodes to which a voltage is applied,

a thickness of a gate insulating layer of the first sub-transistor is greater than a thickness of a gate insulating layer of the second sub-transistor,

the voltage is applied to the gate electrode of the first sub-transistor when the pixel displays a gray level in a first gray level area, and

the voltage is applied to the gate electrode of the second sub-transistor when the pixel displays a gray level in a second gray level area greater than the first gray level area.