IP Library › Granted Patent US 10,224,918
Granted Patent B2
US 10,224,918 · App. 15/372,219 · Granted Mar 5, 2019

Active gate bias driver

Inventors: Rajeev-Krishna Vytla (El Segundo, CA); Danish Khatri (El Segundo, CA); Min Fang (Manhattan Beach, CA)
Assignee: Infineon Technologies Americas Corp.
H03K17/063H03K17/163H03K17/166H03K17/18H03K2217/0036
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,224,918
App. No.
15/372,219
Filed
Dec 7, 2016
Granted
Mar 5, 2019
Kind
B2
Examiner
CHENG, DIANA
Art Unit
2842
USPC
327/109
Abstract

A device is described that includes a gate driver configured to output, to a gate of a switch, a turn-on voltage for activating the switch in response to receiving an indication to activate the switch and an active gate bias driver configured to actively drive a voltage at the gate of the switch to a bias voltage in response to receiving an indication to deactivate the switch. The bias voltage is less than the turn-on voltage and wherein the bias voltage is greater than a ground voltage of the gate driver.

Claims (53)

1. A device comprising:

a gate driver configured to receive a reference voltage signal and output, to a gate of a switch, a turn-on voltage for activating the switch in response to receiving an indication to activate the switch, wherein the reference voltage signal is generated by a reference voltage source having a temperature coefficient corresponding to a temperature coefficient of the switch; and

an active gate bias driver configured to actively drive a voltage at the gate of the switch to a bias voltage according to the reference voltage signal in response to receiving an indication to deactivate the switch, wherein the bias voltage is less than the turn-on voltage and wherein the bias voltage is greater than a ground voltage of the gate driver.

2. The device of claim 1 , wherein the active gate bias driver is further configured to receive an indication of a gate voltage at the gate of the switch and wherein the active gate bias driver is further configured to actively drive the voltage at the gate of the switch to the bias voltage according to the indication of the gate voltage.

3. The device of claim 1 , wherein the active gate bias driver is further configured to receive an indication of a current flowing through the switch and wherein the active gate bias driver is further configured to actively drive the voltage at the gate of the switch to the bias voltage according to the indication of the current flowing through the switch.

4. The device of claim 1 , further comprising a buffer module configured to:

cause the active gate bias driver to initially output, to the gate of the switch, a buffered voltage when actively driving the voltage at the gate of the switch to the bias voltage; and

modify the buffered voltage to correspond to a detected voltage at the gate, the detected voltage being detected after initially outputting the buffered voltage and prior to activating the switch.

5. The device of claim 1 , wherein the active gate bias driver is further configured to actively drive the gate of the switch to the bias voltage during a dead time of the switch, during a body diode conduction of the switch, or a combination thereof.

6. The device of claim 1 , wherein the active gate bias driver is a high voltage gate driver and the switch is a high voltage switch.

7. A device comprising:

a gate driver configured to output, to a gate of a switch, a turn-on voltage for activating the switch in response to receiving an indication to activate the switch; and

an active gate bias driver configured to actively drive a voltage at the gate of the switch to a first bias voltage in response to receiving an indication to deactivate the switch,

wherein the first bias voltage is less than the turn-on voltage and wherein the first bias voltage is greater than a ground voltage of the gate driver, and

wherein the active gate bias driver is further configured to:

actively drive the voltage at the gate of the switch to the first bias voltage during a first dead time of the switch, the first dead time being before the switch is deactivated; and

actively drive the voltage at the gate of the switch to a second bias voltage during a second dead time of the switch, the second dead time being before the switch is activated,

wherein the second bias voltage is different from the first bias voltage.

8. A method comprising:

receiving a reference voltage signal;

outputting, to a gate of a switch, a turn-on voltage for activating the switch in response to receiving an indication to activate the switch, wherein the reference voltage signal is generated by a reference voltage source having a temperature coefficient corresponding to a temperature coefficient of the switch; and

actively driving a voltage at the gate of the switch to a bias voltage according to the reference voltage signal in response to receiving an indication to deactivate the switch, wherein the bias voltage is less than the turn-on voltage and wherein the bias voltage is greater than a ground voltage of the switch.

9. The method of claim 8 , further comprising:

receiving an indication of the gate voltage at the gate of the switch; and

actively driving the voltage at the gate of the switch to the bias voltage according to the indication of the gate voltage.

10. The method of claim 8 , further comprising:

receiving an indication of a current flowing through the switch; and

actively driving the voltage at the gate of the switch to the bias voltage according to the indication of the current flowing through the switch.

11. The method of claim 8 , further comprising:

actively driving a voltage at the gate of the switch to the bias voltage by initially outputting, to the gate of the switch, a buffered voltage;

modifying the buffered voltage to correspond to a detected voltage at the gate, the detected voltage being detected after initially outputting the buffered voltage and prior to activating the switch.

12. The method of claim 8 , further comprising:

actively driving the gate of the switch to the bias voltage during a dead time of the switch, during a body diode conduction of the switch, or a combination thereof.

13. A method comprising:

outputting, to a gate of a switch, a turn-on voltage for activating the switch in response to receiving an indication to activate the switch; and

actively driving a voltage at the gate of the switch to a first bias voltage in response to receiving an indication to deactivate the switch, wherein the first bias voltage is less than the turn-on voltage and wherein the first bias voltage is greater than a ground voltage of the switch,

actively driving the voltage at the gate of the switch to the first bias voltage during a first dead time of the switch, the first dead time being before the switch is deactivated; and

actively driving the voltage at the gate of the switch to a second bias voltage during a second dead time of the switch, the second dead time being before the switch is activated, wherein the second bias voltage is different from the first bias voltage.

14. A system comprising:

a gate driver configured to:

generate a first control signal in response to receiving an indication to activate a switch, the first control signal being configured to activate a first switching element such that the gate drive module outputs, to a gate of the switch, a turn-on voltage for activating the switch; and

generate a second control signal in response to receiving an indication to deactivate the switch, the second control signal being configured to deactivate a second switching element such that the gate drive module outputs, to the gate of the switch, a ground voltage for deactivating the switch; and

an active gate bias driver comprising:

a timing control module configured to output an indication to provide an active gate bias voltage for deactivating the switch based on the first and second control signals; and

an active gate bias module configured to actively drive a voltage at the gate of the switch to a bias voltage in response to receiving the indication to provide the active gate bias voltage for deactivating the switch,

wherein the bias voltage is less than the turn-on voltage and wherein the bias voltage is greater than the ground voltage for deactivating the switch.

15. The system of claim 14 , further comprising:

the switch; and

a resistive element configured to output an indication of a current flowing through the switch,

wherein the active gate bias driver is further configured to actively drive the voltage at the gate of the switch to the bias voltage according to the indication of the current flowing through the switch.

16. The system of claim 14 , further comprising a buffer module configured to:

cause the active gate bias driver to initially output, to the gate of the switch, a buffered voltage when actively driving the voltage at the gate of the switch to the bias voltage; and

modify the buffered voltage to correspond to a detected voltage at the gate, the detected voltage being detected after initially outputting the buffered voltage and prior to activating the switch.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 7, 2016
From: VYTLA, RAJEEV-KRISHNA; KHATRI, DANISH; FANG, MIN
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 040594/0448 →
Continuity (1)
Related Publication 20180159520A1 · Jun 7, 2018