Power conversion device with gate drive circuit
A power conversion device includes a gate voltage adjustment unit (a detection circuit 12 ) which acts on a drive signal from a gate drive circuit 11 that sends a drive signal to the respective gates of a plurality of semiconductor elements Q 1 to Q 2 provided in parallel, and which adjusts the gate voltages of the semiconductor elements. The gate voltage adjustment unit superimposes an induction voltage generated on the basis of a difference between a magnetic flux due to a current flowing through one of the plurality of semiconductor elements and a magnetic flux due to a current flowing through each of the other semiconductor elements, onto a gate voltage sent to at least one gate of the plurality of semiconductor elements.
1. A power conversion device comprising:
a plurality of semiconductor elements provided in parallel;
a gate drive circuit configured to send a drive signal to each gate of the plurality of semiconductor elements; and
a gate voltage adjustment circuit configured to act on the drive signal from the gate drive circuit and adjust a gate voltage of a semiconductor element, wherein
the gate voltage adjustment circuit superimposes an induction voltage generated on a basis of a difference between a magnetic flux due to a current flowing through one of the plurality of semiconductor elements and a magnetic flux due to a current flowing through each of the other semiconductor elements, onto a gate voltage sent to at least one gate of the plurality of semiconductor elements,
the gate voltage adjustment circuit includes a plurality of wiring patterns formed between the plurality of semiconductor elements and the gate drive circuit, and
the gate voltage adjustment circuit is provided between wirings routed from one semiconductor element and each of the other semiconductor elements among the plurality of semiconductor elements, the wirings serving as a main current path.
2. The power conversion device according to claim 1 , wherein
when a threshold voltage of one semiconductor element of the plurality of semiconductor elements is lower than a threshold voltage of each of the other semiconductor elements, the gate voltage adjustment circuit suppresses an increase in a current flowing through the one semiconductor element.
3. The power conversion device according to claim 1 , wherein
when a threshold voltage of one semiconductor element of the plurality of semiconductor elements is higher than a threshold voltage of each of the other semiconductor elements, the gate voltage adjustment circuit promotes an increase in a current flowing through the one semiconductor element.
4. The power conversion device according to claim 1 , wherein
the gate voltage adjustment circuit includes a plurality of gate voltage adjustment sections respectively corresponding to the plurality of semiconductor elements, and
two adjacent gate voltage adjustment sections are inductively coupled so that an inductive component decreases when directions of currents flowing into gates of the two semiconductor elements respectively connected to the two gate voltage adjustment sections are the same and so that the inductive component increases when the directions are different from each other.
5. The power conversion device according to claim 1 , wherein
when a current flowing through a main current path of the one semiconductor element and a current flowing through a main current path of each of the other semiconductor elements are the same, the gate voltage adjustment circuit is provided so that a magnetic flux generated from a wiring serving as the main current path of the one semiconductor element and a magnetic flux generated from a wiring serving as the main current path of each of the other semiconductor elements equally interlink with the wiring pattern.
6. The power conversion device according to claim 1 , wherein
the plurality of semiconductor elements includes three or more semiconductor elements provided in parallel, and
gate voltage adjustment circuits of semiconductor elements at both ends of the three or more semiconductor elements are provided adjacent to a wiring routed from a source of at least one of the semiconductor elements at both ends.
7. The power conversion device according to claim 1 , further comprising,
a speed control resistor for suppressing a steep change of a current driving each gate of the plurality of semiconductor elements, between each gate and the gate drive circuit.
8. The power conversion device according to claim 7 , wherein
the speed control resistor includes a speed control resistor for turn-on of each of the plurality of semiconductor elements and a speed control resistor for turn-off thereof, provided in parallel,
the speed control resistor for turn-on is connected to each gate of the plurality of semiconductor elements via the gate voltage adjustment circuit, and
the speed control resistor for turn-off is directly connected to each gate of the plurality of semiconductor elements.
9. The power conversion device according to claim 7 , wherein
the speed control resistor includes a speed control resistor for turn-on of each of the plurality of semiconductor elements and a speed control resistor for turn-off thereof, provided in parallel, and
the speed control resistor for turn-off and the speed control resistor for turn-on are connected to each gate of the plurality of semiconductor elements via the gate voltage adjustment circuit.