Force sensor with noise shielding layer
A force sensor having a noise shielding layer is disclosed. For a first embodiment, a top noise shielding layer is configured on a top surface of a force sensor to screen noise signals which are caused by human body's touch or approaching from top of the force sensor. For a second embodiment, a bottom noise shielding layer is configured on a bottom surface of the force sensor to screen noise signals which are caused by human body's touch or approaching from bottom of the force sensor.
1. A force sensor, comprising:
a top substrate and a bottom substrate;
a pair of electrodes configured on at least one of the top substrate and the bottom substrate;
a first noise shielding layer electrically coupled to ground, defining a first area for a user's press, and configured on one of a top surface of the top substrate and a bottom surface of the bottom substrate.
2. A force sensor as claimed in claim 1 , further comprising:
a second noise shielding layer electrically coupled to ground, defining a second area for a user's press, and configured on the other one of the top surface of the top substrate and the bottom surface of the bottom substrate.
3. A force sensor as claimed in claim 2 , wherein
the second noise shielding layer and the first noise shielding layer are formed from a single shielding layer.
4. A force sensor as claimed in claim 1 , further comprising:
an intermediate layer configured between the top substrate and the bottom substrate, wherein
the intermediate layer is selected from the group consisting of piezo-capacitive material, compressive-restorable dielectric material, piezo-electric material, piezo-resistive material, and compressible-restorable semiconductor polymer.
5. A force sensor as claimed in claim 1 , wherein
the top substrate and the bottom substrate are formed from a single substrate.
6. A force sensor as claimed in claim 1 , wherein the pair of electrodes includes:
a top electrode configured on a bottom surface of the top substrate, and
a bottom electrode configured on a top surface of the bottom substrate.
7. A force sensor as claimed in claim 1 , wherein
the pair of electrodes includes coplanar first and second electrodes configured on a top surface of the bottom substrate.
8. A force sensor, comprising:
a top substrate and a bottom substrate;
a pair of electrodes configured on at least one of the top substrate and the bottom substrate; and
a first noise shielding layer electrically coupled to ground, defining a first area for a user's press, and configured on one of a top surface of the top substrate and a bottom surface of the bottom substrate, wherein
the top substrate and the bottom substrate are formed from a single substrate.
9. A force sensor as claimed in claim 8 , further comprising:
a second noise shielding layer electrically coupled to ground, defining a second area for a user's press, and configured on the other one of the top surface of the top substrate and the bottom surface of the bottom substrate.
10. A force sensor as claimed in claim 9 , wherein
the second noise shielding layer and the first noise shielding layer are formed from a single shielding layer.
11. A force sensor as claimed in claim 8 , further comprising:
an auxiliary metal configured on a bottom surface of the top substrate.
12. A force sensor as claimed in claim 11 , further comprising:
an intermediate layer configured between the auxiliary metal and the pair of coplanar electrodes, wherein
the pair of electrodes includes coplanar first and second electrodes configured on a top surface of the bottom substrate, and
the intermediate layer is selected from a group consisting of piezo-capacitive material, compressive-restorable dielectric material, piezo-electric material, piezo-resistive material, and compressible-restorable semiconductor polymer.
13. A force sensor as claimed in claim 8 , wherein the pair of electrodes includes:
a top electrode configured on a bottom surface of the top substrate, and
a bottom electrode configured on a top surface of the bottom substrate.
14. A force sensor as claimed in claim 8 , wherein
the pair of electrodes includes coplanar first and second electrodes configured on a top surface of the bottom substrate.
15. A force sensor, comprising:
a top substrate and a bottom substrate;
a top electrode configured on a top surface of the top substrate, defining a first area for a user's press, and electrically coupled to ground;
a bottom electrode configured on a top surface of the bottom substrate; and
an intermediate layer configured between the top substrate and the bottom electrode, wherein
the top electrode is configured as a first shielding layer and also as a counter electrode with respect to the bottom electrode, and
the intermediate layer is selected from the group consisting of piezo-capacitive material, compressive-restorable dielectric material, piezo-electric material, piezo-resistive material, and compressible-restorable semiconductor polymer.
16. A force sensor as claimed in claim 15 , further comprising:
an air space between the intermediate layer and the bottom electrode.
17. A force sensor as claimed in claim 15 , further comprising:
a second noise shielding layer electrically coupled to ground, defining a second area for a user's press, and configured on a bottom surface of the bottom substrate.
18. A force sensor as claimed in claim 15 , wherein
the top substrate and the bottom substrate are formed from a single substrate.
19. A force sensor as claimed in claim 18 , further comprising:
a second noise shielding layer electrically coupled to ground, defining a second area for a user's press, and configured on a bottom surface of the bottom substrate, wherein
the second noise shielding layer and the first noise shielding layer are formed from a single shielding layer.