Interposer and semiconductor module for use in automotive applications

1. An interposer composed of silicon for use in a semiconductor module, the interposer comprising:

a top side;

an underside;

a connection layer; and

a metal-less thermal layer,

wherein each of the connection layer and the thermal layer are positioned in planes running between the top side and the underside,

wherein the connection layer forms a surface of the interposer that includes a network with contact pads arranged on the surface of the top side for connection of functional semiconductors arranged on the top side of the interposer, wherein at least one ESD protection structure is integrated in the connection layer serving for connecting shields for the functional semiconductors on the top side of the interposer,

wherein the underside of the interposer formed by the thermal layer dissipates heat generated by the functional semiconductors, and

wherein at least one of the functional semiconductors is arranged on the surface of the top side of the interposer and another one of the functional semiconductors is arranged on top of the at least one of the functional semiconductors.

2. The interposer of claim 1 , wherein the contact pads of the connection layer are arranged on the surface of the interposer, the contact pads serving for linking the interposer to external terminals.

3. The interposer of claim 1 , further comprising a metallization layer formed on the underside of the thermal layer that facilitates heat conduction.

4. A semiconductor module for automotive use with at least one interposer arranged on a semiconductor chip, wherein at least one functional semiconductor is arranged on the surface of the at least one interposer, wherein the at least one interposer comprises:

a top side;

an underside;

a connection layer; and

a metal-less thermal layer,

wherein each of the connection layer and the thermal layer are positioned in planes running between the top side and the underside,

wherein the connection layer forms a surface of the interposer that includes a network with contact pads arranged on the surface of the top side for connection of functional semiconductors arranged on the top side of the interposer, wherein the connection layer includes at least one ESD protection structure integrated therein serving for connecting shields for the functional semiconductors on the top side of the interposer,

wherein the underside of the interposer formed by the thermal layer dissipates heat generated by the functional semiconductors, and

wherein at least one of the functional semiconductors is arranged on the top side and another one of the functional semiconductors is arranged on top of the at least one of the functional semiconductors.

5. The semiconductor module of claim 4 , wherein the contact pads of the connection layer are arranged on the surface of the interposer, the contact pads serving for linking the interposer to external terminals.

6. The semiconductor module of claim 4 , further comprising a metallization layer formed on the underside of the thermal layer that facilitates heat conduction.

7. The semiconductor module of claim 4 , wherein the underside of the at least one interposer formed by the thermal layer is connected to a die paddle by a die attach material.

8. The semiconductor module of claim 4 , wherein at least one of the functional semiconductors arranged on the top side of the at least one interposer is arranged in a shielding cap, wherein the shielding cap is connected to the at least one ESD protection structure of the connection layer.

9. The semiconductor module of claim 4 , wherein the semiconductor module is arranged in a molding compound forming a package.

10. The semiconductor module of claim 4 , wherein the semiconductor module is connected to external terminals by bond wires via contact pads arranged on the top side of the interposer.

11. The semiconductor module of claim 4 , wherein the network is at least partly embedded within the connection layer.

12. The semiconductor module of claim 1 , wherein the network is at least partly embedded within the connection layer.

13. A semiconductor module for automotive use with at least one interposer arranged on a semiconductor chip, wherein at least one functional semiconductor is arranged on the surface of the at least one interposer, wherein the at least one interposer comprises:

a top side;

an underside;

a connection layer forming a surface of the interposer; and

a metal-less thermal layer,

wherein each of the connection layer and the thermal layer are arranged between the top side and the underside,

wherein the connection layer includes a network at least partly embedded therein and having contact pads arranged on the surface of the top side for connection of functional semiconductors arranged on the top side of the interposer, and at least one ESD protection circuit integrated therein serving for connecting shields for the functional semiconductors on the top side of the interposer,

wherein the underside of the interposer formed by the thermal layer dissipates heat generated by the functional semiconductors, and

wherein at least one of the functional semiconductors is arranged on top of another one of the functional semiconductors, the at least one of the functional semiconductors arranged on the top side, and the network connects with the another one of the functional semiconductors.

14. The semiconductor module of claim 4 , wherein the network connects with the another one of the functional semiconductors.

15. The semiconductor module of claim 12 , wherein the network connects with the another one of the functional semiconductors.

16. The interposer of claim 1 , wherein the at least one protection structures serve for handling overvoltage and/or overcurrent.