Solid-state imaging element and electronic device to improve quality of an image
The present technology relates to a solid-state imaging element and an electronic device capable of improving image quality of the solid-state imaging element. The solid-state imaging element includes a photoelectric conversion unit adapted to photoelectrically convert incident light incident from a predetermined incident surface. Also, the solid-state imaging element includes a wire arranged on a bottom surface side that is an opposite surface of the incident surface of the photoelectric conversion unit, and formed with a protruding pattern on a surface facing the photoelectric conversion unit. The present technology can be applied to, for example, a solid-state imaging element such as a CMOS image sensor, and an electronic device including the solid-state imaging element.
1. A solid-state imaging element, comprising:
a wiring layer, and
a photoelectric conversion unit configured to photoelectrically convert incident light incident from incident surface of the photoelectric conversion unit, wherein the photoelectric conversion unit includes a plurality of patterns, wherein positions of the plurality of patterns with respect to the wiring layer are misaligned from each other along a straight line in an extending direction of the wiring layer,
wherein the wiring layer is on a bottom surface side of the photoelectric conversion unit, wherein the bottom surface side is opposite to the incident surface, and wherein the wiring layer includes a protruding pattern on a surface that faces the photoelectric conversion unit.
2. The solid-state imaging element according to claim 1 , wherein the plurality of patterns are at different intervals in the extending direction of the wiring layer.
3. The solid-state imaging element according to claim 1 , wherein a pixel in a proximity to an outer periphery of the solid-state imaging element has a lower density of patterns in a direction vertical to a side of the outer periphery.
4. The solid-state imaging element according to claim 1 , wherein each of the positions of the plurality of patterns is different than a position of a first wire of the wiring layer, wherein the position of the first wire is closer to the photoelectric conversion unit than a position of a second wire, and wherein the second wire includes a set of patterns of the plurality of patterns.
5. The solid-state imaging element according to claim 1 , wherein a width of each of the plurality of patterns is based on a width of the wiring layer.
6. The solid-state imaging element according to claim 1 , wherein a pixel in proximity to a side of an outer periphery of the solid-state imaging element includes a set of patterns of the plurality of patterns, and wherein a length corresponding to the set of patterns in the extending direction of the wiring layer is greater than a threshold length.
7. The solid-state imaging element according to claim 1 ,
wherein the wiring layer comprises a plurality of wires,
wherein the plurality of patterns are not formed in a specific wire of the plurality of wires of the wiring layer, and
wherein the specific wire is closest to a bottom surface of the photoelectric conversion unit among the plurality of wires.
8. The solid-state imaging element according to claim 1 , wherein the plurality of patterns are in the photoelectric conversion unit of a pixel that receives light of a specific wavelength or more.
9. The solid-state imaging element according to claim 1 , wherein an arrangement of the plurality of patterns is based on at least one of a connection of wires of adjacent wiring layers or a connection of a wire of the wiring layer to a semiconductor substrate of the photoelectric conversion unit.
10. An electronic device, comprising:
a solid-state imaging element that comprises:
a wiring layer; and
a photoelectric conversion unit configured to photoelectrically convert incident light incident from incident surface of the photoelectric conversion unit, wherein the photoelectric conversion unit includes a plurality of patterns, and wherein positions of the plurality of patterns with respect to the wiring layer are misaligned from each other along a straight line in an extending direction of the wiring layer,
wherein the wiring layer is on a bottom surface side of the photoelectric conversion unit, wherein the bottom surface side is opposite to the incident surface, and wherein the wiring layer includes a protruding pattern on a surface that faces the photoelectric conversion unit.