Semiconductor device and method for operating the semiconductor device
A potential is held stably. A negative potential is generated with high accuracy. A semiconductor device with a high output voltage is provided. The semiconductor device includes a first transistor, a second transistor, a capacitor, and a comparator. The comparator includes a non-inverting input terminal, an inverting input terminal, and an output terminal. A gate and one of a source and a drain of the first transistor are electrically connected to each other. One of a source and a drain of the second transistor is electrically connected to the non-inverting input terminal of the comparator, one electrode of the capacitor, and a gate of the second transistor. The other of the source and the drain of the second transistor is electrically connected to the one of the source and the drain of the first transistor. The first transistor and the second transistor each contain an oxide semiconductor.
1. A semiconductor device comprising:
a first transistor and a second transistor;
a first capacitor and a second capacitor;
a comparator; and
a logic circuit,
wherein one of a source and a drain of the first transistor is electrically connected to one electrode of the first capacitor and one of a source and a drain of the second transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to one electrode of the second capacitor and a non-inverting input terminal of the comparator,
wherein a gate of the first transistor is electrically connected to the one of the source and the drain of the first transistor,
wherein a gate of the second transistor is electrically connected to the other of the source and the drain of the second transistor,
wherein an input terminal the logic circuit is electrically connected to an output terminal of the comparator,
wherein an output terminal of the logic circuit is electrically connected to the other electrode of the first capacitor, and
wherein each of a channel region of the first transistor and the second transistor comprises an oxide semiconductor comprising indium.
2. The semiconductor device according to claim 1 , wherein the other of the source and the drain of the first transistor is electrically connected to an inverting input terminal of the comparator.
3. The semiconductor device according to claim 1 comprising a charge pump,
wherein an output terminal of the charge pump is electrically connected to the other of the source and the drain of the first transistor, and
wherein the charge pump comprises a transistor containing silicon in a channel region.
4. The semiconductor device according to claim 1 comprising a memory device,
wherein the memory device comprises a plurality of transistors each having a back gate and a channel region containing an oxide semiconductor, and
wherein the back gate of each of the plurality of transistors is electrically connected to the other of the source and the drain of the second transistor.
5. The semiconductor device according to claim 4 , wherein the channel region of the second transistor comprises a portion whose energy band gap is larger than an energy band gap of any of the plurality of transistors included in the memory device.
6. The semiconductor device according to claim 4 ,
wherein the channel region of the second transistor and the channel regions of the plurality of transistors in the memory device contain indium, an element M, and zinc,
wherein the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium,
wherein an atomic ratio of indium to the element M and zinc in the channel region of the second transistor is x 2 :y 2 :z 2 ,
wherein an atomic ratio of indium to the element M and zinc in the channel region of any of the plurality of transistors in the memory device is x 5 :y 5 :z 5 , and
wherein y 5 /x 5 is larger than y 2 /x 2.
7. The semiconductor device according to claim 1 , wherein a reference potential is supplied to an inverting input terminal of the comparator.
8. A semiconductor device comprising:
a first transistor and a second transistor;
a first capacitor and a second capacitor; and
a comparator,
wherein one of a source and a drain of the first transistor is electrically connected to one electrode of the first capacitor and one of a source and a drain of the second transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to one electrode of the second capacitor and a non-inverting input terminal of the comparator,
wherein each of the first transistor and the second transistor comprises a gate and a back gate,
wherein the gate of the first transistor is electrically connected to the one of the source and the drain of the first transistor and the back gate of the first transistor,
wherein the gate of the second transistor is electrically connected to the other of the source and the drain of the second transistor and the back gate of the second transistor, and
wherein each of a channel region of the first transistor and the second transistor comprises an oxide semiconductor comprising indium.
9. The semiconductor device according to claim 8 , wherein the other of the source and the drain of the first transistor is electrically connected to an inverting input terminal of the comparator.
10. The semiconductor device according to claim 8 , wherein a reference potential is supplied to an inverting input terminal of the comparator.
11. The semiconductor device according to claim 8 , further comprising a logic circuit,
wherein an input terminal the logic circuit is electrically connected to an output terminal of the comparator, and
wherein an output terminal of the logic circuit is electrically connected to the other electrode of the first capacitor.
12. The semiconductor device according to claim 8 , further comprising:
a charge pump electrically connected to the other of the source and the drain of the first transistor; and
a memory device electrically comprising a plurality of transistors each having a back gate,
wherein the back gate of each of the plurality of transistors is electrically connected to the other of the source and the drain of the second transistor.
13. A semiconductor device comprising:
a first transistor and a second transistor;
a first capacitor and a second capacitor;
a comparator; and
a logic circuit,
wherein one of a source and a drain of the first transistor is electrically connected to one electrode of the first capacitor and one of a source and a drain of the second transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to one electrode of the second capacitor and a non-inverting input terminal of the comparator,
wherein a gate of the first transistor is electrically connected to the other of the source and the drain of the first transistor,
wherein a gate of the second transistor is electrically connected to the one of the source and the drain of the second transistor,
wherein an input terminal the logic circuit is electrically connected to an output terminal of the comparator,
wherein an output terminal of the logic circuit is electrically connected to the other electrode of the first capacitor, and
wherein each of a channel region of the first transistor and the second transistor comprises an oxide semiconductor comprising indium.
14. The semiconductor device according to claim 13 , wherein the other of the source and the drain of the first transistor is electrically connected to an inverting input terminal of the comparator.
15. The semiconductor device according to claim 13 , further comprising:
a charge pump electrically connected to the other of the source and the drain of the first transistor; and
a memory device electrically comprising a plurality of transistors each having a back gate,
wherein the back gate of each of the plurality of transistors is electrically connected to the other of the source and the drain of the second transistor.