Resist underlayer film composition, patterning process, and method for forming resist underlayer film

1. A resist underlayer film composition, wherein the resist underlayer film composition is used for a multilayer resist method, comprising:

(A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1),

(A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and

(B) an organic solvent,

wherein R 01 represents a hydrogen atom or a methyl group; and R 02 represents a group selected from following formulae (1-1) to (1-3),

wherein the dotted line represents a bonding hand.

2. The resist underlayer film composition according to claim 1 , wherein the (A2) component contains any one of a compound represented by following general formula (2A) and a compound represented by following general formula (3A) or both,

R X′) m2   (2A)

wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X′ represents a group represented by following general formula (2B); and “m2” represents an integer satisfying 1≤m2≤5,

wherein “n3” represents 0 or 1; “n4” represents 1 or 2; X 4 represents a group represented by following general formula (2C); and “n6” represents 0, 1, or 2; however, “n4” represents 1 when “n3” is 0 and “n6” is 0,

wherein R 11 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, and the hydrogen atom on the benzene ring may be optionally substituted by a methyl group or a methoxy group,

wherein R 101 , R 102 , R 103 , and R 104 each represents independently a hydrogen atom or a hydroxyl group; “m100” represent 1, 2, or 3; R 100 represents a hydrogen atom or a hydroxyl group when “m100” is 1, or a single bond or a group represented by following general formula (3B) when “m100” is 2, or a group represented by following general formula (3C) when “m100” is 3, and the hydrogen atom on the benzene ring may be optionally substituted by a methyl group, a methoxy group, a hydroxymethyl group, or a methoxymethyl group; “m101” represents 0 or 1, “m102” represents 1 or 2, “m103” represents 0 or 1, “m104” represents 1 or 2, and “m105” represents 0 or 1; when “m101” is 0, “n101” and “n102” represent an integer satisfying 0≤n101≤3, 0≤n102≤3, and 1≤n101+n102≤4; when “m101” is 1, “n101”, “n102”, “n103”, and “n104” represent an integer satisfying 0≤n101≤2, 0≤n102≤2, 0≤n103≤2, 0≤n104≤2, and 2≤n101+n102+n103+n104≤8; however, when “m101” is 0 and “n102” is 0, “n101” represents 0 or 1 and “m100” represents 2 or 3; when “m103” is 0, “m102” represents 1; and when “m105” is 0, “m104” represents 1,

wherein * represents a bonding site; R 106 and R 107 represent a hydrogen atom or an organic group having 1 to 24 carbon atoms; and R −106 and R 107 may be bonded to form a ring structure,

wherein * represents a bonding site; and R 108 represents a hydrogen atom or an organic group having 1 to 15 carbon atoms.

3. The resist underlayer film composition according to claim 1 , wherein the polymer (1A) further contains one, or two or more, of a repeating unit represented by following general formula (2),

wherein R 01 represents the same as before; A 1 represents a single bond, —CO 2 —, or a divalent connecting group having 2 to 10 carbon atoms and including —CO 2 —; and Ar 1 represents a substituted or unsubstituted aryl group having 6 to 20 carbon atoms.

4. The resist underlayer film composition according to claim 1 , wherein the polymer (1A) further contains one, or two or more, of a repeating unit represented by following general formula (3),

wherein R 01 represents the same as before; and R c represents a monovalent group having 3 to 20 carbon atoms and having an alicyclic structure.

5. The resist underlayer film composition according to claim 1 , wherein a weight average molecular weight of the polymer (1A) is in a range of 1,000 to 20,000.

6. The resist underlayer film composition according to claim 1 , wherein the resist underlayer film composition further contains one or more additives out of (C) an acid generator, (D) a surfactant, (E) a crosslinking agent, (F) a plasticizer, and (G) a pigment.

7. The resist underlayer film composition according to claim 1 , wherein the resist underlayer film composition is the resist underlayer film composition which gives a resist underlayer film having a resistance to an ammonia-containing hydrogen peroxide aqueous solution.

8. The resist underlayer film composition according to claim 7 , wherein the resist underlayer film is the resist underlayer film which does not show any peel-off when a silicon substrate formed with the resist underlayer film is soaked into a 1.0% by mass hydrogen peroxide aqueous solution containing 0.5% by mass of ammonia at 70° C. for 5 minutes.

9. A patterning process, wherein the patterning process is to form a pattern on a substrate to be processed and comprises:

(I-1) forming a resist underlayer film on the substrate to be processed by using the resist underlayer film composition according to claim 1 ,

(I-2) forming a resist upper layer film on the resist underlayer film by using a photoresist composition,

(I-3) forming a pattern on the resist upper layer film by developing the resist upper layer film by using a developer after the resist upper layer film is pattern-exposed, and

(I-4) transcribing the pattern to the resist underlayer film by dry etching using as a mask the resist upper layer film formed with the pattern.

10. A patterning process, wherein the patterning process is to form a pattern on a substrate to be processed and comprises:

(II-1) forming a resist underlayer film on the substrate to be processed by using the resist underlayer film composition according to claim 1 ,

(II-2) forming a resist intermediate film on the resist underlayer film,

(II-3) forming a resist upper layer film on the resist intermediate film by using a photoresist composition,

(II-4) forming a pattern on the resist upper layer film by developing the resist upper layer film by using a developer after the resist upper layer film is pattern-exposed,

(II-5) transcribing the pattern to the resist intermediate film by dry etching using as a mask the resist upper layer film formed with the pattern, and

(II-6) transcribing the pattern to the resist underlayer film by dry etching using as a mask the resist intermediate film transcribed with the pattern.

11. A patterning process, wherein the patterning process is to form a pattern on a substrate to be processed and comprises:

(III-1) forming a resist underlayer film on the substrate to be processed by using the resist underlayer film composition according to claim 1 ,

(III-2) forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxide nitride film on the resist underlayer film,

(III-3) forming an organic antireflective film on the inorganic hard mask intermediate film,

(III-4) forming a resist upper layer film on the organic antireflective film by using a photoresist composition,

(III-5) forming a pattern on the resist upper layer film by developing the resist upper layer film by using a developer after the resist upper layer film is pattern-exposed,

(III-6) transcribing the pattern to the organic antireflective film and the inorganic hard mask intermediate film by dry etching using as a mask the resist upper layer film formed with the pattern, and

(III-7) transcribing the pattern to the resist underlayer film by dry etching using as a mask the inorganic hard mask intermediate film transcribed with the pattern.

12. The patterning process according to claim 10 , wherein after the (II-6) step, the patterning process further has a step in which the resist intermediate film transcribed with the pattern is removed by wet etching using a basic hydrogen peroxide aqueous solution.

13. The patterning process according to claim 9 , wherein after the (I-4) step, the (II-6) step, or the (III-7) step, the patterning process further has a step in which the pattern is transcribed to the substrate to be processed by wet etching using a basic hydrogen peroxide aqueous solution and the resist underlayer film transcribed with the pattern as a mask.

14. The patterning process according to claim 9 , wherein after the (I-4) step, the (II-6) step, or the (III-7) step, the patterning process further has a step in which the substrate to be processed is pattern-processed by an ion implantation using as a mask the resist underlayer film transcribed with the pattern.

15. The patterning process according to claim 14 , wherein after the step of the patterning process of the substrate to be processed by the ion implantation, the patterning process further has a step in which the resist intermediate film transcribed with the pattern is removed by wet etching using a basic hydrogen peroxide aqueous solution.

16. The patterning process according to claim 9 , wherein the resist underlayer film composition having a dry etching rate faster than a dry etching rate of the resist upper layer film is used.

17. The patterning process according to claim 9 , wherein the resist underlayer film is formed by applying the resist underlayer film composition onto the substrate to be processed followed by heat-treatment thereof in a temperature 100° C. or more and 300° C. or less, both ends inclusive, for a period of 10 seconds or more and 600 seconds or less.

18. The patterning process according to claim 9 , wherein as the substrate to be processed, a substrate having a structural body with a height of 30 nm or more, or having a step is used.

19. A method for forming a resist underlayer film, wherein the resist underlayer film composition according to claim 1 is applied onto a substrate to be processed, and then, the resist underlayer film composition is subjected to heat-treatment in a temperature 100° C. or more and 300° C. or less, both ends inclusive, for a period of 10 seconds or more and 600 seconds or less to form a cured film.

20. The method for forming the resist underlayer film according to claim 19 , wherein as the substrate to be processed, a substrate having a structural body with a height of 30 nm or more, or having a step is used.