Selective dry etching of metal films comprising multiple metal oxides
A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.
1. A method of etching a substrate surface, the method comprising:
exposing the substrate surface comprising a mixed metal oxide to a halogenation agent, the substrate surface having a relative metal composition, the halogenation agent comprising one or more of HF, NF 3 , Cl 2 , BCl 3 , a compound with an empirical formula SF n , where n is 2 to 6, or C a H b X c where X is a halogen, a is 1 to 6, b is 1 to 13 and c is 1 to 13; and
exposing the substrate surface to a ligand transfer agent to etch the substrate surface, the ligand transfer agent comprising one or more of MR 2 X or MR 3 , where M is In, Ga, Al or B, R is a C1 to C6 group, and X is a halogen,
wherein the relative metal composition of the substrate surface is about the same after etching.
2. The method of claim 1 , wherein the mixed metal oxide comprises indium and at least one additional metal.
3. The method of claim 1 , wherein the mixed metal oxide comprises gallium and at least one additional metal.
4. The method of claim 1 , wherein the mixed metal oxide comprises zinc and at least one additional metal.
5. The method of claim 1 , wherein the mixed metal oxide comprises indium, gallium and zinc.
6. The method of claim 1 , wherein the halogenation agent comprises HF.
7. The method of claim 1 , wherein the halogenation agent comprises NF 3 .
8. The method of claim 1 , wherein in the ligand transfer agent comprises MR 2 X and M is In, Ga, Al or B, R is a C1 to C6 group, and X is a halogen.
9. The method of claim 1 , wherein in the ligand transfer agent comprises MR 3 and M is In, Ga, Al or B, and R is a C1 to C6 group.
10. The method of claim 1 , wherein the ligand transfer agent comprises one or more of InR 2 X or InR 3 , R is a C1 to C6 alkyl group, and X is a halogen.
11. The method of claim 1 , wherein the ligand transfer agent comprises one or more of GaR 2 X or GaR 3 , R is a C1 to C6 group, and X is a halogen.
12. The method of claim 1 , wherein the ligand transfer agent comprises one or more of BR 2 X or BR 3 , R is a C1 to C6 group, and X is a halogen.
13. The method of claim 1 , wherein the halogenation agent comprises a compound with the empirical formula SF n , where n is 2 to 6.
14. The method of claim 13 , wherein the halogenation agent comprises SF 4 .
15. The method of claim 13 , wherein the halogenation agent comprises SF 6 .
16. The method of claim 1 , wherein the ligand transfer agent comprises one or more of AlR 2 X or AlR 3 , R is a C1 to C6 group, and X is a halogen.
17. The method of claim 16 , wherein the ligand transfer agent comprises Al(CH 3 ) 2 Cl.
18. The method of claim 16 , wherein the ligand transfer agent comprises Al(CH 3 ) 3 .
19. A method of etching a substrate surface, the method comprising:
providing a substrate surface comprising a mixed metal oxide of indium oxide, gallium oxide and zinc oxide, the substrate surface having a relative metal composition;
exposing the substrate surface to HF to form a halogenated substrate surface; and
exposing the halogenated substrate surface to Al(CH 3 ) 3 to etch the halogenated substrate surface to remove the indium oxide, gallium oxide and zinc oxide,
wherein the relative metal composition of the substrate surface is about the same after etching.
20. A method of selectively etching a substrate surface, the method comprising:
providing a substrate having a first surface and a second surface, the first surface comprising silicon oxide and the second surface comprising a mixed metal oxide of indium oxide, gallium oxide and zinc oxide, the second surface having a relative metal composition;
exposing the substrate to a halogenation agent to form a halogenated second surface; and
exposing the substrate to a ligand transfer agent to etch the halogenated second surface to remove the indium oxide, gallium oxide and zinc oxide,
wherein the relative metal composition of the second surface is about the same after etching, and if the first surface is etched, an etch rate of the second surface is greater than or equal to about 25 times an etch rate of the first surface.