Backside semiconductor die trimming

1. A method comprising:

providing a semiconductor die, the semiconductor die comprising:

a substrate comprising a first side and a second side opposite to the first side;

a device layer over the first side of the substrate such that the device layer is closer to the first side than the second side, wherein a surface of the device layer opposite the substrate is a frontside of the semiconductor die; and

an adjustable component in the device layer, wherein the adjustable component comprises at least one fuse;

removing at least a portion of the second side of the substrate to expose a backside of the semiconductor die opposite the frontside;

thinning at least a portion of material located between the backside of the semiconductor die and the at least one fuse; and

subsequently trimming the adjustable component from the backside of the semiconductor die.

2. The method of claim 1 wherein trimming the adjustable component from the backside of the semiconductor die comprises using a laser to break a connection formed by the at least one fuse in the adjustable component.

3. The method of claim 2 wherein breaking the connection formed by the at least one fuse in the adjustable component causes a change in one or more of a resistance, a capacitance, an inductance, and a size of the adjustable component.

4. The method of claim 1 wherein thinning at least a portion of the material located between the backside of the semiconductor die and the at least one fuse before trimming the adjustable component from the backside of the semiconductor die comprises removing all of the material over the at least one fuse such that the at least one fuse is exposed to the outside environment through the backside of the semiconductor die.

5. The method of claim 1 further comprising mounting the semiconductor die to a carrier before trimming the adjustable component from the backside of the semiconductor die, wherein the semiconductor die is mounted to the carrier such that the device layer is between the substrate and the carrier.

6. The method of claim 5 wherein trimming the adjustable component from the backside of the semiconductor die comprises using a laser to break a connection formed by the at least one fuse in the adjustable component.

7. The method of claim 6 wherein breaking the connection formed by the at least one fuse in the adjustable component causes a change in one or more of a resistance, a capacitance, an inductance, and a size of the adjustable component.

8. The method of claim 1 wherein the semiconductor die is a silicon-on-insulator (SOI) semiconductor die in which the substrate is separated by the device layer by an insulating layer and a surface of the insulating layer opposite the device layer is the backside of the semiconductor die.

9. The method of claim 1 wherein removing at least a portion of the second side of the substrate comprises:

providing a cavity surrounding the substrate; and

providing an etching solution into the cavity via one or more holes in the cavity over the backside of the semiconductor die.

10. The method of claim 9 wherein the one or more holes in the cavity are aligned with the at least one fuse in the adjustable component such that a laser may be used to break a connection formed by the at least one fuse by directing the laser through the one or more holes in the cavity.

11. A method comprising:

providing a semiconductor die comprising an adjustable component in a device layer of the semiconductor die, wherein a surface of the device layer is a frontside of the semiconductor die that is opposite a backside of the semiconductor die, and wherein the semiconductor die further comprises an insulating layer and wherein the device layer is over the insulating layer;

flip-chip mounting the semiconductor die to a carrier wherein the frontside of the semiconductor die is adjacent the carrier;

thinning at least a portion of the insulating layer from the backside of the semiconductor die located between at least one fuse in the adjustable component and a backside surface of the semiconductor die; and

trimming the adjustable component from the backside of the semiconductor die.

12. The method of claim 11 wherein trimming the adjustable component from the backside of the semiconductor die comprises using a laser to break a connection formed by the at least one fuse in the adjustable component.

13. The method of claim 12 wherein using the laser to break the connection formed by the at least one fuse in the adjustable component causes a change in one or more of a resistance, a capacitance, an inductance, and a size of the adjustable component.

14. The method of claim 11 wherein thinning at least a portion of the insulating layer from the backside of the semiconductor die located between the at least one fuse in the adjustable component and the backside surface of the semiconductor die comprises etching at least a portion of the insulating layer located between the at least one fuse in the adjustable component and the backside surface of the semiconductor die.

15. The method of claim 11 wherein thinning at least a portion of the insulating layer from the backside of the semiconductor die located between the at least one fuse in the adjustable component and the backside surface of the semiconductor die comprises removing all of the insulating layer located over the at least one fuse in the adjustable component such that the at least one fuse is exposed to the outside environment through the backside of the semiconductor die.

16. The method of claim 11 wherein the semiconductor die comprises a substrate and the device layer is over the substrate, wherein a surface of the device layer opposite the substrate is the frontside of the semiconductor die.

17. The method of claim 16 further comprising simultaneously removing at least a portion of the substrate to expose the backside of the semiconductor die opposite the frontside of the semiconductor die and thinning at least a portion of the insulating layer from the backside of the semiconductor die located between the at least one fuse in the adjustable component and the backside surface of the semiconductor die.

18. The method of claim 16 wherein trimming the adjustable component from the backside of the semiconductor die comprises directing a laser at the at least one fuse through the backside of the semiconductor die.