Semiconductor device and electrical device
According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is ½ of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5×10 19 atoms/cm 3 or less.
1. A semiconductor device, comprising:
a first semiconductor layer including a nitride semiconductor;
a first electrode separated from the first semiconductor layer in a first direction; and
a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode,
the first insulating film having a first thickness in the first direction,
the first insulating film including a first position, a distance between the first position and the first semiconductor layer being ½ of the first thickness,
a first hydrogen concentration of hydrogen at the first position being 2.5×10 19 atoms/cm 3 or less,
wherein a stacked region including the first semiconductor layer and the first insulating film includes a nitrogen peak position, and
a concentration of nitrogen in the stacked region has a peak at the nitrogen peak position, the peak corresponding to a highest nitrogen concentration in the stacked region and no other position in the stacked region having the highest concentration of nitrogen.
2. The device according to claim 1 , wherein
the first insulating film includes a second position,
a second hydrogen concentration of hydrogen at the second position is a peak of a concentration of hydrogen in a region between the first position and the first semiconductor layer,
a distance along the first direction between the second position and the nitrogen peak position is 10 nm or less, and
the first hydrogen concentration is not more than 0.041 times the second hydrogen concentration.
3. The device according to claim 2 , wherein the second hydrogen concentration is 3×10 21 atoms/cm 3 or less.
4. The device according to claim 3 , wherein the second hydrogen concentration is 2×10 19 atoms/cm 3 or more.
5. The device according to claim 2 , wherein a second fluorine concentration of fluorine at the second position is 3.5×10 17 atoms/cm 3 or less.
6. The device according to claim 5 , wherein a first fluorine concentration of fluorine at the first position is not more than 0.36 times the second fluorine concentration.
7. The device according to claim 6 , wherein the first fluorine concentration is 4×10 16 atoms/cm 3 or less.
8. The device according to claim 1 , wherein a bond angle of silicon-oxygen-silicon in the first insulating film is not less than 142 degrees but less than 144 degrees.
9. The device according to claim 1 , wherein the first insulating film includes:
a first region; and
a second region positioned between the first region and the first semiconductor layer, the second region includes nitrogen, and
the first region does not include nitrogen, or the first region includes nitrogen and a concentration of nitrogen in the first region is lower than a concentration of nitrogen in the second region.
10. The device according to claim 1 , wherein
the first insulating film includes:
a first region; and
a second region positioned between the first region and the first semiconductor layer, the second region includes at least one first element of aluminum or gallium, and
the first region does not include the first element, or the first region includes the first element and a concentration of the first element in the first region is lower than a concentration of the first element in the second region.
11. The device according to claim 1 , wherein
a region between the first insulating film and the first semiconductor layer includes at least one selected from a second element, oxygen, and nitrogen, and
the second element includes at least one selected from the group consisting of silicon, aluminum, and gallium.
12. The device according to claim 1 , further comprising a second insulating film provided between the first insulating film and the first electrode,
a material included in the second insulating film being different from a material included in the first insulating film.
13. The device according to claim 1 , further comprising:
a second electrode; and
a third electrode separated from the second electrode in a second direction crossing the first direction,
the first semiconductor layer including
a first partial region,
a second partial region, and
a third partial region,
the first partial region being positioned between the second partial region and the third partial region,
a direction from the second partial region toward the third partial region being aligned with the second direction,
the second electrode being electrically connected to the second partial region,
the third electrode being electrically connected to the third partial region,
a direction from the first partial region toward the first electrode being aligned with the first direction.
14. The device according to claim 1 , further comprising:
a second semiconductor layer;
a second electrode; and
a third electrode,
a direction from the first electrode toward the second electrode crossing the first direction,
the first semiconductor layer being positioned between the third electrode and the first electrode and between the third electrode and the second electrode,
the second electrode being electrically connected to the second semiconductor layer,
the third electrode being electrically connected to the first semiconductor layer.
15. An electrical device, comprising at least one selected from a group consisting of an electrical circuit, a power supply circuit, a power converter, or a computer, the at least one including the semiconductor device according to claim 1 .
16. The electrical device according to claim 15 , wherein the electrical circuit includes a controlled device, the controlled device being controlled by the semiconductor device.
17. The device according to claim 2 , wherein a concentration of hydrogen at the nitrogen peak position is lower than the second hydrogen concentration.
18. A semiconductor device, comprising:
a first semiconductor layer including a nitride semiconductor;
a first electrode separated from the first semiconductor layer in a first direction; and
a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode,
the first insulating film having a first thickness in the first direction,
the first insulating film including a first position, a distance between the first position and the first semiconductor layer being ½ of the first thickness,
a first fluorine concentration of fluorine at the first position being 4×10 16 atoms/cm 3 or less,
a stacked region including the first semiconductor layer and the first insulating film includes a nitrogen peak position, and
a concentration of nitrogen in the stacked region has a peak at the nitrogen peak position, the peak corresponding to a highest nitrogen concentration in the stacked region and no other position in the stacked region having the highest concentration of nitrogen.
19. The device according to claim 18 , wherein
the first insulating film includes a third position,
a third fluorine concentration of fluorine at the third position is a peak of a concentration of fluorine in a region between the first position and the first semiconductor layer,
a distance along the first direction between the third position and the nitrogen peak position is 10 nm or less, and
the first fluorine concentration is not more than 0.36 times the third fluorine concentration.
20. The device according to claim 19 , wherein the third fluorine concentration is 3.5×10 17 atoms/cm 3 or less.
21. The device according to claim 20 , wherein the third fluorine concentration is 2×10 16 atoms/cm 3 or more.