IP Library › Granted Patent US 10,246,323
Granted Patent B2
US 10,246,323 · App. 15/559,407 · Granted Apr 2, 2019

Cavity forming method for a sensor chip, manufacturing method thereof, chip and electronics apparatus

Inventors: Mengjin Cai (Weifang, CN); Qinglin Song (Weifang, CN)
Assignee: GOERTEK, INC.
B81C1/00047B81C1/00079B81C1/00158B81C1/00269B81C1/00555B81B2201/0264
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Quick Facts
Patent No.
US 10,246,323
App. No.
15/559,407
Granted
Apr 2, 2019
Kind
B2
Abstract

A method for forming a cavity of a sensor chip. The method comprises forming a first groove (a 2 ) on a substrate (a 1 ); bonding a covering layer (a 4 ) onto the substrate (a 1 ) to cover the first groove (a 2 ), thereby forming a cavity; and etching the covering layer (a 4 ) to decrease a thickness of the covering layer. The method can implement a thinner thickness of a film, thereby improving the sensitivity of a sensor.

Claims (13)

1. A method for forming a cavity in a MEMS pressure sensor chip, comprising:

forming a first groove in a substrate;

bonding a covering layer onto the substrate to cover the first groove, so as to form a cavity; and

etching the covering layer to lower the thickness of the covering layer,

wherein the step of etching the covering layer further comprises: patterning the covering layer to etch a portion of the covering layer corresponding to the cavity, with other portions of the covering layer remaining.

2. The method according to claim 1 , wherein the step of bonding a covering layer onto the substrate further comprises: bonding the covering layer onto the substrate through a fusion bonding.

3. The method according to claim 1 , wherein the step of bonding a covering layer onto the substrate further comprises: bonding the covering layer onto the substrate through a bonding layer.

4. The method according to claim 1 , wherein the step of etching the covering layer further comprises: wet-etching the covering layer.

5. The method according to claim 1 , wherein the etched covering layer has a thickness lower than 10 μm.

6. The method according to claim 1 , further comprising: grinding the covering layer to lower a thickness of the covering layer before etching the covering layer.

7. The method according to claim 1 , further comprising: forming a thermal oxide layer on an etched surface of the covering layer, and then removing the thermal oxide layer to re-lower the thickness of the covering layer.

8. A method for manufacturing a MEMS pressure sensor chip, comprising: forming a cavity in the MEMS pressure sensor chip by using the method according to claim 1 .

9. A MEMS pressure sensor chip, which is manufactured by using the method according to claim 8 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2020
From: GOERTEK, INC.
To: WEIFANG GOERTEK MICROELECTRONICS CO., LTD.
Reel/Frame 052846/0443 →
Priority Claims (1)
CN 2015 1 0210301 · Apr 28, 2015 · national
Continuity (1)
Related Publication 20180086631A1 · Mar 29, 2018