Ion trapping device with insulating layer exposure prevention and method for manufacturing same
An ion trap device is provided as well as a method of manufacturing the ion trap device including a substrate, central DC electrode, RF electrode, side electrode and an insulating layer. Disposed over the substrate, the central DC electrode includes DC connector pad and DC rail connected thereto. The RF electrode includes RF rail adjacent to the DC rail and RF pad connected to RF rail. The side electrode has RF electrode disposed between thereof and the central DC electrode. The insulating layer supports one of the central DC electrode, RF electrode and side electrode, on a top surface of the substrate. The insulating layer includes first insulating layer and second insulating layer disposed over the first insulating layer, and the second insulating layer includes an overhang protruding with respect to the first insulating layer in a width direction of the ion trap device.
1. An ion trap device, comprising:
a substrate;
at least one central DC electrode disposed over the substrate and comprising:
a DC connector pad, and
a DC rail connected to the DC connector pad;
an RF electrode disposed over the substrate and comprising:
at least one RF rail located adjacent to the DC rail, and
an RF pad connected to the at least one RF rail;
at least one side electrode disposed over the substrate with the RF electrode disposed between the central DC electrode and the side electrode; and
a plurality of insulating layers configured to support at least one of the central DC electrode, the RF electrode or the side electrode, on a top surface of the substrate,
wherein
the plurality of insulating layers includes a first insulating layer and a second insulating layer disposed over the first insulating layer,
the second insulating layer includes an insulating overhang that protrudes with respect to the first insulating layer in a width direction of the ion trap device, and
the insulating overhang comprises at least one bottom side, substantially parallel to the substrate, and a lateral sidewall, substantially perpendicular to the substrate,
wherein the lateral sidewall of the insulating overhang has a conductive film formed thereon, and
wherein the bottom side has no conductive film formed thereon.
2. The ion trap device of claim 1 , wherein
the central DC electrode comprises a first central DC electrode having a first DC rail and a second central DC electrode having a second DC rail,
the first DC rail and the second DC rail are spaced apart from each other to form a trap region therebetween, and
an entire thickness of the substrate is removed at a region corresponding to the trap region.
3. The ion trap device of claim 2 , wherein the second insulating layer that supports the electrode close to the trap region includes the insulating overhang.
4. The ion trap device of claim 2 , wherein the insulating overhang protrudes in a direction heading for the trap region.
5. The ion trap device of claim 1 , wherein the at least one side electrode includes a plurality of side electrodes disposed at predetermined intervals in a longitudinal direction of the RF electrode.
6. The ion trap device of claim 1 , wherein
the conductive file is electrically connected to an electrode conductive film.