Capacitor
A capacitor that includes a conductive porous substrate having a porous portion; a dielectric layer on the porous portion and containing an oxygen element and at least metal element; and an upper electrode on the dielectric layer. The porous portion has a path integral value of 1 μm/μm 2 to 16 μm/μm 2 , and a porosity of 20% to 90%, and a ratio Z expressed by (1) below is 0.79 or more, Z = O d / M d O r / M r ( 1 ) where O d and M d respectively represent signal intensities of the oxygen element and the metal element when the dielectric layer is analyzed by energy dispersive X-ray spectroscopy (EDS), and where O r and M r respectively represent signal intensities of the oxygen element and the metal element when a reference material having stoichiometric composition of the oxygen element and the at least one metal element constituting the dielectric layer is analyzed by the EDS.
1. A capacitor comprising:
a conductive porous substrate having a porous portion;
an upper electrode; and
a dielectric layer between the upper electrode and the porous portion and containing an oxygen element and at least one metal element; and
wherein the porous portion has a path integral value of 1 μm/μm 2 to 16 μm/μm 2 , and a porosity of 20% to 90%, and wherein a ratio Z expressed by (1) is 0.79 or more,
Z
=
O
d
/
M
d
O
r
/
M
r
(
1
)
where O d and M d respectively represent signal intensities of the oxygen element and the at least one metal element when the dielectric layer is analyzed by energy dispersive X-ray spectroscopy, and
where O r and M r respectively represent signal intensities of the oxygen element and the metal element when a reference material having stoichiometric composition of the oxygen element and the at least one metal element constituting the dielectric layer is analyzed by the energy dispersive X-ray spectroscopy.
2. The capacitor according to claim 1 , wherein, when the path integral value (μm/μm 2 ) and the porosity of the porous portion are indicated as x and y, respectively, and are plotted on a plane formed by an x-axis and a y-axis orthogonal to each other, (x, y) is within a region surrounded by points A (2.0, 49), B (12.2, 49), C (12.2, 63), D (15.0, 63), E (15.0, 88), F (4.6, 88), G (3.8, 85), and H (3.8, 63).
3. The capacitor according to claim 1 , wherein the porosity is 30% to 80%.
4. The capacitor according to claim 1 , wherein the path integral value is 2 μm/μm 2 to 15 μm/μm 2 .
5. The capacitor according to claim 1 , wherein the path integral value is 4 μm/μm 2 to 12 μm/μm 2 .
6. The capacitor according to claim 1 , wherein the at least one metal element is selected from Al, Hf, Si, Zr, Ta, Ti, Sr, Pb, La, Ba and Nb.
7. The capacitor according to claim 2 , wherein the at least one metal element is selected from Al, Hf, Si, Zr, Ta, Ti, Sr, Pb, La, Ba and Nb.
8. The capacitor according to claim 1 , wherein the at least one metal element is selected from Al, Hf, Si and Zr.
9. The capacitor according to claim 8 , wherein the reference material is at least one selected from Al 2 O 3 , HfO 2 , SiO 2 and ZrO 2 , or a mixture thereof.
10. The capacitor according to claim 2 , wherein the at least one metal element is selected from Al, Hf, Si and Zr.
11. The capacitor according to claim 10 , wherein the reference material is at least one selected from Al 2 O 3 , HfO 2 , SiO 2 and ZrO 2 , or a mixture thereof.
12. The capacitor according to claim 1 , wherein the ratio Z is 0.79 to 1.2.
13. The capacitor according to claim 1 , wherein the dielectric layer is an atomic layer deposited dielectric layer.
14. The capacitor according to claim 1 , wherein the upper electrode layer is an atomic layer deposited upper electrode layer.