Semiconductor memory device and method for manufacturing same
A semiconductor memory device according to one embodiment includes a substrate, a stacked body provided on a first-direction side of the substrate, a semiconductor member extending in the first direction, and a charge storage film provided between the stacked body and the semiconductor member. The stacked body includes first insulating films and electrode films stacked alternately along the first direction. A recess is made in a surface of the stacked body facing the semiconductor member every one of the electrode films.
1. A semiconductor memory device, comprising:
a substrate;
a stacked body provided on a first-direction side of the substrate, the stacked body including first insulating films and electrode films, each of the first insulating films and each of the electrode films being stacked alternately along the first direction;
a semiconductor member extending in the first direction; and
a charge storage film provided between the stacked body and the semiconductor member,
a recess being made in a surface of the stacked body facing the semiconductor member every one of the electrode films,
wherein one of the first insulating films includes a protrusion at the surface of the stacked body facing the semiconductor member, the protrusion protruding toward the semiconductor member, and a thickness of the protrusion in the first direction becomes thinner toward a tip of the protrusion.
2. The device according to claim 1 , wherein the charge storage film is divided every one of electrode films in the first direction.
3. The device according to claim 1 , wherein the charge storage film is formed of an insulating material.
4. The device according to claim 1 , wherein the stacked body surrounds the semiconductor member.
5. The device according to claim 1 , further comprising:
a second insulating film provided between one of the electrode films and the charge storage film; and
a third insulating film provided between the charge storage film and the semiconductor member.
6. The device according to claim 2 , wherein the charge storage film is disposed to be continuous on a back surface of the recess and on surfaces respectively facing two sides of the recess in the first direction.
7. The device according to claim 3 , wherein the insulating material includes silicon and nitrogen.
8. The device according to claim 7 , further comprising a film disposed between one of the first insulating films and the semiconductor member, the film including silicon and oxygen.
9. A semiconductor memory device, comprising:
a substrate;
a stacked body provided on a first-direction side of the substrate, the stacked body including first insulating films and electrode films, each of the first insulating films and each of the electrode films being stacked alternately along the first direction;
a semiconductor member extending in the first direction; and
a charge storage film provided between the stacked body and the semiconductor member,
a recess being made in a surface of the stacked body facing the semiconductor member every one of the electrode films,
wherein an average thickness of portions of the charge storage film disposed on end surfaces of the first insulating films is thinner than an average thickness of portions of the charge storage film disposed on end surfaces of the electrode films.
10. The device according to claim 9 , wherein the charge storage film includes:
a first film provided between the stacked body and the semiconductor member; and
a second film provided between one of the electrode films and one of the first insulating films and between the one of the electrode films and the first film.
11. A semiconductor memory device, comprising:
a stacked body including first insulating films and electrode films, each of the first insulating films and each of the electrode films being stacked alternately along a first direction;
a semiconductor member extending in the first direction and piercing the stacked body; and
a charge storage film provided between the stacked body and the semiconductor member,
a diameter of a portion of the semiconductor member surrounded with one of the electrode films being larger than a diameter of a portion of the semiconductor member surrounded with one of the first insulating films,
wherein an average thickness of portions of the charge storage film surrounded with the first insulating films is thinner than an average thickness of portions of the charge storage film surrounded with the electrode films.
12. The device according to claim 11 , wherein the charge storage film is divided by the portion surrounded with one of the first insulating films.
13. The device according to claim 11 , wherein the charge storage film includes:
a first film provided between the stacked body and the semiconductor member; and
a second film provided between one of the electrode films and one of the first insulating films and between the one of the electrode films and the first film.