Ge nano wire transistor with GaAs as the sacrificial layer

1. An apparatus comprising:

a three-dimensional semiconductor body comprising a channel region and junction regions disposed on opposite sides of the channel region, the three-dimensional semiconductor body comprising:

a plurality of nanowires comprising a germanium material disposed in respective planes separated in the junction regions by a second material, wherein a lattice constant of the second material is similar to a lattice constant of the germanium material; and

a gate stack disposed on the channel region, the gate stack comprising a gate electrode disposed on a gate dielectric.

2. The apparatus of claim 1 , wherein the second material comprises a group III and group V compound material.

3. The apparatus of claim 1 , wherein the second material comprises gallium arsenide.

4. The apparatus of claim 1 , wherein the gate stack surrounds each of the plurality of nanowires in the channel region.

5. An apparatus comprising:

a fin comprising a plurality of nanowires arranged in a stacked arrangement on a substrate, each nanowire comprising a germanium material;

a gate stack disposed on a channel region of the fin and surrounding each of the plurality of nanowires, the gate stack comprising a gate dielectric and a gate electrode; and

a source region and a drain region each defined in the fin on opposite sides of the channel region, wherein the nanowires are arranged in respective planes separated in the source region and the drain region by a sacrificial material comprising a lattice constant similar to a lattice constant of the germanium material.

6. The apparatus of claim 5 , wherein the sacrificial material comprises a group III and group V compound material.

7. The apparatus of claim 5 , wherein the sacrificial material comprises gallium arsenide.

8. A method comprising:

forming a plurality of nanowires in separate planes on a substrate, each of the plurality of nanowires comprising a germanium material and separated from an adjacent nanowire by a sacrificial material; disposing a gate stack on the plurality of nanowires in a designated channel region, the gate stack comprising a dielectric material and a gate electrode, wherein the sacrificial material comprises a lattice constant similar to a lattice constant of the germanium material of the plurality of nanowires.

9. The method of claim 8 , wherein the sacrificial material comprises a gallium arsenide.

10. The method of claim 8 , wherein forming the plurality of nanowires comprises epitaxially growing each of the plurality of nanowires on a respective layer of the sacrificial material.

11. The method of claim 10 , wherein prior to forming the plurality of nanowires, the method comprises: forming a trench in a dielectric material on a semiconductor substrate and forming the plurality of nanowires comprises forming the plurality of nanowires in the trench.

12. The method of claim 11 , wherein the after forming the plurality of nanowires, the method comprises removing the dielectric material.

13. The method of claim 12 , wherein after removing the dielectric material, the method comprises: forming a sacrificial gate on the plurality of nanowires in the designated channel region; and forming a dielectric material on the plurality of nanowires in areas designated for junction regions.

14. The method of claim 13 , further comprising removing the sacrificial gate material.

15. The method of claim 14 , further comprising removing the sacrificial material in the designated channel region.

16. The method of claim 15 , wherein forming the gate stack comprises forming the gate stack around each of the plurality of nanowires.

17. The method of claim 16 , wherein the gate electrode comprises a metal material.

18. The method of claim 8 , wherein the designated channel region is free of the sacrificial material.