Semiconductor device
View Patent ↗A semiconductor device includes a first semiconductor layer. A second semiconductor layer is disposed on the first semiconductor layer. A structure layer is disposed on the second semiconductor layer. A metal film covers a side surface of the first semiconductor layer, a side surface of the second semiconductor layer, and an upper surface of the structure layer. A flexible substrate covers the metal film.
1. A semiconductor device, comprising:
a first semiconductor layer;
a second semiconductor layer disposed on the first semiconductor layer;
a structure layer disposed on the second semiconductor layer;
a metal film covering a side surface of the first semiconductor layer, a side surface of the second semiconductor layer, and an upper surface of the structure layer; and
a flexible substrate covering the metal film,
wherein a width of the first semiconductor layer is smaller than a width of the second semiconductor layer,
wherein the width of the second semiconductor layer is smaller than a width of the structure layer.
2. The semiconductor device of claim 1 , wherein side surfaces of the first semiconductor layer, the second semiconductor layer, and the structure layer form a shape tapered in a direction from the structure layer to the first semiconductor layer.
3. The semiconductor device of claim 1 , wherein the structure layer comprises:
source/drain electrodes arranged on an upper surface of the second semiconductor layer;
a gate electrode disposed on the second semiconductor layer, the gate electrode spaced apart from the source/drain electrodes; and
a protective layer covering the source/drain electrodes and the gate electrode.