Ga
A Ga 2 O 3 -based semiconductor element includes an undoped β-Ga 2 O 3 single crystal film disposed on a surface of a β-Ga 2 O 3 substrate, a source electrode and a drain electrode disposed on a same side of the undoped β-Ga 2 O 3 single crystal film, a gate electrode disposed on the undoped β-Ga 2 O 3 single crystal film between the source electrode and the drain electrode, and a region formed in the undoped β-Ga 2 O 3 single crystal film under the source electrode and the drain electrode and including a controlled dopant concentration.
1. A Ga 2 O 3 -based semiconductor element, comprising:
an undoped β-Ga 2 O 3 single crystal film disposed on a surface of a β-Ga 2 O 3 substrate;
a source electrode and a drain electrode disposed on a same side of the undoped β-Ga 2 O 3 single crystal film;
a gate electrode disposed on the undoped β-Ga 2 O 3 single crystal film between the source electrode and the drain electrode via a gate insulating film; and
a source region and a drain region formed in the undoped β-Ga 2 O 3 single crystal film under the source electrode and the drain electrode, respectively, and including a controlled dopant concentration,
wherein the β-Ga 2 O 3 substrate comprises a semi-insulating β-Ga 2 O 3 single crystal doped with an element selected from Mg, H, Li, Na, K, Rb, Cs, Fr, Be, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, Pb, N, or P,
wherein a channel is formed in a region of the undoped β-Ga 2 O 3 single crystal film when a voltage of more than a threshold is applied to the gate electrode, and
wherein a current only flow from the source electrode to the drain electrode through the undoped β-Ga 2 O 3 single crystal film when the voltage is applied to the gate electrode.
2. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein the undoped β-Ga 2 O 3 single crystal film is disposed on a main surface of a β-Ga 2 O 3 substrate, the main surface being rotated from 50° to 90° with respect to a (100) plane.
3. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein the source region, and the drain region are n-type.
4. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein upper surfaces of the source region and the drain region are flush with an upper surface of the undoped β-Ga 2 O 3 single crystal film.
5. The Ga 2 O 3 -based semiconductor element according to claim 4 , wherein the source electrode is disposed on the upper surface of the source region.
6. The Ga 2 O 3 -based semiconductor element according to claim 5 , wherein the gate electrode is disposed on the undoped β-Ga 2 O 3 single crystal film via the gate insulating film disposed on a bottom surface of the gate electrode.
7. The Ga 2 O 3 -based semiconductor element according to claim 6 , wherein a bottom surface of the gate insulating film is disposed on the upper surfaces of the source region and the drain region.
8. The Ga 2 O 3 -based semiconductor element according to claim 7 , wherein the bottom surface of the gate insulating film is further disposed on the upper surface of the undoped β-Ga 2 O 3 single crystal film.
9. The Ga2O3-based semiconductor element according to claim 1 , wherein the undoped β-Ga2O3 single crystal film is a high-resistance β-Ga2O3 single crystal film.
10. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein the Ga 2 O 3 -based semiconductor element includes a normally-off transistor.
11. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein the region of the undoped β-Ga 2 O 3 single crystal film is disposed below the gate electrode.
12. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein the gate insulating film is spaced apart from the source electrode and the drain electrode.
13. A Ga 2 O 3 -based semiconductor element, comprising:
an undoped β-Ga 2 O 3 single crystal film that is formed on a main surface of a β-Ga 2 O 3 substrate;
a source electrode and a drain electrode disposed on a same side of the β-Ga 2 O 3 single crystal film;
a gate electrode disposed on the undoped β-Ga 2 O 3 single crystal film between the source electrode and the drain electrode via a gate insulating film; and
a source region and a drain region formed in the undoped β-Ga 2 O 3 single crystal film under the source electrode and the drain electrode, respectively,
wherein the β-Ga 2 O 3 substrate comprises a semi-insulaing β-Ga 2 O 3 single crystal doped with an element selected from Mg, H, Li, Na, K, Rb, Cs, Fr, Be, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, Pb, N, or P,
wherein a channel is formed in a region of the undoped β-Ga 2 O 3 single crystal film when a voltage of more than a threshold is applied to the gate electrode, and
wherein a current only flows from the source electrode to the drain electrode through the undoped β-Ga 2 O 3 single crystal film when the voltage is applied to the gate electrode.
14. The Ga 2 O 3 -based semiconductor element according to claim 13 , wherein upper surfaces of the source region and the drain region are flush with an upper surface of the undoped β-Ga 2 O 3 single crystal film.
15. The Ga 2 O 3 -based semiconductor element according to claim 14 , wherein the source electrode is disposed on the upper surfaces of the source region and the drain region.
16. The Ga 2 O 3 -based semiconductor element according to claim 15 , wherein the gate electrode is disposed on the undoped β-Ga 2 O 3 single crystal film via the gate insulating film disposed on a bottom surface of the gate electrode.
17. The Ga 2 O 3 -based semiconductor element according to claim 16 , wherein a bottom surface of the gate insulating film is disposed on the upper surfaces of the source region and the drain region.
18. The Ga 2 O 3 -based semiconductor element according to claim 17 , wherein the bottom surface of the gate insulating film is further disposed on the upper surface of the undoped β-Ga 2 O 3 single crystal film.
19. The Ga 2 O 3 -based semiconductor element according to claim 13 , wherein the main surface is rotated from 50° to 90° with respect to a (100) plane.