Use of sulfur and selenium compounds as precursors to nanostructured materials
The presently disclosed subject matter provides processes for preparing nanocrystals, including processes for preparing core-shell nanocrystals. The presently disclosed subject matter also provides sulfur and selenium compounds as precursors to nanostructured materials. The presently disclosed subject matter also provides nanocrystals having a particular particle size distribution.
1. A process for preparing nanocrystals, comprising:
(a) contacting a metal salt in an organic solvent solution with a precursor compound selected from the group consisting of sulfur compounds of Formulae (I)-(IV) and selenium compounds of Formulae (V) and (VI) at a temperature in a range of from about 80° C. to about 370° C. to form a suspension of monodispersed nanocrystals having median particle size and a particle size distribution characterized by a standard deviation, such that the standard deviation (σ) of the particle size distribution is less than or equal to 13% of the median particle size of the nanocrystals, and
(b) collecting the nanocrystals from suspension;
wherein
Formula (I) has the structure:
wherein R 1 , R 2 , and R 3 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl;
R 4 is independently selected from the group consisting of substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl;
Formula (II) has the structure:
wherein R 1 and R 2 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl;
Formula (III) has the structure:
wherein R 1 and R 2 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl;
Formula (IV) has the structure:
wherein R 1 , R 2 , and R 3 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl;
Formula (V) has the structure:
wherein R 1 , R 2 , R 3 , and R 4 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted cycloalkenyl, and substituted and unsubstituted aryl; and
X is selected from the group consisting of N, O, S, Se, and P; and wherein R 2 is absent when X is O, S, or Se; and wherein R 2 is not H when X is N; and
Formula (VI) has the structure:
wherein R 1 and R 2 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl; and
wherein R 3 and R 4 are independently selected from the group consisting of substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl.
2. The process of claim 1 , wherein the metal salt is selected from the group consisting of metal carboxylates, metal phosphonates, and metal halides.
3. The process of claim 2 , wherein the metal salt comprises a metal oleate.
4. The process of claim 1 , wherein the metal is selected from the group consisting of Pb, Cd, Cu, Zn, In, Ga, Hg, Fe, Mo, and Mn.
5. The process of claim 1 , wherein the precursor compound comprises a sulfur compound of Formula (I).
6. The process of claim 5 , wherein R 1 and R 2 of the sulfur compound of Formula (I) comprise entities that are independently selected from the group consisting of unsubstituted alkyl, unsubstituted alkenyl, unsubstituted cycloalkyl, and substituted or unsubstituted aryl.
7. The process of claim 1 , wherein the precursor compound comprises N-phenyl-N′-ortho-tolylthiourea.
8. The process of claim 1 , wherein the precursor compound comprises N-phenyl-N′-2-ethylhexylthiourea.
9. The process of claim 1 , wherein the precursor compound comprises N-n-hexyl-N′,N′-di-n-butylthiourea.
10. The process of claim 1 , wherein the precursor compound comprises N-phenyl-N′-n-dodecylthiourea.
11. The process of claim 1 , wherein the precursor compound comprises N,N-diallyl-N-n-butyl-selenourea.
12. The process of claim 1 , wherein the precursor compound comprises a selenium compound of Formula (V).
13. The process of claim 1 , wherein the nanocrystals have a median particle size in a range from about 2 nm to about 8 nm.
14. The process of claim 1 , wherein the nanocrystals further comprise nanocrystals having a narrow particle size distribution such that the standard deviation (σ) of the particle size distribution is less than or equal to 8% of the median particle size of the nanocrystals.
15. A process for preparing a core-shell nanocrystal, comprising contacting a core nanocrystal in an organic solvent with a mixture comprising a metal salt and a precursor compound selected from the group consisting of sulfur compounds of Formulae (I)-(IV) and selenium compounds of Formulae (V) and (VI) at a temperature in a range of from about 80° C. to about 370° C. to form a suspension of monodispersed core nanocrystals having median particle size and a particle size distribution characterized by a standard deviation, such that the standard deviation (σ) of the particle size distribution is less than or equal to 13% of the median particle size of the core nanocrystals, wherein
Formula (I) has the structure:
wherein R 1 , R 2 , and R 3 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl;
R 4 is independently selected from the group consisting of substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl;
Formula (II) has the structure:
wherein R 1 and R 2 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl;
Formula (III) has the structure:
wherein R 1 and R 2 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl;
Formula (IV) has the structure:
wherein R 1 , R 2 , and R 3 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl;
Formula (V) has the structure:
wherein R 1 , R 2 , R 3 , and R 4 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted cycloalkenyl, and substituted and unsubstituted aryl; and
X is selected from the group consisting of N, O, S, Se, and P; and wherein R 2 is absent when X is O, S, or Se; and wherein R 2 is not H when X is N; and
Formula (VI) has the structure:
wherein R 1 and R 2 are independently selected from the group consisting of H, substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl; and
wherein R 3 and R 4 are independently selected from the group consisting of substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted cycloalkenyl, or substituted or unsubstituted aryl.
16. The process of claim 15 , wherein the core nanocrystal comprises cadmium selenide (CdSe).
17. The process of claim 15 , wherein the metal salt is selected from the group consisting of metal carboxylates, metal phosphonates, and metal halides.
18. The process of claim 17 , wherein the metal salt comprises a metal oleate.
19. The process of claim 15 , wherein the metal is selected from the group consisting of Pb, Cd, Cu, Zn, In, and Ga.
20. The process of claim 19 , wherein the metal comprises Cd.
21. The process of claim 15 , wherein the precursor compound comprises a sulfur compound of Formula (I).
22. The process of claim 21 , wherein R 1 and R 2 of the sulfur compound of Formula (I) further comprise entities that are independently selected from the group consisting of unsubstituted alkyl, unsubstituted alkenyl, unsubstituted cycloalkyl, and substituted or unsubstituted aryl.
23. The process of claim 21 , wherein the precursor compound comprises N-n-hexyl-N′,N′-di-n-octylthiourea.
24. The process of claim 21 , wherein the precursor compound comprises N,N-diallyl-N-n-butyl-selenourea.
25. The process of claim 1 , wherein the nanocrystals have a median particle size of about 5 nm and the standard deviation (σ) of the particle size distribution is less than or equal to about 0.4 nm.
26. The process of claim 1 , wherein the nanocrystals have a median particle size of about 7 nm and the standard deviation (σ) of the particle size distribution is less than or equal to about 0.6 nm.
27. The process of claim 1 , wherein the precursor compound comprises a sulfur compound of Formula (II).
28. The process of claim 1 , wherein the precursor compound comprises a sulfur compound of Formula (III).
29. The process of claim 1 , wherein the precursor compound comprises a sulfur compound of Formula (IV).
30. The process of claim 1 , wherein the precursor compound comprises a selenium compound of Formula (VI).