Magnetic tunnel junctions suitable for high temperature thermal processing
Embodiments herein provide film stacks utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer, wherein the capping layer comprises one or more layers; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru.
1. A film stack utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising:
a buffer layer;
a seed layer disposed over the buffer layer;
a first pinning layer disposed over the seed layer;
a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer;
a second pinning layer disposed over the SyF coupling layer;
a structure blocking layer disposed over the second pinning layer;
a magnetic reference layer disposed over the structure blocking layer;
a tunnel barrier layer disposed over the magnetic reference layer;
a magnetic storage layer disposed over the tunnel barrier layer;
a capping layer disposed over the magnetic storage layer, wherein the capping layer comprises one or more layers; and
a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru.
2. The film stack of claim 1 , wherein the capping layer comprises one or more of an Ir containing layer, a Ru containing layer, or a combination thereof.
3. The film stack of claim 2 , wherein the capping layer further comprises:
an oxygen containing layer.
4. The film stack of claim 3 , wherein the capping layer further comprises:
a CoFeB containing layer.
5. The film stack of claim 3 , wherein the capping layer further comprises:
a Ta containing layer.
6. The film stack of claim 1 , wherein the capping layer comprises:
an Ir containing layer, a Ru containing layer, or a combination thereof as a top layer; and
an oxygen containing layer, wherein the top layer is disposed directly above the oxygen containing layer.
7. The film stack of claim 1 , wherein the capping layer comprises:
an Ir containing layer as a top layer; and
one or more of a W containing layer, an oxygen containing layer, a second Ir containing layer disposed directly above the oxygen containing layer, a CoFeB containing layer, a Ta containing layer, and a Mo containing layer.
8. The film stack of claim 1 , wherein the SyF coupling layer comprises:
an Ir containing layer.
9. The film stack of claim 1 , wherein the buffer layer comprises:
a CoFeB containing layer.
10. The film stack of claim 9 , wherein a wt % of boron in the buffer layer is between about 20 wt % and 40 wt %.
11. The film stack of claim 1 , wherein the seed layer comprises:
(a) a NiCr containing layer, or (b) one or more of a Pt containing layer, an Ir containing layer, and a Ru containing layer.
12. The film stack of claim 9 , wherein:
the seed layer comprises a NiCr containing layer; and
the buffer layer further comprises one or more of a TaN containing layer and a Ta containing layer, wherein the CoFeB containing layer of the buffer layer is disposed over one or more of the TaN containing layer of the buffer layer and the Ta containing layer of the buffer layer.
13. The film stack of claim 9 , wherein
the seed layer comprises one or more of a Pt containing layer, an Ir containing layer, and a Ru containing layer; and
the buffer layer further comprises one or more of a TaN containing layer and a Ta containing layer, wherein the CoFeB containing layer of the buffer layer is disposed under one or more of the TaN containing layer of the buffer layer and the Ta containing layer of the buffer layer.
14. A film stack utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising:
a buffer layer, wherein the buffer layer comprises a CoFeB containing layer;
a seed layer disposed over the buffer layer;
a first pinning layer disposed over the seed layer;
a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer, wherein the SyF coupling layer comprises an Ir containing layer;
a second pinning layer disposed over the SyF coupling layer;
a structure blocking layer disposed over the second pinning layer;
a magnetic reference layer disposed over the structure blocking layer;
a tunnel barrier layer disposed over the magnetic reference layer;
a magnetic storage layer disposed over the tunnel barrier layer;
a capping layer disposed over the magnetic storage layer, wherein the capping layer comprises one or more layers; and
a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru.
15. The film stack of claim 14 , wherein the capping layer comprises:
an Ir containing layer as a top layer.
16. The film stack of claim 15 , wherein the capping layer further comprises:
one or more of a W containing layer, an oxygen containing layer, a second Ir containing layer disposed directly above the oxygen containing layer, a CoFeB containing layer, a Ta containing layer, and a Mo containing layer.
17. The film stack of claim 14 , wherein
the buffer layer further comprises one or more of a TaN containing layer and a Ta containing layer; and
the seed layer comprises (a) a NiCr containing layer or (b) one or more of a Pt containing layer, an Ir containing layer, and a Ru containing layer.
18. A film stack utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising:
a buffer layer, wherein the buffer layer comprises a CoFeB containing layer, wherein a wt % of boron is greater than about 20%;
a seed layer disposed over the buffer layer;
a first pinning layer disposed over the seed layer;
a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer, wherein the SyF coupling layer comprises an Ir containing layer;
a second pinning layer disposed over the SyF coupling layer;
a structure blocking layer disposed over the second pinning layer;
a magnetic reference layer disposed over the structure blocking layer;
a tunnel barrier layer disposed over the magnetic reference layer;
a magnetic storage layer disposed over the tunnel barrier layer;
a capping layer disposed over the magnetic storage layer, wherein the capping layer comprises one or more layers, and a top layer of the capping layer is an Ir containing layer; and
a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru.
19. The film stack of claim 18 , wherein
the seed layer comprises a NiCr containing layer; and
the buffer layer further comprises one or more of a Ta containing layer and a TaN containing layer, wherein the CoFeB containing layer of the buffer layer is disposed over one or more of the Ta containing layer of the buffer layer and a TaN containing layer of the buffer layer.
20. The film stack of claim 18 , wherein
the seed layer comprises one or more of a Pt containing layer, an Ir containing layer, and a Ru containing layer; and
the buffer layer further comprises one or more of a Ta containing layer and a TaN containing layer, wherein the one or more of the Ta containing layer of the buffer layer and a TaN containing layer of the buffer layer is disposed over the CoFeB containing layer of the buffer layer.