Method of manufacturing semiconductor device
View Patent ↗An object is to provide a method for manufacturing a highly reliable semiconductor device including a transistor with stable electric characteristics. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with an electromagnetic wave such as a microwave or a high frequency; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the electromagnetic wave; and forming an oxide insulating film, which is in contact with part of the oxide semiconductor film, over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode.
1. A method of manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor layer over a substrate; and
irradiating the oxide semiconductor layer with microwaves to reduce a concentration of hydrogen in the oxide semiconductor layer.
2. The method according to claim 1 , wherein the oxide semiconductor layer comprises In, Ga, Zn and O.
3. The method according to claim 1 , wherein the concentration of hydrogen in the oxide semiconductor layer after the step of irradiating is 5×10 19 /cm 3 or less.
4. The method according to claim 1 , wherein the oxide semiconductor layer is irradiated with microwaves in an inert gas atmosphere.
5. A method of manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor layer over a substrate;
placing the substrate in a treatment chamber;
supplying a gas to the treatment chamber; and
treating the oxide semiconductor layer by supplying microwaves to the gas in the treatment chamber to reduce a concentration of hydrogen in the oxide semiconductor layer,
wherein the gas is made into plasma by the microwaves.
6. The method according to claim 5 , wherein the oxide semiconductor layer comprises In, Ga, Zn and O.
7. The method according to claim 5 , wherein the concentration of hydrogen in the oxide semiconductor layer after the step of treating is 5×10 19 /cm 3 or less.
8. The method according to claim 5 , wherein the gas is an inert gas.
9. A method of manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor layer over a substrate;
forming a source electrode layer and a drain electrode layer, wherein a portion of the oxide semiconductor layer is exposed between the source electrode layer and the drain electrode layer; and
irradiating the oxide semiconductor layer with microwaves to reduce a concentration of hydrogen in the oxide semiconductor layer after forming the source electrode layer and the drain electrode layer.
10. The method according to claim 9 , wherein the oxide semiconductor layer comprises In, Ga, Zn and O.
11. The method according to claim 9 , wherein the concentration of hydrogen in the oxide semiconductor layer after the step of irradiating is 5×10 19 /cm 3 or less.
12. The method according to claim 9 , wherein the oxide semiconductor layer is irradiated with microwaves in an inert gas atmosphere.