ReRAM read state verification based on cell turn-on characteristics

1. A method of operating a resistive memory device, comprising:

providing a resistive memory device including an array of resistive memory cells, wherein each of the resistive memory cells comprises a resistive memory material having at least two different resistive states;

performing a first mode read operation on a group of resistive memory cells within the array;

determining a bit error rate for data generated by the first mode read operation;

determining whether the determined bit error rate is below a predetermined limit; and

performing a second mode read operation on the group of resistive memory cells within the array based on a threshold voltage if the determined bit error rate is above the predetermined limit;

wherein:

the first mode read operation uses a predetermined state differentiation threshold current as a criterion for determining a resistive state of a selected resistive memory cell within the group of resistive memory cells;

the second mode read operation measures the threshold voltage that generates a threshold current as a criterion for determining the resistive state of the selected resistive memory cell within the group of resistive memory cells;

the threshold voltage of the second mode read operation is determined by measuring a voltage across the selected resistive memory cell that provides a preset level of electrical current through the selected resistive memory cell; and

the preset level of electrical current is less than 0.01 times the predetermined state differentiation threshold current.

2. The method of claim 1 , further comprising:

outputting data generated by or derived from the first mode read operation as a read output from the group of resistive memory cells if the determined bit error rate is below the predetermined limit; and

outputting data generated by the second read mode operation as the read output from the group of resistive memory cells if the determined bit error rate is above the predetermined limit.

3. The method of claim 1 , wherein the first mode read operation comprises:

measuring a read current through the selected resistive memory cell while a read voltage is applied across the selected memory cell;

identifying a resistive state of the selected memory cell as a set state if the measured read current is greater than the predetermined state differentiation threshold current; and

identifying the resistive state of the selected memory cell as a reset state if the measured read current is less than the predetermined state differentiation threshold current.

4. The method of claim 1 , further comprising:

determining a raw bit error rate of data as generated from the first mode read operation; and

running an error correction code (ECC) program on data output by the first mode read operation if the raw bit error rate is greater than the predetermined limit.

5. The method of claim 4 , further comprising:

setting the raw bit error rate as the determined bit error rate if the raw bit error rate is less than the predetermined limit; and

setting a bit error rate output from the ECC program as the determined bit error rate if the raw bit error rate is greater than the predetermined limit.

6. The method of claim 1 , wherein:

the selected resistive memory cell comprises a barrier modulated cell of a resistive random access memory (ReRAM) device; and

the barrier modulated cell comprises a metal oxide material having at least two states having different resistivity, a barrier material and an interfacial barrier oxide located between the metal oxide material and the barrier material.

7. The method of claim 6 , wherein the metal oxide material comprises sub-stoichiometric titanium oxide (TiO 2-δ ), the barrier material comprises amorphous silicon, and the interfacial barrier oxide comprises silicon oxide.

8. The method of claim 7 , further comprising programming the selected barrier modulated cell into a reset state by applying a voltage to the barrier modulated cell to provide oxygen interstitials from the interfacial barrier oxide to the TiO 2-δ and increase a resistance of the selected resistive memory cell.

9. The method of claim 7 , further comprising programming the selected barrier modulated cell into a set state by applying a voltage to the barrier modulated cell to generate oxygen interstitial and oxygen vacancy pairs in the TiO 2-δ , and to provide oxygen interstitials away from the TiO 2-δ to the interfacial barrier oxide and decrease a resistance of the selected resistive memory cell.

10. A resistive memory device, comprising:

an array of resistive memory cells, wherein each of the resistive memory cells comprises a resistive memory material having at least two different resistive states;

a sense amplifier circuitry configured to sense electrical current through each of the resistive memory cells under a given electrical bias condition; and

a read program controller configured to perform a first mode read operation employing a predetermined state differentiation threshold current as a criterion for determining a resistive state of a selected resistive memory cell, and a second mode read operation that measures a threshold voltage that generates a predetermined threshold current as a criterion for determining the resistive state of the selected resistive memory cell,

wherein the read program controller is configured to:

perform the first mode read operation on a group of resistive memory cells within the array;

determine a bit error rate for data generated by the first mode read operation;

determine whether the determined bit error rate is below a predetermined limit; and

perform the second mode read operation on the group of resistive memory cells within the array if the determined bit error rate is above the predetermined limit;

wherein the threshold voltage of the second mode read operation is measured by determining a voltage across a selected resistive memory cell that provides a preset level of electrical current through the selected resistive memory cell; and

wherein the preset level of electrical current is less than 0.01 times a state differentiation threshold current.

11. The resistive memory device of claim 10 , wherein the read program controller is configured to output data generated by the second read mode operation as a read output from the group of resistive memory cells if the determined bit error rate is above the predetermined limit.

12. The resistive memory device of claim 11 , wherein the read program controller is configured to output data generated by or derived from the first read mode operation as the read output from the group of resistive memory cells if the determined bit error rate is below the predetermined limit.

13. The resistive memory device of claim 10 , wherein the first mode read operation performs steps of:

measuring a read current through the selected resistive memory cell while a read voltage is applied across the selected memory cell;

identifying a resistive state of the selected memory cell as a set state if the measured read current is greater than the predetermined state differentiation threshold current; and

identifying the resistive state of the selected memory cell as a reset state if the measured read current is less than the predetermined state differentiation threshold current.

14. The resistive memory device of claim 10 , wherein the read program controller is configured to:

determine a raw bit error rate of data as generated from the first mode read operation;

run an error correction code (ECC) program on date output from the first mode read operation if the raw bit error rate is greater than the predetermined limit;

to set the raw bit error rate as the determined bit error rate if the raw bit error rate is less than the predetermined limit; and

to set a bit error rate output from the ECC program as the determined bit error rate if the raw bit error rate is greater than the predetermined limit.

15. The resistive memory device of claim 14 , wherein:

each of the resistive memory cells comprises a barrier modulated cell of a resistive random access memory (ReRAM) device; and

the barrier modulated cell comprises a metal oxide material having at least two states having different resistivity, a barrier material and an interfacial barrier oxide located between the metal oxide material and the barrier material.

16. A method of operating a resistive memory device, comprising:

providing a resistive memory device including an array of resistive memory cells, wherein each of the resistive memory cells comprises a resistive memory material having at least two different resistive states;

performing a first mode read operation on a group of resistive memory cells within the array;

determining a bit error rate for data generated by the first mode read operation;

determining whether the determined bit error rate is below a predetermined limit; and

performing a second mode read operation on the group of resistive memory cells within the array based on a threshold voltage if the determined bit error rate is above the predetermined limit;

wherein:

the first mode read operation uses a predetermined state differentiation threshold current as a criterion for determining a resistive state of a selected resistive memory cell within the group of resistive memory cells;

the second mode read operation measures the threshold voltage that generates a threshold current as a criterion for determining the resistive state of the selected resistive memory cell within the group of resistive memory cells;

the selected resistive memory cell comprises a barrier modulated cell of a resistive random access memory (ReRAM) device;

the barrier modulated cell comprises a metal oxide material having at least two states having different resistivity, a barrier material and an interfacial barrier oxide located between the metal oxide material and the barrier material; and

the metal oxide material comprises sub-stoichiometric titanium oxide (TiO 2-δ ), the barrier material comprises amorphous silicon, and the interfacial barrier oxide comprises silicon oxide.

17. The method of claim 16 , further comprising programming the selected barrier modulated cell into a reset state by applying a voltage to the barrier modulated cell to provide oxygen interstitials from the interfacial barrier oxide to the TiO 2-δ and increase a resistance of the selected resistive memory cell.

18. The method of claim 16 , further comprising programming the selected barrier modulated cell into a set state by applying a voltage to the barrier modulated cell to generate oxygen interstitial and oxygen vacancy pairs in the TiO 2-δ , and to provide oxygen interstitials away from the TiO 2-δ to the interfacial barrier oxide and decrease a resistance of the selected resistive memory cell.